Yasuhiro KAGAWA

Person

Tokyo, JP

People

Patents Grantslast 30 patents

Information Patent Grant
SiC-mosfet
- Patent number 12,107,158
- Issue date Oct 1, 2024
- Mitsubishi Electric Corporation
- Katsutoshi Sugawara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device, power converter, and method o...
- Patent number 11,984,492
- Issue date May 14, 2024
- Mitsubishi Electric Corporation
- Yuji Ebiike
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,658,238
- Issue date May 23, 2023
- Mitsubishi Electric Corporation
- Katsutoshi Sugawara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing same
- Patent number 11,217,449
- Issue date Jan 4, 2022
- Mitsubishi Electric Corporation
- Tomohide Terashima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing same
- Patent number 11,183,386
- Issue date Nov 23, 2021
- Mitsubishi Electric Corporation
- Tomohide Terashima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device and power conversion apparatus
- Patent number 10,797,169
- Issue date Oct 6, 2020
- Mitsubishi Electric Corporation
- Kazuya Ishibashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing thereof, and power...
- Patent number 10,580,889
- Issue date Mar 3, 2020
- Mitsubishi Electric Corporation
- Yasuhiro Kagawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulated gate silicon carbide semiconductor device and method for...
- Patent number 10,510,843
- Issue date Dec 17, 2019
- Mitsubishi Electric Corporation
- Yasuhiro Kagawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a gate trench and an outside trench
- Patent number 10,453,951
- Issue date Oct 22, 2019
- Mitsubishi Electric Corporation
- Yutaka Fukui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device, manufacturing method therefor...
- Patent number 10,431,658
- Issue date Oct 1, 2019
- Mitsubishi Electric Corporation
- Yasuhiro Kagawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device
- Patent number 10,347,724
- Issue date Jul 9, 2019
- Mitsubishi Electric Corporation
- Rina Tanaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 10,312,233
- Issue date Jun 4, 2019
- Mitsubishi Electric Corporation
- Katsutoshi Sugawara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device
- Patent number 10,229,969
- Issue date Mar 12, 2019
- Mitsubishi Electric Corporation
- Yasuhiro Kagawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device
- Patent number 10,199,457
- Issue date Feb 5, 2019
- Mitsubishi Electric Corporation
- Rina Tanaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device and method for manufacturing same
- Patent number 10,157,986
- Issue date Dec 18, 2018
- Mitsubishi Electric Corporation
- Rina Tanaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench-gate type semiconductor device and manufacturing method ther...
- Patent number 9,985,093
- Issue date May 29, 2018
- Mitsubishi Electric Corporation
- Yasuhiro Kagawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device
- Patent number 9,972,676
- Issue date May 15, 2018
- Mitsubishi Electric Corporation
- Rina Tanaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon-carbide semiconductor device and manufacturing method thereof
- Patent number 9,954,072
- Issue date Apr 24, 2018
- Mitsubishi Electric Corporation
- Rina Tanaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device and manufacturing method for same
- Patent number 9,825,164
- Issue date Nov 21, 2017
- Mitsubishi Electric Corporation
- Yasuhiro Kagawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device and manufacturing method therefor
- Patent number 9,773,874
- Issue date Sep 26, 2017
- Mitsubishi Electric Corporation
- Nobuo Fujiwara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulated gate silicon carbide semiconductor device and method for...
- Patent number 9,741,797
- Issue date Aug 22, 2017
- Mitsubishi Electric Corporation
- Yasuhiro Kagawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 9,698,221
- Issue date Jul 4, 2017
- Mitsubishi Electric Corporation
- Katsutoshi Sugawara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device and manufacturing method therefor
- Patent number 9,691,858
- Issue date Jun 27, 2017
- Mitsubishi Electric Corporation
- Nobuo Fujiwara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench-gate type semiconductor device and manufacturing method ther...
- Patent number 9,614,029
- Issue date Apr 4, 2017
- Mitsubishi Electric Corporation
- Yasuhiro Kagawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 9,525,057
- Issue date Dec 20, 2016
- Mitsubishi Electric Corporation
- Naruhisa Miura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon-carbide semiconductor device and method for manufacturing t...
- Patent number 9,425,261
- Issue date Aug 23, 2016
- Mitsubishi Electric Corporation
- Yutaka Fukui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon-carbide semiconductor device and manufacturing method therefor
- Patent number 9,337,271
- Issue date May 10, 2016
- Mitsubishi Electric Corporation
- Yutaka Fukui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device
- Patent number 9,293,572
- Issue date Mar 22, 2016
- Mitsubishi Electric Corporation
- Akihiko Furukawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench-gate type semiconductor device and manufacturing method ther...
- Patent number 9,224,860
- Issue date Dec 29, 2015
- Mitsubishi Electric Corporation
- Yasuhiro Kagawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device and method of fabricating same
- Patent number 9,111,751
- Issue date Aug 18, 2015
- Mitsubishi Electric Corporation
- Akihiko Furukawa
