Yaohua YANG

Person

Wuhan, CN

People

Patents Grantslast 30 patents

Information Patent Grant
Word line structure of three-dimensional memory device
- Patent number 12,232,320
- Issue date Feb 18, 2025
- Yangtze Memory Technologies Co., Ltd.
- Qiang Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Openings layout of three-dimensional memory device
- Patent number 11,903,195
- Issue date Feb 13, 2024
- Yangtze Memory Technologies Co., Ltd.
- Jia He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Word line structure of three-dimensional memory device
- Patent number 11,792,989
- Issue date Oct 17, 2023
- Yangtze Memory Technologies Co., Ltd.
- Qiang Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Openings layout of three-dimensional memory device
- Patent number 11,574,919
- Issue date Feb 7, 2023
- Yangtze Memory Technologies Co., Ltd.
- Jia He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Word line structure of three-dimensional memory device
- Patent number 11,222,903
- Issue date Jan 11, 2022
- Yangtze Memory Technologies Co., Ltd.
- Qiang Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Openings layout of three-dimensional memory device
- Patent number 10,804,283
- Issue date Oct 13, 2020
- Yangtze Memory Technologies Co., Ltd.
- Jia He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Word line structure of three-dimensional memory device
- Patent number 10,651,192
- Issue date May 12, 2020
- Yangtze Memory Technologies Co, Ltd.
- Qiang Xu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
OPENINGS LAYOUT OF THREE-DIMENSIONAL MEMORY DEVICE
- Publication number 20240107757
- Publication date Mar 28, 2024
- Yangtze Memory Technologies Co., Ltd.
- Jia He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WORD LINE STRUCTURE OF THREE-DIMENSIONAL MEMORY DEVICE
- Publication number 20230413560
- Publication date Dec 21, 2023
- Yangtze Memory Technologies Co., Ltd.
- Qiang XU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Openings Layout of Three-Dimensional Memory Device
- Publication number 20230157020
- Publication date May 18, 2023
- Yangtze Memory Technologies Co., Ltd.
- Jia He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WORD LINE STRUCTURE OF THREE-DIMENSIONAL MEMORY DEVICE
- Publication number 20220059564
- Publication date Feb 24, 2022
- Yangtze Memory Technologies Co., Ltd.
- Qiang XU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Openings Layout of Three-Dimensional Memory Device
- Publication number 20210151458
- Publication date May 20, 2021
- Yangtze Memory Technologies Co., Ltd.
- Jia He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WORD LINE STRUCTURE OF THREE-DIMENSIONAL MEMORY DEVICE
- Publication number 20200243557
- Publication date Jul 30, 2020
- Yangtze Memory Technologies Co., Ltd.
- Qiang XU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WORD LINE STRUCTURE OF THREE-DIMENSIONAL MEMORY DEVICE
- Publication number 20190043883
- Publication date Feb 7, 2019
- Yangtze Memory Technologies Co., Ltd.
- Qiang XU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPOSITE SUBSTRATE OF THREE-DIMENSIONAL MEMORY DEVICES
- Publication number 20190013326
- Publication date Jan 10, 2019
- Yangtze Memory Technologies Co., Ltd.
- Wenyu HUA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Openings Layout of Three-Dimensional Memory Device
- Publication number 20190013327
- Publication date Jan 10, 2019
- Yangtze Memory Technologies Co., Ltd.
- Jia He
- H01 - BASIC ELECTRIC ELEMENTS

Yaohua YANG

Person

Patents Grantslast 30 patents

Word line structure of three-dimensional memory device

Openings layout of three-dimensional memory device

Word line structure of three-dimensional memory device

Openings layout of three-dimensional memory device

Word line structure of three-dimensional memory device

Openings layout of three-dimensional memory device

Word line structure of three-dimensional memory device

Patents Applicationslast 30 patents

OPENINGS LAYOUT OF THREE-DIMENSIONAL MEMORY DEVICE

WORD LINE STRUCTURE OF THREE-DIMENSIONAL MEMORY DEVICE

Openings Layout of Three-Dimensional Memory Device

WORD LINE STRUCTURE OF THREE-DIMENSIONAL MEMORY DEVICE

Openings Layout of Three-Dimensional Memory Device

WORD LINE STRUCTURE OF THREE-DIMENSIONAL MEMORY DEVICE

WORD LINE STRUCTURE OF THREE-DIMENSIONAL MEMORY DEVICE

COMPOSITE SUBSTRATE OF THREE-DIMENSIONAL MEMORY DEVICES

Openings Layout of Three-Dimensional Memory Device