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Yasuhisa Ushida
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Kiyosu-shi, JP
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Patents Grants
last 30 patents
Information
Patent Grant
Method for producing group III nitride semiconductor and template s...
Patent number
9,318,559
Issue date
Apr 19, 2016
Toyoda Gosei Co., Ltd.
Naoyuki Nakada
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method for producing group III nitride semiconductor and template s...
Patent number
9,196,687
Issue date
Nov 24, 2015
Toyoda Gosei Co., Ltd.
Naoyuki Nakada
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method for producing a group III nitride semiconductor light-emitti...
Patent number
8,980,657
Issue date
Mar 17, 2015
Toyoda Gosei Co., Ltd.
Shinya Boyama
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method for producing a group III nitride semiconductor light-emitti...
Patent number
8,945,965
Issue date
Feb 3, 2015
Toyoda Gosei Co., Ltd.
Naoyuki Nakada
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Group III nitride compound semiconductor light emitting element and...
Patent number
8,928,001
Issue date
Jan 6, 2015
Toyoda Gosei Co., Ltd.
Yoshiki Saito
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method for producing group III nitride semiconductor and template s...
Patent number
8,680,581
Issue date
Mar 25, 2014
Toyoda Gosei Co., Ltd.
Naoyuki Nakada
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Group III nitride semiconductor light-emitting device
Patent number
8,598,599
Issue date
Dec 3, 2013
Toyoda Gosei Co., Ltd.
Yoshiki Saito
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Light-emitting element
Patent number
8,546,836
Issue date
Oct 1, 2013
Toyoda Gosei Co., Ltd.
Masao Kamiya
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method for producing group III nitride-based compound semiconductor...
Patent number
8,518,806
Issue date
Aug 27, 2013
Toyoda Gosei Co., Ltd.
Koji Okuno
C30 - CRYSTAL GROWTH
Information
Patent Grant
Group III nitride-based compound semiconductor device
Patent number
7,948,061
Issue date
May 24, 2011
Toyoda Gosei Co., Ltd.
Yoshiki Saito
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method of forming a low temperature-grown buffer layer, a light emi...
Patent number
7,524,741
Issue date
Apr 28, 2009
Toyoda Gosei Co., Ltd.
Yasuhisa Ushida
H01 - BASIC ELECTRIC ELEMENTS
Patents Applications
last 30 patents
Information
Patent Application
METHOD FOR PRODUCING GROUP III NITRIDE SEMICONDUCTOR AND TEMPLATE S...
Publication number
20160020285
Publication date
Jan 21, 2016
Toyoda Gosei Co., Ltd.
Naoyuki Nakada
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
METHOD FOR PRODUCING GROUP III NITRIDE SEMICONDUCTOR AND TEMPLATE S...
Publication number
20140167222
Publication date
Jun 19, 2014
Toyoda Gosei Co., Ltd.
Naoyuki Nakada
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT
Publication number
20130328097
Publication date
Dec 12, 2013
Naoyuki NAKADA
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
GROUP III NITRIDE COMPOUND SEMICONDUCTOR LIGHT EMITTING ELEMENT AND...
Publication number
20130256687
Publication date
Oct 3, 2013
Toyoda Gosei Co., Ltd.
Yoshiki SAITO
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
METHOD FOR PRODUCING A GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTI...
Publication number
20130017639
Publication date
Jan 17, 2013
Toyoda Gosei Co., Ltd.
Shinya BOYAMA
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
METHOD FOR PRODUCING A GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTI...
Publication number
20120322189
Publication date
Dec 20, 2012
Toyoda Gosei Co., Ltd.
Naoyuki NAKADA
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Light-emitting element
Publication number
20120049236
Publication date
Mar 1, 2012
Toyoda Gosei Co., Ltd.
Masao Kamiya
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
METHOD FOR PRODUCING GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING...
Publication number
20110244610
Publication date
Oct 6, 2011
Toyoda Gosei Co., Ltd.
Yoshiki Saito
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Group III nitride semiconductor light-emitting device
Publication number
20110240956
Publication date
Oct 6, 2011
Toyoda Gosei Co., Ltd.
Yoshiki Saito
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
METHOD FOR PRODUCING GROUP III NITRIDE-BASED COMPOUND SEMICONDUCTOR...
Publication number
20100308437
Publication date
Dec 9, 2010
Koji Okuno
C30 - CRYSTAL GROWTH
Information
Patent Application
Group III nitride compound semiconductor light emitting element and...
Publication number
20100244042
Publication date
Sep 30, 2010
Toyoda Gosei Co., Ltd.
Yoshiki Saito
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Method for producing group III nitride semiconductor and template s...
Publication number
20100102360
Publication date
Apr 29, 2010
Toyoda Gosei Co., Ltd.
Naoyuki Nakada
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Group III nitride-based compound semiconductor device
Publication number
20090065900
Publication date
Mar 12, 2009
Toyoda Gosei Co., Ltd.
Yoshiki Saito
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Group III nitride-based compound semiconductor light emitting device
Publication number
20090039373
Publication date
Feb 12, 2009
Toyoda Gosei Co., Ltd.
Yoshiki Saito
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Method of forming a low temperature-grown buffer layer, light emitt...
Publication number
20060223287
Publication date
Oct 5, 2006
Toyoda Gosei Co., Ltd.
Yasuhisa Ushida
C30 - CRYSTAL GROWTH
Information
Patent Application
Process for fabrication of III nitride-based compound semiconductors
Publication number
20050076828
Publication date
Apr 14, 2005
Toyoda Gosei Co., Ltd.
Tetsuya Taki
C30 - CRYSTAL GROWTH