Yanxiang Liu

Person

San Diego, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Contact for semiconductor device
- Patent number 10,833,017
- Issue date Nov 10, 2020
- QUALCOMM Incorporated
- Yanxiang Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Layout effect mitigation in FinFET
- Patent number 10,181,403
- Issue date Jan 15, 2019
- QUALCOMM Incorporated
- Da Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having local buried oxide
- Patent number 10,170,315
- Issue date Jan 1, 2019
- GLOBALFOUNDRIES Inc.
- Yanxiang Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Systems, methods, and apparatus for improved finFETs
- Patent number 10,141,306
- Issue date Nov 27, 2018
- QUALCOMM Incorporated
- Yanxiang Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field effect transistor (FET) (FinFET) complementary metal oxid...
- Patent number 10,134,734
- Issue date Nov 20, 2018
- QUALCOMM Incorporated
- Jun Yuan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field effect transistor (FET) (FinFET) complementary metal oxid...
- Patent number 10,090,305
- Issue date Oct 2, 2018
- QUALCOMM Incorporated
- Jun Yuan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and apparatus for selectively forming nitride caps on metal...
- Patent number 10,062,763
- Issue date Aug 28, 2018
- QUALCOMM Incorporated
- Junjing Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor temperature sensing
- Patent number 10,018,515
- Issue date Jul 10, 2018
- QUALCOMM Incorporated
- Yanxiang Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Modified tunneling field effect transistors and fabrication methods
- Patent number 10,003,302
- Issue date Jun 19, 2018
- GLOBALFOUNDRIES Inc.
- Yanxiang Liu
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Method for mitigating layout effect in FINFET
- Patent number 9,997,360
- Issue date Jun 12, 2018
- QUALCOMM Incorporated
- Da Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
System, apparatus, and method for N/P tuning in a fin-FET
- Patent number 9,978,738
- Issue date May 22, 2018
- QUALCOMM Incorporated
- Yanxiang Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device and method to connect gate regions separated using a gate cut
- Patent number 9,853,112
- Issue date Dec 26, 2017
- QUALCOMM Incorporated
- Yanxiang Liu
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Modified tunneling field effect transistors and fabrication methods
- Patent number 9,673,757
- Issue date Jun 6, 2017
- GLOBALFOUNDRIES Inc.
- Yanxiang Liu
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Non-planar semiconductor structure with preserved isolation region
- Patent number 9,666,709
- Issue date May 30, 2017
- GLOBALFOUNDRIES Inc.
- Xiaoli He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method for tunable memory cells including fin field e...
- Patent number 9,653,281
- Issue date May 16, 2017
- QUALCOMM Incorporated
- Haining Yang
- G05 - CONTROLLING REGULATING
Information Patent Grant
FinFET device and method of making the same
- Patent number 9,653,466
- Issue date May 16, 2017
- QUALCOMM Incorporated
- Haining Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Embedded DRAM in replacement metal gate technology
- Patent number 9,640,538
- Issue date May 2, 2017
- GLOBALFOUNDRIES Inc.
- Yanxiang Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Off-center gate cut
- Patent number 9,607,988
- Issue date Mar 28, 2017
- QUALCOMM Incorporated
- Yanxiang Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-planar vertical dual source drift metal-oxide semiconductor (VD...
- Patent number 9,601,578
- Issue date Mar 21, 2017
- GLOBALFOUNDRIES Inc.
- Jerome Ciavatti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET conformal junction and high epi surface dopant concentration...
- Patent number 9,577,040
- Issue date Feb 21, 2017
- GLOBALFOUNDRIES Inc.
- Peijie Feng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Applying channel stress to Fin field-effect transistors (FETs) (Fin...
- Patent number 9,570,442
