Yanli Zhang

Person

San Jose, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Memory device including mixed oxide charge trapping materials and m...
- Patent number 12,150,302
- Issue date Nov 19, 2024
- SanDisk Technologies LLC
- Ramy Nashed Bassely Said
Information Patent Grant
Preventing erase disturb in NAND
- Patent number 12,087,371
- Issue date Sep 10, 2024
- SanDisk Technologies LLC
- Yanli Zhang
- G11 - INFORMATION STORAGE
Information Patent Grant
Three dimensional memory device containing dummy word lines and p-n...
- Patent number 12,035,520
- Issue date Jul 9, 2024
- SanDisk Technologies LLC
- Yanli Zhang
Information Patent Grant
Virtual metrology for feature profile prediction in the production...
- Patent number 12,009,269
- Issue date Jun 11, 2024
- SANDISK TECHNOLOGIES LLC
- Cheng-Chung Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device using a multilayer ferroelectric stack and method of...
- Patent number 11,968,839
- Issue date Apr 23, 2024
- SanDisk Technologies LLC
- Yanli Zhang
Information Patent Grant
Three-dimensional memory device containing on-pitch drain select le...
- Patent number 11,968,825
- Issue date Apr 23, 2024
- SanDisk Technologies LLC
- Zhen Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Three-dimensional memory device including low-k drain-select-level...
- Patent number 11,871,580
- Issue date Jan 9, 2024
- SanDisk Technologies LLC
- Peng Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device with wiggled drain-select-level iso...
- Patent number 11,805,649
- Issue date Oct 31, 2023
- SanDisk Technologies LLC
- Srinivas Pulugurtha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory array including dual work function floatin...
- Patent number 11,631,686
- Issue date Apr 18, 2023
- SanDisk Technologies LLC
- Ramy Nashed Bassely Said
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device including a composite semiconductor...
- Patent number 11,600,634
- Issue date Mar 7, 2023
- SanDisk Technologies LLC
- Zhixin Cui
- G11 - INFORMATION STORAGE
Information Patent Grant
Three-dimensional memory device including a composite semiconductor...
- Patent number 11,552,100
- Issue date Jan 10, 2023
- SanDisk Technologies LLC
- Zhixin Cui
- G11 - INFORMATION STORAGE
Information Patent Grant
Three-dimensional memory device containing bridges for enhanced str...
- Patent number 11,532,570
- Issue date Dec 20, 2022
- SanDisk Technologies LLC
- Genta Mizuno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device using a multilayer ferroelectric stack and method of...
- Patent number 11,469,251
- Issue date Oct 11, 2022
- SanDisk Technologies LLC
- Yanli Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
On-pitch drain select level isolation structure for three-dimension...
- Patent number RE49165
- Issue date Aug 9, 2022
- SanDisk Technologies LLC
- Yanli Zhang
Information Patent Grant
Periodic reduced word line bias which increases channel boosting
- Patent number 11,309,031
- Issue date Apr 19, 2022
- Western Digital Technologies, Inc.
- Ming Wang
- G11 - INFORMATION STORAGE
Information Patent Grant
Three-dimensional memory device including a composite semiconductor...
- Patent number 11,302,714
- Issue date Apr 12, 2022
- SanDisk Technologies LLC
- Zhixin Cui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device including ferroelectric-metal-insul...
- Patent number 11,302,716
- Issue date Apr 12, 2022
- SanDisk Technologies LLC
- Raghuveer S. Makala
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device including ferroelectric-metal-insul...
- Patent number 11,282,848
- Issue date Mar 22, 2022
- SanDisk Technologies LLC
- Raghuveer S. Makala
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional NOR array including active region pillars and met...
- Patent number 11,251,199
- Issue date Feb 15, 2022
- SanDisk Technologies LLC
- Yanli Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device with logic signal routing through a...
- Patent number 11,222,881
- Issue date Jan 11, 2022
- SanDisk Technologies LLC
- Yanli Zhang
- G11 - INFORMATION STORAGE
Information Patent Grant
Hole pre-charge scheme using gate induced drain leakage generation
- Patent number 11,211,392
- Issue date Dec 28, 2021
