Yao Yao

Person

Poughkeepsie, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Vertical FET replacement gate formation with variable fin pitch
- Patent number 12,255,204
- Issue date Mar 18, 2025
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual step etch-back inner spacer formation
- Patent number 11,990,508
- Issue date May 21, 2024
- International Business Machines Corporation
- Andrew M. Greene
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Protective bilayer inner spacer for nanosheet devices
- Patent number 11,695,057
- Issue date Jul 4, 2023
- International Business Machines Corporation
- Yao Yao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual step etch-back inner spacer formation
- Patent number 11,139,372
- Issue date Oct 5, 2021
- International Business Machines Corporation
- Andrew M. Greene
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Protective bilayer inner spacer for nanosheet devices
- Patent number 11,081,568
- Issue date Aug 3, 2021
- International Business Machines Corporation
- Yao Yao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source and drain EPI protective spacer during single diffusion brea...
- Patent number 11,056,399
- Issue date Jul 6, 2021
- International Business Machines Corporation
- Yao Yao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Photodetector having a tunable junction region doping profile confi...
- Patent number 10,546,971
- Issue date Jan 28, 2020
- International Business Machines Corporation
- Joel P. de Souza
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction diode having a narrow bandgap semiconductor
- Patent number 10,158,039
- Issue date Dec 18, 2018
- International Business Machines Corporation
- Joel P. De Souza
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
VERTICAL FET REPLACEMENT GATE FORMATION WITH VARIABLE FIN PITCH
- Publication number 20230086960
- Publication date Mar 23, 2023
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL STEP ETCH-BACK INNER SPACER FORMATION
- Publication number 20210384296
- Publication date Dec 9, 2021
- International Business Machines Corporation
- Andrew M. Greene
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROTECTIVE BILAYER INNER SPACER FOR NANOSHEET DEVICES
- Publication number 20210305410
- Publication date Sep 30, 2021
- International Business Machines Corporation
- Yao Yao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL STEP ETCH-BACK INNER SPACER FORMATION
- Publication number 20210043728
- Publication date Feb 11, 2021
- International Business Machines Corporation
- Andrew M. Greene
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROTECTIVE BILAYER INNER SPACER FOR NANOSHEET DEVICES
- Publication number 20210028297
- Publication date Jan 28, 2021
- International Business Machines Corporation
- Yao Yao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE AND DRAIN EPI PROTECTIVE SPACER DURING SINGLE DIFFUSION BREA...
- Publication number 20200328121
- Publication date Oct 15, 2020
- International Business Machines Corporation
- Yao Yao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHOTODETECTOR HAVING A TUNABLE JUNCTION REGION DOPING PROFILE CONFI...
- Publication number 20190214521
- Publication date Jul 11, 2019
- International Business Machines Corporation
- Joel P. de Souza
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Vertical FET replacement gate formation with variable fin pitch

Dual step etch-back inner spacer formation

Protective bilayer inner spacer for nanosheet devices

Dual step etch-back inner spacer formation

Protective bilayer inner spacer for nanosheet devices

Source and drain EPI protective spacer during single diffusion brea...

Photodetector having a tunable junction region doping profile confi...

Heterojunction diode having a narrow bandgap semiconductor

Patents Applicationslast 30 patents

VERTICAL FET REPLACEMENT GATE FORMATION WITH VARIABLE FIN PITCH

DUAL STEP ETCH-BACK INNER SPACER FORMATION

PROTECTIVE BILAYER INNER SPACER FOR NANOSHEET DEVICES

DUAL STEP ETCH-BACK INNER SPACER FORMATION

PROTECTIVE BILAYER INNER SPACER FOR NANOSHEET DEVICES

SOURCE AND DRAIN EPI PROTECTIVE SPACER DURING SINGLE DIFFUSION BREA...

PHOTODETECTOR HAVING A TUNABLE JUNCTION REGION DOPING PROFILE CONFI...