Yao Jin

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Meridian, ID, US

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Patents Grantslast 30 patents

Information Patent Grant
Fabrication of electrodes for memory cells
- Patent number 11,545,623
- Issue date Jan 3, 2023
- Micron Technology, Inc.
- Pengyuan Zheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of electrodes for memory cells
- Patent number 10,825,987
- Issue date Nov 3, 2020
- Micron Technology, Inc.
- Pengyuan Zheng
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
FABRICATION OF ELECTRODES FOR MEMORY CELLS
- Publication number 20210098697
- Publication date Apr 1, 2021
- Micron Technology, Inc.
- Pengyuan Zheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE CHANGE MEMORY STRUCTURES AND DEVICES
- Publication number 20210050512
- Publication date Feb 18, 2021
- Intel Corporation
- Davide Fugazza
- G11 - INFORMATION STORAGE
Information Patent Application
FABRICATION OF ELECTRODES FOR MEMORY CELLS
- Publication number 20190378975
- Publication date Dec 12, 2019
- Micron Technology, Inc.
- Pengyuan Zheng
- H01 - BASIC ELECTRIC ELEMENTS