- SanDisk Technologies LLC
- Sarath Puthenthermadam
- G11 - INFORMATION STORAGE
Information Patent Grant
Three-dimensional memory device including wrap around word lines an...
- Patent number 11,177,280
- Issue date Nov 16, 2021
- SanDisk Technologies LLC
- Adarsh Rajashekhar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cross-point array of ferroelectric field effect transistors and met...
- Patent number 11,164,890
- Issue date Nov 2, 2021
- SanDisk Technologies LLC
- Yanli Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional nor array including vertical word lines and discr...
- Patent number 11,114,534
- Issue date Sep 7, 2021
- SanDisk Technologies LLC
- Adarsh Rajashekhar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device containing plural work function wor...
- Patent number 11,101,288
- Issue date Aug 24, 2021
- SanDisk Technologies LLC
- Yanli Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a three-dimensional memory device and a driver ci...
- Patent number 11,094,704
- Issue date Aug 17, 2021
- SanDisk Technologies LLC
- Yanli Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional ferroelectric memory array including integrated g...
- Patent number 11,088,170
- Issue date Aug 10, 2021
- SanDisk Technologies LLC
- Yanli Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device containing plural work function wor...
- Patent number 11,063,063
- Issue date Jul 13, 2021
- SanDisk Technologies LLC
- Yanli Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional flat NAND memory device having curved memory elem...
- Patent number 11,024,635
- Issue date Jun 1, 2021
- SanDisk Technologies LLC
- Zhixin Cui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric memory devices including a stack of ferroelectric and...
- Patent number 11,024,648
- Issue date Jun 1, 2021
- SanDisk Technologies LLC
- Rahul Sharangpani
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
CHANNEL PRE-CHARGE PROCESS IN A MEMORY DEVICE
- Publication number 20240203511
- Publication date Jun 20, 2024
- SANDISK TECHNOLOGIES LLC
- Jiacen Guo
- G11 - INFORMATION STORAGE
Information Patent Application
THREE-DIMENSIONAL NOR ARRAY AND METHOD OF MAKING THE SAME
- Publication number 20240206171
- Publication date Jun 20, 2024
- SANDISK TECHNOLOGIES LLC
- Masaaki HIGASHITANI
- G11 - INFORMATION STORAGE
Information Patent Application
THREE-DIMENSIONAL NOR ARRAY AND METHOD OF MAKING THE SAME
- Publication number 20240206170
- Publication date Jun 20, 2024
- SANDISK TECHNOLOGIES LLC
- Satoshi SHIMIZU
- G11 - INFORMATION STORAGE
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE CONTAINING MULTI-LEVEL SUPPORT BRID...
- Publication number 20240155841
- Publication date May 9, 2024
- SANDISK TECHNOLOGIES LLC
- Seyyed Ehsan Esfahani RASHIDI
Information Patent Application
NON-VOLATILE MEMORY WITH DUMMY WORD LINE ASSISTED PRE-CHARGE
- Publication number 20240145006
- Publication date May 2, 2024
- SANDISK TECHNOLOGIES LLC
- Peng Zhang
- G11 - INFORMATION STORAGE
Information Patent Application
GATE-INDUCED DRAIN LEAKAGE PRE-CHARGE IN SUB-BLOCK MODE FOR THREE O...
- Publication number 20240112743
- Publication date Apr 4, 2024
- SANDISK TECHNOLOGIES LLC
- Peng Zhang
- G11 - INFORMATION STORAGE
Information Patent Application
CONFIGURABLE CAPACITORS WITH 3D NON-VOLATILE ARRAY
- Publication number 20240114685
- Publication date Apr 4, 2024
- Western Digital Technologies, Inc.
- Liang Li
- G11 - INFORMATION STORAGE
Information Patent Application
PREVENTING ERASE DISTURB IN NAND
- Publication number 20240105271
- Publication date Mar 28, 2024
- SANDISK TECHNOLOGIES LLC
- Yanli Zhang
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE INCLUDING MIXED OXIDE CHARGE TRAPPING MATERIALS AND M...
- Publication number 20230269939
- Publication date Aug 24, 2023
- SANDISK TECHNOLOGIES LLC
- Ramy Nashed Bassely SAID
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE DIMENSIONAL MEMORY DEVICE CONTAINING DUMMY WORD LINES AND P-N...
- Publication number 20230099107
- Publication date Mar 30, 2023
- SANDISK TECHNOLOGIES LLC
- Yanli ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTORS WITH GATE FINS AND METHOD OF MAKING THE SAME
- Publication number 20230082824
- Publication date Mar 16, 2023