- Issue date Feb 14, 2017
- QUALCOMM Incorporated
- Yanxiang Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET conformal junction and abrupt junction with reduced damage m...
- Patent number 9,559,176
- Issue date Jan 31, 2017
- GLOBALFOUNDRIES Inc.
- Peijie Feng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET with cut gate stressor
- Patent number 9,537,007
- Issue date Jan 3, 2017
- QUALCOMM Incorporated
- Haining Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuits having FinFET semiconductor devices and methods...
- Patent number 9,472,554
- Issue date Oct 18, 2016
- GLOBALFOUNDRIES, INC.
- Michael Hargrove
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxially forming a set of fins in a semiconductor device
- Patent number 9,437,740
- Issue date Sep 6, 2016
- GLOBALFOUNDRIES Inc.
- Johannes M. van Meer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuits and methods for fabricating integrated circuits...
- Patent number 9,419,126
- Issue date Aug 16, 2016
- GLOBALFOUNDRIES, INC.
- Xiaodong Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET conformal junction and high EPI surface dopant concentration...
- Patent number 9,406,752
- Issue date Aug 2, 2016
- GLOBALFOUNDRIES Inc.
- Peijie Feng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of making a self-aligned channel drift device
- Patent number 9,397,191
- Issue date Jul 19, 2016
- GLOBALFOUNDRIES Inc.
- Jerome Ciavatti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET conformal junction and abrupt junction with reduced damage m...
- Patent number 9,397,162
- Issue date Jul 19, 2016
- Globalfoundries Inc.
- Peijie Feng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon-on-insulator finFET with bulk source and drain
- Patent number 9,385,126
- Issue date Jul 5, 2016
- GLOBALFOUNDRIES Inc.
- Yanxiang Liu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SYSTEMS, METHODS, AND APPARATUS FOR IMPROVED FINFETS
- Publication number 20180219009
- Publication date Aug 2, 2018
- QUALCOMM Incorporated
- Yanxiang LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LAYOUT EFFECT MITIGATION IN FINFET
- Publication number 20180197743
- Publication date Jul 12, 2018
- QUALCOMM Incorporated
- Da YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LAYOUT EFFECT MITIGATION IN FINFET
- Publication number 20180082846
- Publication date Mar 22, 2018
- QUALCOMM Incorporated
- Da YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT FOR SEMICONDUCTOR DEVICE
- Publication number 20180076139
- Publication date Mar 15, 2018
- QUALCOMM Incorporated
- Yanxiang LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN FIELD EFFECT TRANSISTOR (FET) (FINFET) COMPLEMENTARY METAL OXID...
- Publication number 20180006035
- Publication date Jan 4, 2018
- QUALCOMM Incorporated
- Jun Yuan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMING A SELF-ALIGNED SINGLE DIFFUSION BREAK (SDB) ISOLATION STRUC...
- Publication number 20170309611
- Publication date Oct 26, 2017
- QUALCOMM Incorporated
- Yanxiang Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SYSTEM, APPARATUS, AND METHOD FOR N/P TUNING IN A FIN-FET
- Publication number 20170236815
- Publication date Aug 17, 2017
- QUALCOMM Incorporated
- Yanxiang LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MODIFIED TUNNELING FIELD EFFECT TRANSISTORS AND FABRICATION METHODS
- Publication number 20170230004
- Publication date Aug 10, 2017
- GLOBALFOUNDRIES INC.
- Yanxiang LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR TEMPERATURE SENSING
- Publication number 20170074728
- Publication date Mar 16, 2017
- QUALCOMM Incorporated
- Yanxiang Liu
- G01 - MEASURING TESTING
Information Patent Application
FINFET DEVICE AND METHOD OF MAKING THE SAME
- Publication number 20170040324
- Publication date Feb 9, 2017
- QUALCOMM Incorporated
- Haining YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE AND METHOD TO CONNECT GATE REGIONS SEPARATED USING A GATE CUT
- Publication number 20170018620
- Publication date Jan 19, 2017
