Yanjie Lian

Person

Chengdu, CN

People

Patents Grantslast 30 patents

Information Patent Grant
LDMOS having multiple field plates and associated manufacturing method
- Patent number 12,002,848
- Issue date Jun 4, 2024
- Chengdu Monolithic Power Systems Co., Ltd.
- Yanjie Lian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral DMOS having reduced lateral size
- Patent number 11,205,722
- Issue date Dec 21, 2021
- Chengdu Monolithic Power Systems Co., Ltd.
- Yanjie Lian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral schottky diode with high breakdown voltage capability
- Patent number 11,081,597
- Issue date Aug 3, 2021
- Chengdu Monolithic Power Systems Co., Ltd.
- Yanjie Lian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
LDMOS device with sinker link
- Patent number 11,049,957
- Issue date Jun 29, 2021
- Monolithic Power Systems, Inc.
- Ji-Hyoung Yoo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar junction semiconductor device and method for manufacturing...
- Patent number 10,090,200
- Issue date Oct 2, 2018
- Chengdu Monolithic Power Systems Co., Ltd.
- Yanjie Lian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming stepped oxide on a substrate
- Patent number 9,978,846
- Issue date May 22, 2018
- Chengdu Monolithic Power Systems Co., Ltd.
- Yanjie Lian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage PMOS and the method for forming thereof
- Patent number 9,219,146
- Issue date Dec 22, 2015
- Monolithic Power Systems, Inc.
- Ji-Hyoung Yoo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High side DMOS and the method for forming thereof
- Patent number 9,159,795
- Issue date Oct 13, 2015
- Monolithic Power Systems, Inc.
- Ji-Hyoung Yoo
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
LDMOS HAVING MULTIPLE FIELD PLATES AND ASSOCIATED MANUFACTURING METHOD
- Publication number 20240282808
- Publication date Aug 22, 2024
- Chengdu Monolithic Power Systems Co., Ltd.
- Yanjie Lian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH LOW PINCH-OFF VOLTAGE AND METHODS FOR MAN...
- Publication number 20230261116
- Publication date Aug 17, 2023
- Chengdu Monolithic Power Systems Co., Ltd.
- Daping Fu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LDMOS HAVING MULTIPLE FIELD PLATES AND ASSOCIATED MANUFACTURING METHOD
- Publication number 20220254876
- Publication date Aug 11, 2022
- Chengdu Monolithic Power Systems Co., Ltd.
- Yanjie Lian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL TRANSISTOR WITH LATERAL CONDUCTIVE FIELD PLATE OVER A FIELD...
- Publication number 20210193805
- Publication date Jun 24, 2021
- Monolithic Power Systems, Inc.
- Ji-Hyoung Yoo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL DMOS HAVING REDUCED LATERAL SIZE
- Publication number 20210020779
- Publication date Jan 21, 2021
- Chengdu Monolithic Power Systems Co., Ltd.
- Yanjie Lian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL SCHOTTKY DIODE WITH HIGH BREAKDOWN VOLTAGE CAPABILITY
- Publication number 20200185542
- Publication date Jun 11, 2020
- Chengdu Monolithic Power Systems Co., Ltd.
- Yanjie Lian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING STEPPED OXIDE ON A SUBSTRATE
- Publication number 20170200793
- Publication date Jul 13, 2017
- Chengdu Monolithic Power Systems Co., Ltd.
- Yanjie Lian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR JUNCTION SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING...
- Publication number 20170186648
- Publication date Jun 29, 2017
- Chengdu Monolithic Power Systems Co., Ltd.
- Yanjie Lian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE DMOS AND THE METHOD FOR FORMING THEREOF
- Publication number 20170170312
- Publication date Jun 15, 2017
- Monolithic Power Systems, Inc.
- Ji-Hyoung Yoo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE PMOS AND THE METHOD FOR FORMING THEREOF
- Publication number 20150187931
- Publication date Jul 2, 2015
- Monolithic Power Systems, Inc.
- Ji-Hyoung Yoo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH SIDE DMOS AND THE METHOD FOR FORMING THEREOF
- Publication number 20150001619
- Publication date Jan 1, 2015
- Monolithic Power Systems, Inc.
- Ji-Hyoung Yoo
- H01 - BASIC ELECTRIC ELEMENTS

Yanjie Lian

Person

Patents Grantslast 30 patents

LDMOS having multiple field plates and associated manufacturing method

Lateral DMOS having reduced lateral size

Lateral schottky diode with high breakdown voltage capability

LDMOS device with sinker link

Bipolar junction semiconductor device and method for manufacturing...

Method for forming stepped oxide on a substrate

High voltage PMOS and the method for forming thereof

High side DMOS and the method for forming thereof

Patents Applicationslast 30 patents

LDMOS HAVING MULTIPLE FIELD PLATES AND ASSOCIATED MANUFACTURING METHOD

SEMICONDUCTOR DEVICE WITH LOW PINCH-OFF VOLTAGE AND METHODS FOR MAN...

LDMOS HAVING MULTIPLE FIELD PLATES AND ASSOCIATED MANUFACTURING METHOD

LATERAL TRANSISTOR WITH LATERAL CONDUCTIVE FIELD PLATE OVER A FIELD...

LATERAL DMOS HAVING REDUCED LATERAL SIZE

LATERAL SCHOTTKY DIODE WITH HIGH BREAKDOWN VOLTAGE CAPABILITY

METHOD FOR FORMING STEPPED OXIDE ON A SUBSTRATE

BIPOLAR JUNCTION SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING...

HIGH VOLTAGE DMOS AND THE METHOD FOR FORMING THEREOF

HIGH VOLTAGE PMOS AND THE METHOD FOR FORMING THEREOF

HIGH SIDE DMOS AND THE METHOD FOR FORMING THEREOF