- SANDISK TECHNOLOGIES LLC
- Srinivas PULUGURTHA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE CONTAINING ON-PITCH DRAIN SELECT LE...
- Publication number 20230013725
- Publication date Jan 19, 2023
- SANDISK TECHNOLOGIES LLC
- Kanta WATANABE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE USING A MULTILAYER FERROELECTRIC STACK AND METHOD OF...
- Publication number 20220415924
- Publication date Dec 29, 2022
- SANDISK TECHNOLOGIES LLC
- Yanli ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VIRTUAL METROLOGY FOR FEATURE PROFILE PREDICTION IN THE PRODUCTION...
- Publication number 20220415718
- Publication date Dec 29, 2022
- SANDISK TECHNOLOGIES LLC
- Cheng-Chung Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPUTE IN MEMORY THREE-DIMENSIONAL NON-VOLATILE NOR MEMORY FOR NEU...
- Publication number 20220398438
- Publication date Dec 15, 2022
- SANDISK TECHNOLOGIES LLC
- Yanli Zhang
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
COMPUTE IN MEMORY THREE-DIMENSIONAL NON-VOLATILE NAND MEMORY FOR NE...
- Publication number 20220398439
- Publication date Dec 15, 2022
- SANDISK TECHNOLOGIES LLC
- Yanli Zhang
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE INCLUDING LOW-K DRAIN-SELECT-LEVEL...
- Publication number 20220367487
- Publication date Nov 17, 2022
- SANDISK TECHNOLOGIES LLC
- Peng ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY ARRAY INCLUDING DUAL WORK FUNCTION FLOATIN...
- Publication number 20220254798
- Publication date Aug 11, 2022
- SANDISK TECHNOLOGIES LLC
- Ramy Nashed Bassely SAID
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE CONTAINING BRIDGES FOR ENHANCED STR...
- Publication number 20220254733
- Publication date Aug 11, 2022
- SANDISK TECHNOLOGIES LLC
- Genta MIZUNO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PERIODIC REDUCED WORD LINE BIAS WHICH INCREASES CHANNEL BOOSTING
- Publication number 20220068390
- Publication date Mar 3, 2022
- Western Digital Technologies, Inc.
- Ming Wang
- G11 - INFORMATION STORAGE
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE INCLUDING A COMPOSITE SEMICONDUCTOR...
- Publication number 20220045090
- Publication date Feb 10, 2022
- SANDISK TECHNOLOGIES LLC
- Zhixin Cui
- G11 - INFORMATION STORAGE
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE INCLUDING A COMPOSITE SEMICONDUCTOR...
- Publication number 20220045091
- Publication date Feb 10, 2022
- SANDISK TECHNOLOGIES LLC
- Zhixin CUI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE INCLUDING A COMPOSITE SEMICONDUCTOR...
- Publication number 20220045092
- Publication date Feb 10, 2022
- SANDISK TECHNOLOGIES LLC
- Zhixin Cui
- G11 - INFORMATION STORAGE
Information Patent Application
HOLE PRE-CHARGE SCHEME USING GATE INDUCED DRAIN LEAKAGE GENERATION
- Publication number 20210408024
- Publication date Dec 30, 2021
- SANDISK TECHNOLOGIES LLC
- Sarath Puthenthermadam
- G11 - INFORMATION STORAGE
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE INCLUDING WRAP AROUND WORD LINES AN...
- Publication number 20210358942
- Publication date Nov 18, 2021
- SANDISK TECHNOLOGIES LLC
- Adarsh RAJASHEKHAR
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE WITH WIGGLED DRAIN-SELECT-LEVEL ISO...
- Publication number 20210358946
- Publication date Nov 18, 2021
- SANDISK TECHNOLOGIES LLC
- Srinivas PULUGURTHA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE INCLUDING FERROELECTRIC-METAL-INSUL...
- Publication number 20210358952
- Publication date Nov 18, 2021
- SANDISK TECHNOLOGIES LLC
- Raghuveer S. MAKALA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE INCLUDING FERROELECTRIC-METAL-INSUL...
- Publication number 20210358931
- Publication date Nov 18, 2021
- SANDISK TECHNOLOGIES LLC
- Raghuveer S. MAKALA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CROSS-POINT ARRAY OF FERROELECTRIC FIELD EFFECT TRANSISTORS AND MET...
- Publication number 20210217775
- Publication date Jul 15, 2021
- SANDISK TECHNOLOGIES LLC
- Yanli ZHANG
- G11 - INFORMATION STORAGE
Information Patent Application
THREE-DIMENSIONAL NOR ARRAY INCLUDING VERTICAL WORD LINES AND DISCR...
- Publication number 20210202703
- Publication date Jul 1, 2021
- SANDISK TECHNOLOGIES LLC
- Adarsh RAJASHEKHAR
- H01 - BASIC ELECTRIC ELEMENTS

