Yanjie Wang

Person

San Jose, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Non-volatile memory with tuning of erase process
- Patent number 12,154,630
- Issue date Nov 26, 2024
- SANDISK TECHNOLOGIES LLC
- Yi Song
- G11 - INFORMATION STORAGE
Information Patent Grant
Foggy-fine drain-side select gate re-program for on-pitch semi-circ...
- Patent number 12,142,323
- Issue date Nov 12, 2024
- SanDisk Technologies LLC
- Xiaoyu Che
- G11 - INFORMATION STORAGE
Information Patent Grant
Pre-read cycle timing shrink by SGD bias control and page and wordl...
- Patent number 12,142,325
- Issue date Nov 12, 2024
- SanDisk Technologies LLC
- Yanjie Wang
- G11 - INFORMATION STORAGE
Information Patent Grant
NAND string read voltage adjustment
- Patent number 12,105,963
- Issue date Oct 1, 2024
- SanDisk Technologies LLC
- Yi Song
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Non-volatile memory with zone based program speed adjustment
- Patent number 12,094,546
- Issue date Sep 17, 2024
- SANDISK TECHNOLOGIES LLC
- Yi Song
- G11 - INFORMATION STORAGE
Information Patent Grant
Dynamic sense amplifier supply voltage for power and die size reduc...
- Patent number 11,978,516
- Issue date May 7, 2024
- SANDISK TECHNOLOGIES LLC
- Yanjie Wang
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile memory with narrow and shallow erase
- Patent number 11,972,805
- Issue date Apr 30, 2024
- SANDISK TECHNOLOGIES LLC
- Yi Song
- G11 - INFORMATION STORAGE
Information Patent Grant
Utilizing data pattern effect to control read clock timing and bit...
- Patent number 11,887,674
- Issue date Jan 30, 2024
- SanDisk Technologies LLC
- Yanjie Wang
- G11 - INFORMATION STORAGE
Information Patent Grant
Power saving and fast read sequence for non-volatile memory
- Patent number 11,721,397
- Issue date Aug 8, 2023
- SanDisk Technologies LLC
- Jianzhi Wu
- G11 - INFORMATION STORAGE
Information Patent Grant
Peak current and program time optimization through loop dependent v...
- Patent number 11,636,897
- Issue date Apr 25, 2023
- SanDisk Technologies LLC
- Yanjie Wang
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory programming with selectively skipped verify pulses for perfo...
- Patent number 11,605,437
- Issue date Mar 14, 2023
- SanDisk Technologies LLC
- Yanjie Wang
- G11 - INFORMATION STORAGE
Information Patent Grant
Open block source bias adjustment for an incompletely programmed bl...
- Patent number 9,564,233
- Issue date Feb 7, 2017
- SanDisk Technologies LLC
- Hoon Cho
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
TEMPERATURE DEPENDENT REFRESH READ RATE
- Publication number 20240395308
- Publication date Nov 28, 2024
- Western Digital Technologies, Inc.
- YANZHEN WANG
- G11 - INFORMATION STORAGE
Information Patent Application
HYBRID ERASE FOR DATA RETENTION THRESHOLD VOLTAGE MARGIN IMPROVEMENT
- Publication number 20240386973
- Publication date Nov 21, 2024
- Western Digital Technologies, Inc.
- Xiaoyu Che
- G11 - INFORMATION STORAGE
Information Patent Application
FULL SEQUENCE PROGRAM FOR EDGE WORD LINE QUAD-LEVEL MEMORY CELLS
- Publication number 20240363167
- Publication date Oct 31, 2024
- Western Digital Technologies, Inc.
- Sisi Yang
- G11 - INFORMATION STORAGE
Information Patent Application
PROGRAMMING ERASE STATE AS LAST PROGRAM STATE DURING A PROGRAMMING...
- Publication number 20240290390
- Publication date Aug 29, 2024
- Western Digital Technologies, Inc.
- Yanjie Wang
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
ADAPTIVE ERASE VOLTAGES FOR NON-VOLATILE MEMORY
- Publication number 20240177788
- Publication date May 30, 2024
- SANDISK TECHNOLOGIES LLC
- Yi Song
- G11 - INFORMATION STORAGE
Information Patent Application
NAND STRING READ VOLTAGE ADJUSTMENT
- Publication number 20240086074
- Publication date Mar 14, 2024
- SANDISK TECHNOLOGIES LLC
- Yi Song
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
FOGGY-FINE DRAIN-SIDE SELECT GATE RE-PROGRAM FOR ON-PITCH SEMI-CIRC...
- Publication number 20240079061
- Publication date Mar 7, 2024
- SANDISK TECHNOLOGIES LLC
- Xiaoyu Che
- G11 - INFORMATION STORAGE
Information Patent Application
DYNAMIC WORD LINE BOOSTING DURING PROGRAMMING OF A MEMORY DEVICE
- Publication number 20240079063
- Publication date Mar 7, 2024
- SANDISK TECHNOLOGIES LLC
- Han-Ping Chen
- G11 - INFORMATION STORAGE
Information Patent Application
ADAPTIVE NEGATIVE WORD LINE VOLTAGE
- Publication number 20240071527
- Publication date Feb 29, 2024
- SANDISK TECHNOLOGIES LLC
- Xiaoyu Che
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE MEMORY WITH NARROW AND SHALLOW ERASE
- Publication number 20240046996
- Publication date Feb 8, 2024
- SANDISK TECHNOLOGIES LLC
- Yi Song
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE MEMORY WITH TUNING OF ERASE PROCESS
- Publication number 20230395157
- Publication date Dec 7, 2023
- SANDISK TECHNOLOGIES LLC
- Yi Song
- G11 - INFORMATION STORAGE
Information Patent Application
PRE-READ CYCLE TIMING SHRINK BY SGD BIAS CONTROL AND PAGE AND WORDL...
- Publication number 20230368844
- Publication date Nov 16, 2023
- SANDISK TECHNOLOGIES LLC
- Yanjie Wang
- G11 - INFORMATION STORAGE
Information Patent Application
DYNAMIC SENSE AMPLIFIER SUPPLY VOLTAGE FOR POWER AND DIE SIZE REDUC...
- Publication number 20230326531
- Publication date Oct 12, 2023
- SANDISK TECHNOLOGIES LLC
- Yanjie Wang
- G11 - INFORMATION STORAGE
Information Patent Application
PROGRAMMING TECHNIQUES TO REDUCE PROGRAMMING STRESS IN A MEMORY DEVICE
- Publication number 20230317170
- Publication date Oct 5, 2023
- SANDISK TECHNOLOGIES LLC
- Xiaoyu Che
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
UTILIZING DATA PATTERN EFFECT TO CONTROL READ CLOCK TIMING AND BIT...
- Publication number 20230317174
- Publication date Oct 5, 2023
- SANDISK TECHNOLOGIES LLC
- Yanjie Wang
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE MEMORY WITH ZONE BASED PROGRAM SPEED ADJUSTMENT
- Publication number 20230245706
- Publication date Aug 3, 2023
- SANDISK TECHNOLOGIES LLC
- Yi Song
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY PROGRAMMING WITH SELECTIVELY SKIPPED VERIFY PULSES FOR PERFO...
- Publication number 20220415417
- Publication date Dec 29, 2022
- SANDISK TECHNOLOGIES LLC
- Yanjie Wang
- G11 - INFORMATION STORAGE
Information Patent Application
PEAK CURRENT AND PROGRAM TIME OPTIMIZATION THROUGH LOOP DEPENDENT V...
- Publication number 20220284964
- Publication date Sep 8, 2022
- SANDISK TECHNOLOGIES LLC
- Yanjie Wang
- G11 - INFORMATION STORAGE
Information Patent Application
POWER SAVING AND FAST READ SEQUENCE FOR NON-VOLATILE MEMORY
- Publication number 20220208276
- Publication date Jun 30, 2022
- SANDISK TECHNOLOGIES LLC
- Jianzhi Wu
- G11 - INFORMATION STORAGE

