Yasuhito NARUSHIMA

Person

Tokyo, JP

People

Patents Grantslast 30 patents

Information Patent Grant
N-type silicon single crystal production method, n-type silicon sin...
- Patent number 12,252,803
- Issue date Mar 18, 2025
- Sumco Corporation
- Koichi Maegawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Low resistivity wafer
- Patent number 12,031,231
- Issue date Jul 9, 2024
- Sumco Corporation
- Yasuhito Narushima
- C30 - CRYSTAL GROWTH
Information Patent Grant
N-type silicon single crystal production method, n-type silicon sin...
- Patent number 11,702,760
- Issue date Jul 18, 2023
- Sumco Corporation
- Koichi Maegawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low resistivity wafer and method of manufacturing thereof
- Patent number 11,598,023
- Issue date Mar 7, 2023
- Sumco Corporation
- Yasuhito Narushima
- C30 - CRYSTAL GROWTH
Information Patent Grant
N-type silicon single crystal production method, n-type silicon sin...
- Patent number 11,377,755
- Issue date Jul 5, 2022
- Sumco Corporation
- Koichi Maegawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing silicon single crystal
- Patent number 11,242,617
- Issue date Feb 8, 2022
- Sumco Corporation
- Koichi Maegawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing silicon single crystal, heat shield, and singl...
- Patent number 11,047,065
- Issue date Jun 29, 2021
- Sumco Corporation
- Yasuhito Narushima
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon monocrystal production method
- Patent number 10,982,350
- Issue date Apr 20, 2021
- Sumco Corporation
- Yasuhito Narushima
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for manufacturing silicon single crystal, flow straightening...
- Patent number 10,916,425
- Issue date Feb 9, 2021
- Sumco Corporation
- Fukuo Ogawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing silicon single crystal
- Patent number 10,895,018
- Issue date Jan 19, 2021
- Sumco Corporation
- Yasuhito Narushima
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing single crystal
- Patent number 10,329,686
- Issue date Jun 25, 2019
- Sumco Corporation
- Yasuhito Narushima
- C30 - CRYSTAL GROWTH
Information Patent Grant
Producing method and apparatus of silicon single crystal, and silic...
- Patent number 10,294,583
- Issue date May 21, 2019
- Sumco Techxiv Corporation
- Yasuhito Narushima
- C30 - CRYSTAL GROWTH
Information Patent Grant
Manufacturing method of monocrystalline silicon and monocrystalline...
- Patent number 10,233,564
- Issue date Mar 19, 2019
- Sumco Corporation
- Yasuhito Narushima
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing single crystal, and method for producing silic...
- Patent number 10,233,562
- Issue date Mar 19, 2019
- Sumco Techxiv Corporation
- Yasuhito Narushima
- C30 - CRYSTAL GROWTH
Information Patent Grant
Manufacturing method of silicon monocrystal
- Patent number 10,227,710
- Issue date Mar 12, 2019
- Sumco Techxiv Corporation
- Yasuhito Narushima
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing a silicon single crystal doped with red phosph...
- Patent number 10,100,429
- Issue date Oct 16, 2018
- Sumco Corporation
- Yasuhito Narushima
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon single crystal pulling device and graphite member used therein
- Patent number 9,212,431
- Issue date Dec 15, 2015
- Sumco Techxiv Corporation
- Shinichi Kawazoe
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Processes for production of silicon ingot, silicon wafer and epitax...
- Patent number 9,074,298
- Issue date Jul 7, 2015
- Sumco Techxiv Corporation
- Shinichi Kawazoe
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of manufacturing monocrystal, flow straightening cylinder, a...
- Patent number 8,961,686
- Issue date Feb 24, 2015
- Sumco Techxiv Corporation
- Shinichi Kawazoe
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon single crystal pull-up apparatus that pulls a doped silicon...
- Patent number 8,920,561
- Issue date Dec 30, 2014
- Sumco Techxiv Corporation
- Yasuhito Narushima
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of producing single crystal silicon
- Patent number 8,888,911
- Issue date Nov 18, 2014
- Sumco Techxiv Corporation
- Masayuki Uto
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon single crystal pull-up apparatus and method of manufacturin...
- Patent number 8,871,023
- Issue date Oct 28, 2014
- Sumco Corporation
- Keiichi Takanashi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for manufacturing single crystal
- Patent number 8,852,340
- Issue date Oct 7, 2014
- Sumco Techxiv Corporation
- Yasuhito Narushima
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of manufacturing silicon single crystal
- Patent number 8,840,721
- Issue date Sep 23, 2014
- Sumco Techxiv Corporation
- Yasuhito Narushima
- C30 - CRYSTAL GROWTH
Information Patent Grant
Process for production of silicon single crystal, and highly doped...
- Patent number 8,747,551
- Issue date Jun 10, 2014
- Sumco Techxiv Corporation
- Shinichi Kawazoe
- C30 - CRYSTAL GROWTH
Information Patent Grant
Doping apparatus for simultaneously injecting two dopants into a se...
- Patent number 8,715,416
- Issue date May 6, 2014
- Sumco Techxiv Corporation
- Yasuhito Narushima
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method for manufacturing single crystal
- Patent number 8,580,032
- Issue date Nov 12, 2013
- Sumco Techxiv Corporation
- Yasuhito Narushima
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Process for production of silicon single crystal, and highly doped...
- Patent number 8,574,363
- Issue date Nov 5, 2013
- Sumco Techxiv Corporation
- Shinichi Kawazoe
- C30 - CRYSTAL GROWTH
Information Patent Grant
Manufacturing method for silicon single crystal
- Patent number 8,535,439
- Issue date Sep 17, 2013
- Sumco Techxiv Corporation
- Yasuhito Narushima
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon single crystal pull-up apparatus having a sliding sample tube
- Patent number 8,518,180
- Issue date Aug 27, 2013
- Sumco Techxiv Corporation
- Yasuhito Narushima
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC

Patents Applicationslast 30 patents

Information Patent Application
LOW RESISTIVITY WAFER
- Publication number 20240328034
- Publication date Oct 3, 2024
- SUMCO CORPORATION
- Yasuhito NARUSHIMA
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON SINGLE CRYSTAL GROWING METHOD
- Publication number 20240003044
- Publication date Jan 4, 2024
- SUMCO CORPORATION
- Takashi IZEKI
- C30 - CRYSTAL GROWTH
Information Patent Application
N-TYPE SILICON SINGLE CRYSTAL PRODUCTION METHOD, N-TYPE SILICON SIN...
- Publication number 20230295835
- Publication date Sep 21, 2023
- SUMCO CORPORATION
- Koichi MAEGAWA
- C30 - CRYSTAL GROWTH
Information Patent Application
LOW RESISTIVITY WAFER AND METHOD OF MANUFACTURING THEREOF
- Publication number 20230243066
- Publication date Aug 3, 2023
- SUMCO CORPORATION
- Yasuhito NARUSHIMA
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON WAFER AND EPITAXIAL SILICON WAFER
- Publication number 20230132859
- Publication date May 4, 2023
- SUMCO CORPORATION
- Kohtaroh KOGA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON WAFER AND EPITAXIAL SILICON WAFER
- Publication number 20230133472
- Publication date May 4, 2023
- SUMCO CORPORATION
- Kohtaroh KOGA
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON SINGLE CRYSTAL MANUFACTURING METHOD, SILICON SINGLE CRYSTAL...
- Publication number 20230031070
- Publication date Feb 2, 2023
- SUMCO CORPORATION
- Takashi IZEKI
- C30 - CRYSTAL GROWTH
Information Patent Application
LOW RESISTIVITY WAFER AND METHOD OF MANUFACTURING THEREOF
- Publication number 20210404087
- Publication date Dec 30, 2021
- SUMCO CORPORATION
- Yasuhito NARUSHIMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
N-TYPE SILICON SINGLE CRYSTAL PRODUCTION METHOD, N-TYPE SILICON SIN...
- Publication number 20200224329
- Publication date Jul 16, 2020
- SUMCO CORPORATION
- Koichi MAEGAWA
- C30 - CRYSTAL GROWTH
Information Patent Application
N-TYPE SILICON SINGLE CRYSTAL PRODUCTION METHOD, N-TYPE SILICON SIN...
- Publication number 20200141024
- Publication date May 7, 2020
- SUMCO CORPORATION
- Koichi MAEGAWA
- C30 - CRYSTAL GROWTH
Information Patent Application
SINGLE CRYSTAL SILICON PRODUCTION METHOD, EPITAXIAL SILICON WAFER P...
- Publication number 20200135460
- Publication date Apr 30, 2020
- SUMCO CORPORATION
- Yasuhito NARUSHIMA
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING SILICON SINGLE CRYSTAL, HEAT SHIELD, AND SINGL...
- Publication number 20200115821
- Publication date Apr 16, 2020
- SUMCO CORPORATION
- Yasuhito NARUSHIMA
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING SILICON SINGLE CRYSTAL
- Publication number 20200087814
- Publication date Mar 19, 2020
- SUMCO CORPORATION
- Koichi MAEGAWA
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR MANUFACTURING SILICON SINGLE CRYSTAL, FLOW STRAIGHTENING...
- Publication number 20200027732
- Publication date Jan 23, 2020
- SUMCO CORPORATION
- Fukuo OGAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PRODUCING SILICON SINGLE CRYSTAL
- Publication number 20190249331
- Publication date Aug 15, 2019
- SUMCO CORPORATION
- Yasuhito NARUSHIMA
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON MONOCRYSTAL PRODUCTION METHOD