Yanli Zhang

Person

Patents Grantslast 30 patents

Memory device including mixed oxide charge trapping materials and m...

Preventing erase disturb in NAND

Three dimensional memory device containing dummy word lines and p-n...

Virtual metrology for feature profile prediction in the production...

Memory device using a multilayer ferroelectric stack and method of...

Three-dimensional memory device containing on-pitch drain select le...

Three-dimensional memory device including low-k drain-select-level...

Three-dimensional memory device with wiggled drain-select-level iso...

Three-dimensional memory array including dual work function floatin...

Three-dimensional memory device including a composite semiconductor...

Three-dimensional memory device including a composite semiconductor...

Three-dimensional memory device containing bridges for enhanced str...

Memory device using a multilayer ferroelectric stack and method of...

On-pitch drain select level isolation structure for three-dimension...

Periodic reduced word line bias which increases channel boosting

Three-dimensional memory device including a composite semiconductor...

Three-dimensional memory device including ferroelectric-metal-insul...

Three-dimensional memory device including ferroelectric-metal-insul...

Three-dimensional NOR array including active region pillars and met...

Three-dimensional memory device with logic signal routing through a...

Hole pre-charge scheme using gate induced drain leakage generation

Three-dimensional memory device including wrap around word lines an...

Cross-point array of ferroelectric field effect transistors and met...

Three-dimensional nor array including vertical word lines and discr...

Three-dimensional memory device containing plural work function wor...

Method of forming a three-dimensional memory device and a driver ci...

Three-dimensional ferroelectric memory array including integrated g...

Three-dimensional memory device containing plural work function wor...

Three-dimensional flat NAND memory device having curved memory elem...

Ferroelectric memory devices including a stack of ferroelectric and...

Patents Applicationslast 30 patents

CHANNEL PRE-CHARGE PROCESS IN A MEMORY DEVICE

THREE-DIMENSIONAL NOR ARRAY AND METHOD OF MAKING THE SAME

THREE-DIMENSIONAL NOR ARRAY AND METHOD OF MAKING THE SAME

THREE-DIMENSIONAL MEMORY DEVICE CONTAINING MULTI-LEVEL SUPPORT BRID...

NON-VOLATILE MEMORY WITH DUMMY WORD LINE ASSISTED PRE-CHARGE

GATE-INDUCED DRAIN LEAKAGE PRE-CHARGE IN SUB-BLOCK MODE FOR THREE O...

CONFIGURABLE CAPACITORS WITH 3D NON-VOLATILE ARRAY

PREVENTING ERASE DISTURB IN NAND

MEMORY DEVICE INCLUDING MIXED OXIDE CHARGE TRAPPING MATERIALS AND M...

THREE DIMENSIONAL MEMORY DEVICE CONTAINING DUMMY WORD LINES AND P-N...

FIELD EFFECT TRANSISTORS WITH GATE FINS AND METHOD OF MAKING THE SAME

THREE-DIMENSIONAL MEMORY DEVICE CONTAINING ON-PITCH DRAIN SELECT LE...

MEMORY DEVICE USING A MULTILAYER FERROELECTRIC STACK AND METHOD OF...

VIRTUAL METROLOGY FOR FEATURE PROFILE PREDICTION IN THE PRODUCTION...

COMPUTE IN MEMORY THREE-DIMENSIONAL NON-VOLATILE NOR MEMORY FOR NEU...

COMPUTE IN MEMORY THREE-DIMENSIONAL NON-VOLATILE NAND MEMORY FOR NE...

THREE-DIMENSIONAL MEMORY DEVICE INCLUDING LOW-K DRAIN-SELECT-LEVEL...

THREE-DIMENSIONAL MEMORY ARRAY INCLUDING DUAL WORK FUNCTION FLOATIN...

THREE-DIMENSIONAL MEMORY DEVICE CONTAINING BRIDGES FOR ENHANCED STR...

PERIODIC REDUCED WORD LINE BIAS WHICH INCREASES CHANNEL BOOSTING

THREE-DIMENSIONAL MEMORY DEVICE INCLUDING A COMPOSITE SEMICONDUCTOR...

THREE-DIMENSIONAL MEMORY DEVICE INCLUDING A COMPOSITE SEMICONDUCTOR...

THREE-DIMENSIONAL MEMORY DEVICE INCLUDING A COMPOSITE SEMICONDUCTOR...

HOLE PRE-CHARGE SCHEME USING GATE INDUCED DRAIN LEAKAGE GENERATION

THREE-DIMENSIONAL MEMORY DEVICE INCLUDING WRAP AROUND WORD LINES AN...

THREE-DIMENSIONAL MEMORY DEVICE WITH WIGGLED DRAIN-SELECT-LEVEL ISO...

THREE-DIMENSIONAL MEMORY DEVICE INCLUDING FERROELECTRIC-METAL-INSUL...

THREE-DIMENSIONAL MEMORY DEVICE INCLUDING FERROELECTRIC-METAL-INSUL...

CROSS-POINT ARRAY OF FERROELECTRIC FIELD EFFECT TRANSISTORS AND MET...

THREE-DIMENSIONAL NOR ARRAY INCLUDING VERTICAL WORD LINES AND DISCR...