Yanzhen Wang

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Clifton Park, NY, US

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Patents Grantslast 30 patents

Information Patent Grant
Single-diffusion break structure for fin-type field effect transistors
- Patent number 10,177,151
- Issue date Jan 8, 2019
- GLOBALFOUNDRIES Inc.
- Yanzhen Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods, apparatus, and system for fabricating finFET devices with...
- Patent number 10,153,211
- Issue date Dec 11, 2018
- GLOBALFOUNDRIES Inc.
- Yanzhen Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming short channel and long channel finFET devices so...
- Patent number 10,074,732
- Issue date Sep 11, 2018
- GLOBALFOUNDRIES Inc.
- Xinyuan Dou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin-type field effect transistors with single-diffusion breaks and...
- Patent number 10,014,296
- Issue date Jul 3, 2018
- GLOBALFOUNDRIES Inc.
- Xinyuan Dou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation of work-function layers for gate electrode using a gas cl...
- Patent number 9,748,392
- Issue date Aug 29, 2017
- GLOBALFOUNDRIES Inc.
- Yanzhen Wang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SINGLE-DIFFUSION BREAK STRUCTURE FOR FIN-TYPE FIELD EFFECT TRANSISTORS
- Publication number 20180374851
- Publication date Dec 27, 2018
- GLOBALFOUNDRIES INC.
- YANZHEN WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS, APPARATUS, AND SYSTEM FOR FABRICATING FINFET DEVICES WITH...
- Publication number 20180358267
- Publication date Dec 13, 2018
- GLOBALFOUNDRIES INC.
- Yanzhen Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMATION OF WORK-FUNCTION LAYERS FOR GATE ELECTRODE USING A GAS CL...
- Publication number 20170250284
- Publication date Aug 31, 2017
- GLOBALFOUNDRIES INC.
- Yanzhen WANG
- H01 - BASIC ELECTRIC ELEMENTS