Yari Ferrante

Person

San Jose, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Tetragonal half metallic half-Heusler compounds
- Patent number 12,136,447
- Issue date Nov 5, 2024
- International Business Machines Corporation
- Sergey Faleev
- G11 - INFORMATION STORAGE
Information Patent Grant
Tunable templating layers for perpendicularly magnetized Heusler films
- Patent number 11,804,321
- Issue date Oct 31, 2023
- Samsung Electronics Co., Ltd.
- Jaewoo Jeong
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Ferrimagnetic Heusler compounds with high spin polarization
- Patent number 11,756,578
- Issue date Sep 12, 2023
- Samsung Electronics Co., Ltd.
- Jaewoo Jeong
- G11 - INFORMATION STORAGE
Information Patent Grant
Templating layers for perpendicularly magnetized Heusler films/comp...
- Patent number 11,751,486
- Issue date Sep 5, 2023
- Samsung Electronics Co., Ltd.
- Jaewoo Jeong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic junctions having enhanced tunnel magnetoresistance and uti...
- Patent number 11,665,979
- Issue date May 30, 2023
- Samsung Electronics Co., Ltd.
- Jaewoo Jeong
- G11 - INFORMATION STORAGE
Information Patent Grant
Heusler compounds with non-magnetic spacer layer for formation of s...
- Patent number 11,557,721
- Issue date Jan 17, 2023
- International Business Machines Corporation
- Panagiotis Charilaos Filippou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
IrAl as a non-magnetic spacer layer for formation of synthetic anti...
- Patent number 11,538,987
- Issue date Dec 27, 2022
- Samsung Electronics Co., Ltd.
- Jaewoo Jeong
- G11 - INFORMATION STORAGE
Information Patent Grant
Spin transfer torque switching of a magnetic layer with volume unia...
- Patent number 11,005,029
- Issue date May 11, 2021
- Samsung Electronics Co., Ltd.
- Jaewoo Jeong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heusler compounds with non-magnetic spacer layer for formation of s...
- Patent number 10,957,848
- Issue date Mar 23, 2021
- International Business Machines Corporation
- Panagiotis Charilaos Filippou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tunable tetragonal ferrimagnetic heusler compound with PMA and high...
- Patent number 10,937,953
- Issue date Mar 2, 2021
- Samsung Electronics Co., Ltd.
- Jaewoo Jeong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Templating layers for forming highly textured thin films of heusler...
- Patent number 10,651,234
- Issue date May 12, 2020
- Samsung Electronics Co., Ltd.
- Jaewoo Jeong
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
TETRAGONAL HALF METALLIC HEUSLER COMPOUNDS
- Publication number 20230320231
- Publication date Oct 5, 2023
- International Business Machines Corporation
- Sergey Faleev
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TETRAGONAL HALF METALLIC HALF-HEUSLER COMPOUNDS
- Publication number 20230317129
- Publication date Oct 5, 2023
- International Business Machines Corporation
- Sergey Faleev
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC TUNNEL JUNCTION INCLUDING HEXAGONAL MULTI-LAYERED STRUCTURE
- Publication number 20230180624
- Publication date Jun 8, 2023
- Samsung Electronics Co., Ltd.
- Sergey Faleev
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TUNING PERPENDICULAR MAGNETIC ANISOTROPY OF HEUSLER COMPOUND IN MRA...
- Publication number 20230116592
- Publication date Apr 13, 2023
- International Business Machines Corporation
- MAHESH SAMANT
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERRIMAGNETIC HEUSLER COMPOUNDS WITH HIGH SPIN POLARIZATION
- Publication number 20220262555
- Publication date Aug 18, 2022
- Samsung Electronics Co., Ltd.
- Jaewoo Jeong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INSERTION LAYERS FOR PERPENDICULARLY MAGNETIZED HEUSLER LAYERS WITH...
- Publication number 20220223783
- Publication date Jul 14, 2022
- Samsung Electronics Co., Ltd.
- Jaewoo Jeong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TUNABLE TEMPLATING LAYERS FOR PERPENDICULARLY MAGNETIZED HEUSLER FILMS
- Publication number 20220165469
- Publication date May 26, 2022
- Samsung Electronics Co., Ltd.
- Jaewoo Jeong
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
TEMPLATING LAYERS FOR PERPENDICULARLY MAGNETIZED HEUSLER FILMS/COMP...
- Publication number 20220165939
- Publication date May 26, 2022
- Samsung Electronics Co., Ltd.
- Jaewoo Jeong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IrAl AS A NON-MAGNETIC SPACER LAYER FOR FORMATION OF SYNTHETIC ANTI...
- Publication number 20220165938
- Publication date May 26, 2022
- Samsung Electronics Co., Ltd.
- Jaewoo Jeong
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC JUNCTIONS HAVING ENHANCED TUNNEL MAGNETORESISTANCE AND UTI...
- Publication number 20210175416
- Publication date Jun 10, 2021
- Samsung Electronics Co., Ltd.
- Jaewoo Jeong
- G11 - INFORMATION STORAGE
Information Patent Application
HEUSLER COMPOUNDS WITH NON-MAGNETIC SPACER LAYER FOR FORMATION OF S...
- Publication number 20210167280
- Publication date Jun 3, 2021
- International Business Machines Corporation
- Panagiotis Charilaos Filippou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Heusler Compounds with Non-Magnetic Spacer Layer for Formation of S...
- Publication number 20200259076
- Publication date Aug 13, 2020
- Panagiotis Charilaos Filippou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TUNABLE TETRAGONAL FERRIMAGNETIC HEUSLER COMPOUND WITH PMA AND HIGH...
- Publication number 20200243755
- Publication date Jul 30, 2020
- Samsung Electronics Co., Ltd.
- Jaewoo Jeong
- G11 - INFORMATION STORAGE
Information Patent Application
SPIN TRANSFER TORQUE SWITCHING OF A MAGNETIC LAYER WITH VOLUME UNIA...
- Publication number 20200105999
- Publication date Apr 2, 2020
- Samsung Electronics Co., Ltd.
- Jaewoo Jeong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TEMPLATING LAYERS FOR FORMING HIGHLY TEXTURED THIN FILMS OF HEUSLER...
- Publication number 20190305040
- Publication date Oct 3, 2019
- Samsung Electronics Co., Ltd.
- Jaewoo Jeong
- H01 - BASIC ELECTRIC ELEMENTS