- QUALCOMM Incorporated
- Yanxiang Liu
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
STRUCTURE AND METHOD FOR TUNABLE MEMORY CELLS INCLUDING FIN FIELD E...
- Publication number 20160372316
- Publication date Dec 22, 2016
- QUALCOMM Incorporated
- Haining Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND APPARATUS FOR SELECTIVELY FORMING NITRIDE CAPS ON METAL...
- Publication number 20160351677
- Publication date Dec 1, 2016
- QUALCOMM Incorporated
- Junjing BAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET CONFORMAL JUNCTION AND HIGH EPI SURFACE DOPANT CONCENTRATION...
- Publication number 20160308005
- Publication date Oct 20, 2016
- GLOBALFOUNDRIES INC.
- Peijie FENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET WITH CUT GATE STRESSOR
- Publication number 20160300948
- Publication date Oct 13, 2016
- QUALCOMM Incorporated
- Haining YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET CONFORMAL JUNCTION AND ABRUPT JUNCTION WITH REDUCED DAMAGE M...
- Publication number 20160293718
- Publication date Oct 6, 2016
- GLOBALFOUNDRIES INC.
- Peijie FENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMING TUNNELING FIELD-EFFECT TRANSISTOR WITH STACKING FAULT AND R...
- Publication number 20160284846
- Publication date Sep 29, 2016
- GLOBALFOUNDRIES INC.
- Yanxiang LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SYSTEM, APPARATUS, AND METHOD FOR N/P TUNING IN A FIN-FET
- Publication number 20160284836
- Publication date Sep 29, 2016
- QUALCOMM Incorporated
- Yanxiang LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
OFF-CENTER GATE CUT
- Publication number 20160225767
- Publication date Aug 4, 2016
- QUALCOMM Incorporated
- Yanxiang Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-PLANAR SEMICONDUCTOR STRUCTURE WITH PRESERVED ISOLATION REGION
- Publication number 20160225895
- Publication date Aug 4, 2016
- GLOBALFOUNDRIES INC.
- Xiaoli HE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET CONFORMAL JUNCTION AND ABRUPT JUNCTION WITH REDUCED DAMAGE M...
- Publication number 20160190252
- Publication date Jun 30, 2016
- GLOBALFOUNDRIES INC.
- Peijie FENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET CONFORMAL JUNCTION AND HIGH EPI SURFACE DOPANT CONCENTRATION...
- Publication number 20160190251
- Publication date Jun 30, 2016
- GLOBALFOUNDRIES INC.
- Peijie FENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EMBEDDED DRAM IN REPLACEMENT METAL GATE TECHNOLOGY
- Publication number 20160126245
- Publication date May 5, 2016
- GLOBALFOUNDRIES INC.
- Yanxiang LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET SEMICONDUCTOR DEVICE HAVING LOCAL BURIED OXIDE
- Publication number 20160111322
- Publication date Apr 21, 2016
- GLOBALFOUNDRIES INC.
- Yanxiang LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-PLANAR VERTICAL DUAL SOURCE DRIFT METAL-OXIDE SEMICONDUCTOR (VD...
- Publication number 20160104774
- Publication date Apr 14, 2016
- GLOBALFOUNDRIES INC.
- Jerome CIAVATTI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF MAKING A SELF-ALIGNED CHANNEL DRIFT DEVICE
- Publication number 20160056265
- Publication date Feb 25, 2016
- GLOBALFOUNDRIES INC.
- Jerome Ciavatti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MACRO DESIGN OF DEVICE CHARACTERIZATION FOR 14NM AND BEYOND TECHNOL...
- Publication number 20160035723
- Publication date Feb 4, 2016
- GLOBALFOUNDRIES INC.
- Xusheng WU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SHALLOW TRENCH ISOLATION
- Publication number 20150348830
- Publication date Dec 3, 2015
- GLOBALFOUNDRIES INC.
- Yanxiang Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON-ON-INSULATOR FINFET WITH BULK SOURCE AND DRAIN
- Publication number 20150287727
- Publication date Oct 8, 2015
- GLOBALFOUNDRIES INC.
- Yanxiang LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIALLY FORMING A SET OF FINS IN A SEMICONDUCTOR DEVICE
- Publication number 20150221770
- Publication date Aug 6, 2015
- GLOBALFOUNDRIES INC.
- Johannes M. van Meer
- H01 - BASIC ELECTRIC ELEMENTS

