Yasuhiro Ebihara

Person

Nisshin-shi Aichi-ken, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Manufacturing method of semiconductor device including semiconducto...
- Patent number 11,637,198
- Issue date Apr 25, 2023
- Denso Corporation
- Yuichi Takeuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including saturation current suppression layer
- Patent number 11,201,239
- Issue date Dec 14, 2021
- Denso Corporation
- Yuichi Takeuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing same
- Patent number 11,107,911
- Issue date Aug 31, 2021
- Denso Corporation
- Yuichi Takeuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device and method for manufacturing same
- Patent number 11,063,145
- Issue date Jul 13, 2021
- Denso Corporation
- Shuhei Mitani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide single crystal, silicon carbide single crystal wafe...
- Patent number 10,181,517
- Issue date Jan 15, 2019
- Denso Corporation
- Takeshi Okamoto
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR THE SAME
- Publication number 20220045211
- Publication date Feb 10, 2022
- DENSO CORPORATION
- Yuichi TAKEUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR THE SAME
- Publication number 20200220008
- Publication date Jul 9, 2020
- DENSO CORPORATION
- Yuichi TAKEUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
- Publication number 20200168732
- Publication date May 28, 2020
- DENSO CORPORATION
- Shuhei MITANI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
- Publication number 20200161467
- Publication date May 21, 2020
- DENSO CORPORATION
- Yuichi TAKEUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SWITCHING DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20190140094
- Publication date May 9, 2019
- Toyota Jidosha Kabushiki Kaisha
- Yuto Kurokawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SINGLE CRYSTAL, SILICON CARBIDE SINGLE CRYSTAL WAFE...
- Publication number 20180219069
- Publication date Aug 2, 2018
- Denso Corporation
- Takeshi OKAMOTO
- C30 - CRYSTAL GROWTH
Information Patent Application
INSULATED GATE TYPE SWITCHING DEVICE
- Publication number 20160064550
- Publication date Mar 3, 2016
- Toyota Jidosha Kabushiki Kaisha
- Masahiro Sugimoto
- H01 - BASIC ELECTRIC ELEMENTS

Yasuhiro Ebihara

Person

Patents Grantslast 30 patents

Manufacturing method of semiconductor device including semiconducto...

Semiconductor device including saturation current suppression layer

Semiconductor device and method for manufacturing same

Silicon carbide semiconductor device and method for manufacturing same

Silicon carbide single crystal, silicon carbide single crystal wafe...

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR THE SAME

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR THE SAME

SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

SWITCHING DEVICE AND METHOD OF MANUFACTURING THE SAME

SILICON CARBIDE SINGLE CRYSTAL, SILICON CARBIDE SINGLE CRYSTAL WAFE...

INSULATED GATE TYPE SWITCHING DEVICE