- Publication number 20190186042
- Publication date Jun 20, 2019
- SUMCO CORPORATION
- Yasuhito NARUSHIMA
- C30 - CRYSTAL GROWTH
Information Patent Application
MANUFACTURING METHOD OF MONOCRYSTALLINE SILICON AND MONOCRYSTALLINE...
- Publication number 20180094360
- Publication date Apr 5, 2018
- SUMCO CORPORATION
- Yasuhito NARUSHIMA
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING SINGLE CRYSTAL
- Publication number 20170327966
- Publication date Nov 16, 2017
- SUMCO CORPORATION
- Yasuhito NARUSHIMA
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING SINGLE CRYSTAL AND METHOD FOR PRODUCING SILICO...
- Publication number 20170283980
- Publication date Oct 5, 2017
- SUMCO CORPORATION
- Yasuhito NARUSHIMA
- C30 - CRYSTAL GROWTH
Information Patent Application
MANUFACTURING METHOD OF SILICON MONOCRYSTAL
- Publication number 20170029975
- Publication date Feb 2, 2017
- SUMCO TECHXIV CORPORATION
- Yasuhito NARUSHIMA
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING SINGLE CRYSTAL, AND METHOD FOR PRODUCING SILIC...
- Publication number 20160102418
- Publication date Apr 14, 2016
- SUMCO TECHXIV CORPORATION
- Yasuhito NARUSHIMA
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR MANUFACTURING SINGLE CRYSTAL
- Publication number 20140033967
- Publication date Feb 6, 2014
- SUMCO TECHXIV CORPORATION
- Yasuhito NARUSHIMA
- C30 - CRYSTAL GROWTH
Information Patent Application
PROCESS FOR PRODUCTION OF SILICON SINGLE CRYSTAL, AND HIGHLY DOPED...
- Publication number 20140020617
- Publication date Jan 23, 2014
- SUMCO TECHXIV CORPORATION
- Shinichi KAWAZOE
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON SINGLE CRYSTAL PULL-UP APPARATUS AND METHOD OF MANUFACTURIN...
- Publication number 20110259260
- Publication date Oct 27, 2011
- SUMCO CORPORATION
- Keiichi TAKANASHI
- C30 - CRYSTAL GROWTH
Information Patent Application
PROCESSES FOR PRODUCTION OF SILICON INGOT, SILICON WAFER AND EPITAX...
- Publication number 20110140241
- Publication date Jun 16, 2011
- SUMCO TECHXIV CORPORATION
- Shinichi Kawazoe
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON SINGLE CRYSTAL PULL-UP APPARATUS
- Publication number 20110132257
- Publication date Jun 9, 2011
- SUMCO TECHXIV CORPORATION
- Yasuhito Narushima
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON SINGLE CRYSTAL PULL-UP APPARATUS
- Publication number 20110120367
- Publication date May 26, 2011
- SUMCO TECHXIV CORPORATION
- Yasuhito Narushima
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF MANUFACTURING SILICON SINGLE CRYSTAL
- Publication number 20110114011
- Publication date May 19, 2011
- SUMCO CORPORATION
- Yasuhito NARUSHIMA
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF PRODUCING SINGLE CRYSTAL SILICON
- Publication number 20110056428
- Publication date Mar 10, 2011
- SUMCO CORPORATION
- Masayuki Uto
- C30 - CRYSTAL GROWTH
Information Patent Application
PROCESS FOR PRODUCTION OF SILICON SINGLE CRYSTAL, AND HIGHLY DOPED...
- Publication number 20110049438
- Publication date Mar 3, 2011
- Shinichi Kawazone
- C30 - CRYSTAL GROWTH

Yasuhito NARUSHIMA

Person

Patents Grantslast 30 patents

N-type silicon single crystal production method, n-type silicon sin...

Low resistivity wafer

N-type silicon single crystal production method, n-type silicon sin...

Low resistivity wafer and method of manufacturing thereof

N-type silicon single crystal production method, n-type silicon sin...

Method for producing silicon single crystal

Method for producing silicon single crystal, heat shield, and singl...

Silicon monocrystal production method

Method for manufacturing silicon single crystal, flow straightening...

Method for producing silicon single crystal

Method for producing single crystal

Producing method and apparatus of silicon single crystal, and silic...

Manufacturing method of monocrystalline silicon and monocrystalline...

Method for producing single crystal, and method for producing silic...

Manufacturing method of silicon monocrystal

Method for producing a silicon single crystal doped with red phosph...

Silicon single crystal pulling device and graphite member used therein

Processes for production of silicon ingot, silicon wafer and epitax...

Method of manufacturing monocrystal, flow straightening cylinder, a...

Silicon single crystal pull-up apparatus that pulls a doped silicon...

Method of producing single crystal silicon

Silicon single crystal pull-up apparatus and method of manufacturin...

Method for manufacturing single crystal

Method of manufacturing silicon single crystal

Process for production of silicon single crystal, and highly doped...

Doping apparatus for simultaneously injecting two dopants into a se...

Method for manufacturing single crystal

Process for production of silicon single crystal, and highly doped...

Manufacturing method for silicon single crystal

Silicon single crystal pull-up apparatus having a sliding sample tube

Patents Applicationslast 30 patents

LOW RESISTIVITY WAFER

SILICON SINGLE CRYSTAL GROWING METHOD

N-TYPE SILICON SINGLE CRYSTAL PRODUCTION METHOD, N-TYPE SILICON SIN...

LOW RESISTIVITY WAFER AND METHOD OF MANUFACTURING THEREOF

SILICON WAFER AND EPITAXIAL SILICON WAFER

SILICON WAFER AND EPITAXIAL SILICON WAFER

SILICON SINGLE CRYSTAL MANUFACTURING METHOD, SILICON SINGLE CRYSTAL...

LOW RESISTIVITY WAFER AND METHOD OF MANUFACTURING THEREOF

N-TYPE SILICON SINGLE CRYSTAL PRODUCTION METHOD, N-TYPE SILICON SIN...

N-TYPE SILICON SINGLE CRYSTAL PRODUCTION METHOD, N-TYPE SILICON SIN...

SINGLE CRYSTAL SILICON PRODUCTION METHOD, EPITAXIAL SILICON WAFER P...

METHOD FOR PRODUCING SILICON SINGLE CRYSTAL, HEAT SHIELD, AND SINGL...

METHOD FOR PRODUCING SILICON SINGLE CRYSTAL

METHOD FOR MANUFACTURING SILICON SINGLE CRYSTAL, FLOW STRAIGHTENING...

METHOD FOR PRODUCING SILICON SINGLE CRYSTAL

SILICON MONOCRYSTAL PRODUCTION METHOD

MANUFACTURING METHOD OF MONOCRYSTALLINE SILICON AND MONOCRYSTALLINE...

METHOD FOR PRODUCING SINGLE CRYSTAL

METHOD FOR PRODUCING SINGLE CRYSTAL AND METHOD FOR PRODUCING SILICO...

MANUFACTURING METHOD OF SILICON MONOCRYSTAL

METHOD FOR PRODUCING SINGLE CRYSTAL, AND METHOD FOR PRODUCING SILIC...

METHOD FOR MANUFACTURING SINGLE CRYSTAL

PROCESS FOR PRODUCTION OF SILICON SINGLE CRYSTAL, AND HIGHLY DOPED...

SILICON SINGLE CRYSTAL PULL-UP APPARATUS AND METHOD OF MANUFACTURIN...

PROCESSES FOR PRODUCTION OF SILICON INGOT, SILICON WAFER AND EPITAX...

SILICON SINGLE CRYSTAL PULL-UP APPARATUS

SILICON SINGLE CRYSTAL PULL-UP APPARATUS

METHOD OF MANUFACTURING SILICON SINGLE CRYSTAL

METHOD OF PRODUCING SINGLE CRYSTAL SILICON

PROCESS FOR PRODUCTION OF SILICON SINGLE CRYSTAL, AND HIGHLY DOPED...