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SiC-MOSFET
- Publication number 20220293783
- Publication date Sep 15, 2022
- Mitsubishi Electric Corporation
- Katsutoshi SUGAWARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE, POWER CONVERTER, AND METHOD O...
- Publication number 20220254904
- Publication date Aug 11, 2022
- Mitsubishi Electric Corporation
- Yuji EBIIKE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20210091220
- Publication date Mar 25, 2021
- Mitsubishi Electric Corporation
- Katsutoshi SUGAWARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME
- Publication number 20200203166
- Publication date Jun 25, 2020
- Mitsubishi Electric Corporation
- Tomohide TERASHIMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE AND POWER CONVERSION APPARATUS
- Publication number 20200144409
- Publication date May 7, 2020
- Mitsubishi Electric Corporation
- Kazuya ISHIBASHI
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE, POWER CONVERTER, AND METHOD O...
- Publication number 20190348524
- Publication date Nov 14, 2019
- Mitsubishi Electric Corporation
- Yuji EBIIKE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THEREOF, AND POWER...
- Publication number 20190259872
- Publication date Aug 22, 2019
- Mitsubishi Electric Corporation
- Yasuhiro KAGAWA
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE, MANUFACTURING METHOD THEREFOR...
- Publication number 20190013385
- Publication date Jan 10, 2019
- Mitsubishi Electric Corporation
- Yasuhiro KAGAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE
- Publication number 20180358429
- Publication date Dec 13, 2018
- MITSUBISHI ELECTRIC CORPORATION
- Rina TANAKA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICE
- Publication number 20180358431
- Publication date Dec 13, 2018
- MITSUBISHI ELECTRIC CORPORATION
- Yasuhiro KAGAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE
- Publication number 20180315819
- Publication date Nov 1, 2018
- MITSUBISHI ELECTRIC CORPORATION
- Rina TANAKA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
- Publication number 20180076285
- Publication date Mar 15, 2018
- MITSUBISHI ELECTRIC CORPORATION
- Rina TANAKA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INSULATED GATE SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR...
- Publication number 20170309711
- Publication date Oct 26, 2017
- MITSUBISHI ELECTRIC CORPORATION
- Yasuhiro KAGAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20170301788
- Publication date Oct 19, 2017
- MITSUBISHI ELECTRIC CORPORATION
- Yutaka FUKUI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20170271323
- Publication date Sep 21, 2017
- MITSUBISHI ELECTRIC CORPORATION
- Katsutoshi SUGAWARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH-GATE TYPE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THER...
- Publication number 20170162649
- Publication date Jun 8, 2017
- MITSUBISHI ELECTRIC CORPORATION
- Yasuhiro Kagawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20170053984
- Publication date Feb 23, 2017
- MITSUBISHI ELECTRIC CORPORATION
- Katsutoshi SUGAWARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE
- Publication number 20160336391
- Publication date Nov 17, 2016
- MITSUBISHI ELECTRIC CORPORATION
- Rina TANAKA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
- Publication number 20160211334
- Publication date Jul 21, 2016
- MITSUBISHI ELECTRIC CORPORATION
- Rina TANAKA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR SAME
- Publication number 20160190307
- Publication date Jun 30, 2016
- Mitsubishi Electric Corporation
- Yasuhiro KAGAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON-CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING T...
- Publication number 20160071937
- Publication date Mar 10, 2016
- MITSUBISHI ELECTRIC CORPORATION
- Yutaka FUKUI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH-GATE TYPE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THER...
- Publication number 20160071922
- Publication date Mar 10, 2016
- MITSUBISHI ELECTRIC CORPORATION
- Yasuhiro Kagawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INSULATED GATE SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR...
- Publication number 20150357415
- Publication date Dec 10, 2015
- MITSUBISHI ELECTRIC CORPORATION
- Yasuhiro KAGAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON-CARBIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR
- Publication number 20150333126
- Publication date Nov 19, 2015
- MITSUBISHI ELECTRIC CORPORATION
- Yutaka FUKUI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR
- Publication number 20150287789
- Publication date Oct 8, 2015
- Mitsubishi Electric Corporation
- Nobuo Fujiwara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON-CARBIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20150236119
- Publication date Aug 20, 2015
- Mitsubishi Electric Corporation
- Rina Tanaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
- Publication number 20150108564
- Publication date Apr 23, 2015
- Mitsubishi Electric Corporation
- Naruhisa Miura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICE
- Publication number 20140225114
- Publication date Aug 14, 2014
- Mitsubishi Electric Corporation
- Akihiko Furukawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING SAME
- Publication number 20140001472
- Publication date Jan 2, 2014
- MITSUBISHI ELECTRIC CORPORATION
- Akihiko Furukawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR
- Publication number 20130285140
- Publication date Oct 31, 2013
- Mitsubishi Electric Corporation
- Yasuhiro Kagawa
- H01 - BASIC ELECTRIC ELEMENTS