Yanxiang Liu

Person

Patents Grantslast 30 patents

Contact for semiconductor device

Layout effect mitigation in FinFET

Semiconductor device having local buried oxide

Systems, methods, and apparatus for improved finFETs

Fin field effect transistor (FET) (FinFET) complementary metal oxid...

Fin field effect transistor (FET) (FinFET) complementary metal oxid...

Method and apparatus for selectively forming nitride caps on metal...

Transistor temperature sensing

Modified tunneling field effect transistors and fabrication methods

Method for mitigating layout effect in FINFET

System, apparatus, and method for N/P tuning in a fin-FET

Device and method to connect gate regions separated using a gate cut

Modified tunneling field effect transistors and fabrication methods

Non-planar semiconductor structure with preserved isolation region

Structure and method for tunable memory cells including fin field e...

FinFET device and method of making the same

Embedded DRAM in replacement metal gate technology

Off-center gate cut

Non-planar vertical dual source drift metal-oxide semiconductor (VD...

FinFET conformal junction and high epi surface dopant concentration...

Applying channel stress to Fin field-effect transistors (FETs) (Fin...

FinFET conformal junction and abrupt junction with reduced damage m...

FinFET with cut gate stressor

Integrated circuits having FinFET semiconductor devices and methods...

Epitaxially forming a set of fins in a semiconductor device

Integrated circuits and methods for fabricating integrated circuits...

FinFET conformal junction and high EPI surface dopant concentration...

Methods of making a self-aligned channel drift device

FinFET conformal junction and abrupt junction with reduced damage m...

Silicon-on-insulator finFET with bulk source and drain

Patents Applicationslast 30 patents

SYSTEMS, METHODS, AND APPARATUS FOR IMPROVED FINFETS

LAYOUT EFFECT MITIGATION IN FINFET

LAYOUT EFFECT MITIGATION IN FINFET

CONTACT FOR SEMICONDUCTOR DEVICE

FIN FIELD EFFECT TRANSISTOR (FET) (FINFET) COMPLEMENTARY METAL OXID...

FORMING A SELF-ALIGNED SINGLE DIFFUSION BREAK (SDB) ISOLATION STRUC...

SYSTEM, APPARATUS, AND METHOD FOR N/P TUNING IN A FIN-FET

MODIFIED TUNNELING FIELD EFFECT TRANSISTORS AND FABRICATION METHODS

TRANSISTOR TEMPERATURE SENSING

FINFET DEVICE AND METHOD OF MAKING THE SAME

DEVICE AND METHOD TO CONNECT GATE REGIONS SEPARATED USING A GATE CUT

STRUCTURE AND METHOD FOR TUNABLE MEMORY CELLS INCLUDING FIN FIELD E...

METHOD AND APPARATUS FOR SELECTIVELY FORMING NITRIDE CAPS ON METAL...

FINFET CONFORMAL JUNCTION AND HIGH EPI SURFACE DOPANT CONCENTRATION...

FINFET WITH CUT GATE STRESSOR

FINFET CONFORMAL JUNCTION AND ABRUPT JUNCTION WITH REDUCED DAMAGE M...

FORMING TUNNELING FIELD-EFFECT TRANSISTOR WITH STACKING FAULT AND R...

SYSTEM, APPARATUS, AND METHOD FOR N/P TUNING IN A FIN-FET

OFF-CENTER GATE CUT

NON-PLANAR SEMICONDUCTOR STRUCTURE WITH PRESERVED ISOLATION REGION

FINFET CONFORMAL JUNCTION AND ABRUPT JUNCTION WITH REDUCED DAMAGE M...

FINFET CONFORMAL JUNCTION AND HIGH EPI SURFACE DOPANT CONCENTRATION...

EMBEDDED DRAM IN REPLACEMENT METAL GATE TECHNOLOGY

FINFET SEMICONDUCTOR DEVICE HAVING LOCAL BURIED OXIDE

NON-PLANAR VERTICAL DUAL SOURCE DRIFT METAL-OXIDE SEMICONDUCTOR (VD...

METHODS OF MAKING A SELF-ALIGNED CHANNEL DRIFT DEVICE

MACRO DESIGN OF DEVICE CHARACTERIZATION FOR 14NM AND BEYOND TECHNOL...

SHALLOW TRENCH ISOLATION

SILICON-ON-INSULATOR FINFET WITH BULK SOURCE AND DRAIN

EPITAXIALLY FORMING A SET OF FINS IN A SEMICONDUCTOR DEVICE