Yasuhiro Mochizuki

Person

Hitachi, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Plasma processing apparatus with a dielectric body in the waveguide
- Patent number 6,084,356
- Issue date Jul 4, 2000
- Hitachi, Ltd.
- Hirofumi Seki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Overvoltage self-protection semiconductor device, method of fabrica...
- Patent number 5,627,387
- Issue date May 6, 1997
- Hitachi, Ltd.
- Susumu Murakami
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate turn-off thyristor and power convertor using the same
- Patent number 5,459,338
- Issue date Oct 17, 1995
- Hitachi, Ltd.
- Yuji Takayanagi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatus for plasma treatment using electron cyclotron resonance
- Patent number 5,433,788
- Issue date Jul 18, 1995
- Hitachi, Ltd.
- Yasuhiro Mochizuki
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Thin film semiconductor device having inverted stagger structure, a...
- Patent number 5,294,811
- Issue date Mar 15, 1994
- Hitachi, Ltd.
- Takashi Aoyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Display device, manufacturing method thereof and display panel
- Patent number 5,247,375
- Issue date Sep 21, 1993
- Hitachi, Ltd.
- Yasuhiro Mochizuki
- G02 - OPTICS
Information Patent Grant
Dielectric isolated substrate and process for producing the same
- Patent number 5,233,216
- Issue date Aug 3, 1993
- Hitachi, Ltd.
- Yohsuke Inoue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Plasma operation apparatus
- Patent number 4,876,983
- Issue date Oct 31, 1989
- Hitachi, Ltd.
- Takuya Fukuda
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of manufacturing semiconductor device having aluminum diffus...
- Patent number 4,351,677
- Issue date Sep 28, 1982
- Hitachi, Ltd.
- Yasuhiro Mochizuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of selectively diffusing aluminium into a silicon semiconduc...
- Patent number 4,290,830
- Issue date Sep 22, 1981
- Hitachi, Ltd.
- Yasuhiro Mochizuki
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of fabricating a semiconductor device
- Patent number 4,219,373
- Issue date Aug 26, 1980
- Hitachi, Ltd.
- Yasuhiro Mochizuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vapor phase diffusion of aluminum with or without boron
- Patent number 4,193,826
- Issue date Mar 18, 1980
- Hitachi, Ltd.
- Yasuhiro Mochizuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of diffusing aluminum into silicon substrate for manufacturi...
- Patent number 4,154,632
- Issue date May 15, 1979
- Hitachi, Ltd.
- Yasuhiro Mochizuki
- H01 - BASIC ELECTRIC ELEMENTS

Yasuhiro Mochizuki

Person

Patents Grantslast 30 patents

Plasma processing apparatus with a dielectric body in the waveguide

Overvoltage self-protection semiconductor device, method of fabrica...

Gate turn-off thyristor and power convertor using the same

Apparatus for plasma treatment using electron cyclotron resonance

Thin film semiconductor device having inverted stagger structure, a...

Display device, manufacturing method thereof and display panel

Dielectric isolated substrate and process for producing the same

Plasma operation apparatus

Method of manufacturing semiconductor device having aluminum diffus...

Method of selectively diffusing aluminium into a silicon semiconduc...

Method of fabricating a semiconductor device

Vapor phase diffusion of aluminum with or without boron

Method of diffusing aluminum into silicon substrate for manufacturi...