Yaobin Feng

Person

Wuhan, CN

People

Patents Grantslast 30 patents

Information Patent Grant
Openings layout of three-dimensional memory device
- Patent number 11,903,195
- Issue date Feb 13, 2024
- Yangtze Memory Technologies Co., Ltd.
- Jia He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Openings layout of three-dimensional memory device
- Patent number 11,574,919
- Issue date Feb 7, 2023
- Yangtze Memory Technologies Co., Ltd.
- Jia He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Systems and methods for evaluating critical dimensions based on dif...
- Patent number 11,378,525
- Issue date Jul 5, 2022
- Yangtze Memory Technologies Co., Ltd.
- Yaobin Feng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and structure for cutting dense line patterns using self-ali...
- Patent number 11,251,043
- Issue date Feb 15, 2022
- Yangtze Memory Technologies Co., Ltd.
- Lu Ming Fan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Systems and methods for evaluating critical dimensions based on dif...
- Patent number 11,162,907
- Issue date Nov 2, 2021
- Yangtze Memory Technologies Co., Ltd.
- Yaobin Feng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Marks for locating patterns in semiconductor fabrication
- Patent number 10,811,363
- Issue date Oct 20, 2020
- Yangtze Memory Technologies Co., Ltd.
- Dou Dou Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Openings layout of three-dimensional memory device
- Patent number 10,804,283
- Issue date Oct 13, 2020
- Yangtze Memory Technologies Co., Ltd.
- Jia He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and structure for cutting dense line patterns using self-ali...
- Patent number 10,727,056
- Issue date Jul 28, 2020
- Yangtze Memory Technologies Co., Ltd.
- Lu Ming Fan
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
OPENINGS LAYOUT OF THREE-DIMENSIONAL MEMORY DEVICE
- Publication number 20240107757
- Publication date Mar 28, 2024
- Yangtze Memory Technologies Co., Ltd.
- Jia He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Openings Layout of Three-Dimensional Memory Device
- Publication number 20230157020
- Publication date May 18, 2023
- Yangtze Memory Technologies Co., Ltd.
- Jia He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND STRUCTURE FOR CUTTING DENSE LINE PATTERNS USING SELF-ALI...
- Publication number 20220130671
- Publication date Apr 28, 2022
- Yangtze Memory Technologies Co., Ltd.
- Lu Ming FAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SYSTEMS AND METHODS FOR EVALUATING CRITICAL DIMENSIONS BASED ON DIF...
- Publication number 20210172881
- Publication date Jun 10, 2021
- YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Yaobin Feng
- G01 - MEASURING TESTING
Information Patent Application
Openings Layout of Three-Dimensional Memory Device
- Publication number 20210151458
- Publication date May 20, 2021
- Yangtze Memory Technologies Co., Ltd.
- Jia He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SYSTEMS AND METHODS FOR EVALUATING CRITICAL DIMENSIONS BASED ON DIF...
- Publication number 20210116389
- Publication date Apr 22, 2021
- YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Yaobin Feng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND STRUCTURE FOR CUTTING DENSE LINE PATTERNS USING SELF-ALI...
- Publication number 20200321215
- Publication date Oct 8, 2020
- Yangtze Memory Technologies Co., Ltd.
- Lu Ming FAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MARKS FOR LOCATING PATTERNS IN SEMICONDUCTOR FABRICATION
- Publication number 20200258843
- Publication date Aug 13, 2020
- Yangtze Memory Technologies Co., Ltd.
- Dou Dou Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND STRUCTURE FOR CUTTING DENSE LINE PATTERNS USING SELF-ALI...
- Publication number 20190157082
- Publication date May 23, 2019
- Yangtze Memory Technologies Co., Ltd.
- Lu Ming FAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Openings Layout of Three-Dimensional Memory Device
- Publication number 20190013327
- Publication date Jan 10, 2019
- Yangtze Memory Technologies Co., Ltd.
- Jia He
- H01 - BASIC ELECTRIC ELEMENTS

Yaobin Feng

Person

Patents Grantslast 30 patents

Openings layout of three-dimensional memory device

Openings layout of three-dimensional memory device

Systems and methods for evaluating critical dimensions based on dif...

Method and structure for cutting dense line patterns using self-ali...

Systems and methods for evaluating critical dimensions based on dif...

Marks for locating patterns in semiconductor fabrication

Openings layout of three-dimensional memory device

Method and structure for cutting dense line patterns using self-ali...

Patents Applicationslast 30 patents

OPENINGS LAYOUT OF THREE-DIMENSIONAL MEMORY DEVICE

Openings Layout of Three-Dimensional Memory Device

METHOD AND STRUCTURE FOR CUTTING DENSE LINE PATTERNS USING SELF-ALI...

SYSTEMS AND METHODS FOR EVALUATING CRITICAL DIMENSIONS BASED ON DIF...

Openings Layout of Three-Dimensional Memory Device

SYSTEMS AND METHODS FOR EVALUATING CRITICAL DIMENSIONS BASED ON DIF...

METHOD AND STRUCTURE FOR CUTTING DENSE LINE PATTERNS USING SELF-ALI...

MARKS FOR LOCATING PATTERNS IN SEMICONDUCTOR FABRICATION

METHOD AND STRUCTURE FOR CUTTING DENSE LINE PATTERNS USING SELF-ALI...

Openings Layout of Three-Dimensional Memory Device