Yanjie Wang

Person

Patents Grantslast 30 patents

Non-volatile memory with tuning of erase process

Foggy-fine drain-side select gate re-program for on-pitch semi-circ...

Pre-read cycle timing shrink by SGD bias control and page and wordl...

NAND string read voltage adjustment

Non-volatile memory with zone based program speed adjustment

Dynamic sense amplifier supply voltage for power and die size reduc...

Non-volatile memory with narrow and shallow erase

Utilizing data pattern effect to control read clock timing and bit...

Power saving and fast read sequence for non-volatile memory

Peak current and program time optimization through loop dependent v...

Memory programming with selectively skipped verify pulses for perfo...

Open block source bias adjustment for an incompletely programmed bl...

Patents Applicationslast 30 patents

TEMPERATURE DEPENDENT REFRESH READ RATE

HYBRID ERASE FOR DATA RETENTION THRESHOLD VOLTAGE MARGIN IMPROVEMENT

FULL SEQUENCE PROGRAM FOR EDGE WORD LINE QUAD-LEVEL MEMORY CELLS

PROGRAMMING ERASE STATE AS LAST PROGRAM STATE DURING A PROGRAMMING...

ADAPTIVE ERASE VOLTAGES FOR NON-VOLATILE MEMORY

NAND STRING READ VOLTAGE ADJUSTMENT

FOGGY-FINE DRAIN-SIDE SELECT GATE RE-PROGRAM FOR ON-PITCH SEMI-CIRC...

DYNAMIC WORD LINE BOOSTING DURING PROGRAMMING OF A MEMORY DEVICE

ADAPTIVE NEGATIVE WORD LINE VOLTAGE

NON-VOLATILE MEMORY WITH NARROW AND SHALLOW ERASE

NON-VOLATILE MEMORY WITH TUNING OF ERASE PROCESS

PRE-READ CYCLE TIMING SHRINK BY SGD BIAS CONTROL AND PAGE AND WORDL...

DYNAMIC SENSE AMPLIFIER SUPPLY VOLTAGE FOR POWER AND DIE SIZE REDUC...

PROGRAMMING TECHNIQUES TO REDUCE PROGRAMMING STRESS IN A MEMORY DEVICE

UTILIZING DATA PATTERN EFFECT TO CONTROL READ CLOCK TIMING AND BIT...

NON-VOLATILE MEMORY WITH ZONE BASED PROGRAM SPEED ADJUSTMENT

MEMORY PROGRAMMING WITH SELECTIVELY SKIPPED VERIFY PULSES FOR PERFO...

PEAK CURRENT AND PROGRAM TIME OPTIMIZATION THROUGH LOOP DEPENDENT V...

POWER SAVING AND FAST READ SEQUENCE FOR NON-VOLATILE MEMORY