Yari Ferrante

Person

Patents Grantslast 30 patents

Tetragonal half metallic half-Heusler compounds

Tunable templating layers for perpendicularly magnetized Heusler films

Ferrimagnetic Heusler compounds with high spin polarization

Templating layers for perpendicularly magnetized Heusler films/comp...

Magnetic junctions having enhanced tunnel magnetoresistance and uti...

Heusler compounds with non-magnetic spacer layer for formation of s...

IrAl as a non-magnetic spacer layer for formation of synthetic anti...

Spin transfer torque switching of a magnetic layer with volume unia...

Heusler compounds with non-magnetic spacer layer for formation of s...

Tunable tetragonal ferrimagnetic heusler compound with PMA and high...

Templating layers for forming highly textured thin films of heusler...

Patents Applicationslast 30 patents

TETRAGONAL HALF METALLIC HEUSLER COMPOUNDS

TETRAGONAL HALF METALLIC HALF-HEUSLER COMPOUNDS

MAGNETIC TUNNEL JUNCTION INCLUDING HEXAGONAL MULTI-LAYERED STRUCTURE

TUNING PERPENDICULAR MAGNETIC ANISOTROPY OF HEUSLER COMPOUND IN MRA...

FERRIMAGNETIC HEUSLER COMPOUNDS WITH HIGH SPIN POLARIZATION

INSERTION LAYERS FOR PERPENDICULARLY MAGNETIZED HEUSLER LAYERS WITH...

TUNABLE TEMPLATING LAYERS FOR PERPENDICULARLY MAGNETIZED HEUSLER FILMS

TEMPLATING LAYERS FOR PERPENDICULARLY MAGNETIZED HEUSLER FILMS/COMP...

IrAl AS A NON-MAGNETIC SPACER LAYER FOR FORMATION OF SYNTHETIC ANTI...

MAGNETIC JUNCTIONS HAVING ENHANCED TUNNEL MAGNETORESISTANCE AND UTI...

HEUSLER COMPOUNDS WITH NON-MAGNETIC SPACER LAYER FOR FORMATION OF S...

Heusler Compounds with Non-Magnetic Spacer Layer for Formation of S...

TUNABLE TETRAGONAL FERRIMAGNETIC HEUSLER COMPOUND WITH PMA AND HIGH...

SPIN TRANSFER TORQUE SWITCHING OF A MAGNETIC LAYER WITH VOLUME UNIA...

TEMPLATING LAYERS FOR FORMING HIGHLY TEXTURED THIN FILMS OF HEUSLER...