Yasumasa Watanabe

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Matsumoto City, JP

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Patents Grantslast 30 patents

Information Patent Grant
Level shift circuit and semiconductor device thereof
- Patent number 7,982,524
- Issue date Jul 19, 2011
- Fuji Electric Co., Ltd.
- Yuichi Harada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SOI lateral semiconductor device and method of manufacturing the same
- Patent number 7,476,942
- Issue date Jan 13, 2009
- Fuji Electric Device Technology Co., Ltd.
- Yasumasa Watanabe
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
MOS TYPE SEMICONDUCTOR DEVICE
- Publication number 20090309157
- Publication date Dec 17, 2009
- Fuji Electric Device Technology Co., LTD.
- Yasumasa WATANABE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LEVEL SHIFT CIRCUIT AND SEMICONDUCTOR DEVICE THEREOF
- Publication number 20090085117
- Publication date Apr 2, 2009
- Fuji Electric Device Technology Co., LTD.
- Yuichi HARADA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOI LATERAL SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20070235804
- Publication date Oct 11, 2007
- Fuji Electric Device Technology Co., LTD.
- Yasumasa Watanabe
- H01 - BASIC ELECTRIC ELEMENTS