Yasuhiro KAGAWA

Person

Patents Grantslast 30 patents

SiC-mosfet

Silicon carbide semiconductor device, power converter, and method o...

Semiconductor device

Semiconductor device and method of manufacturing same

Semiconductor device and method of manufacturing same

Silicon carbide semiconductor device and power conversion apparatus

Semiconductor device and method of manufacturing thereof, and power...

Insulated gate silicon carbide semiconductor device and method for...

Semiconductor device having a gate trench and an outside trench

Silicon carbide semiconductor device, manufacturing method therefor...

Silicon carbide semiconductor device

Semiconductor device

Power semiconductor device

Silicon carbide semiconductor device

Silicon carbide semiconductor device and method for manufacturing same

Trench-gate type semiconductor device and manufacturing method ther...

Silicon carbide semiconductor device

Silicon-carbide semiconductor device and manufacturing method thereof

Silicon carbide semiconductor device and manufacturing method for same

Silicon carbide semiconductor device and manufacturing method therefor

Insulated gate silicon carbide semiconductor device and method for...

Semiconductor device

Silicon carbide semiconductor device and manufacturing method therefor

Trench-gate type semiconductor device and manufacturing method ther...

Semiconductor device

Silicon-carbide semiconductor device and method for manufacturing t...

Silicon-carbide semiconductor device and manufacturing method therefor

Power semiconductor device

Trench-gate type semiconductor device and manufacturing method ther...

Silicon carbide semiconductor device and method of fabricating same

Patents Applicationslast 30 patents

SiC-MOSFET

SILICON CARBIDE SEMICONDUCTOR DEVICE, POWER CONVERTER, AND METHOD O...

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME

SILICON CARBIDE SEMICONDUCTOR DEVICE AND POWER CONVERSION APPARATUS

SILICON CARBIDE SEMICONDUCTOR DEVICE, POWER CONVERTER, AND METHOD O...

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THEREOF, AND POWER...

SILICON CARBIDE SEMICONDUCTOR DEVICE, MANUFACTURING METHOD THEREFOR...

SILICON CARBIDE SEMICONDUCTOR DEVICE

POWER SEMICONDUCTOR DEVICE

SILICON CARBIDE SEMICONDUCTOR DEVICE

SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

INSULATED GATE SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR...

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

TRENCH-GATE TYPE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THER...

SEMICONDUCTOR DEVICE

SILICON CARBIDE SEMICONDUCTOR DEVICE

SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

SILICON CARBIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR SAME

SILICON-CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING T...

TRENCH-GATE TYPE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THER...

INSULATED GATE SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR...

SILICON-CARBIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR

SILICON CARBIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR

SILICON-CARBIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

POWER SEMICONDUCTOR DEVICE

SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING SAME

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR