Yasunobu Kodaira

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Tokyo, JP

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Patents Grantslast 30 patents

Information Patent Grant
Gate structure of semiconductor memory
- Patent number 6,046,484
- Issue date Apr 4, 2000
- Kabushiki Kaisha Toshiba
- Yasunobu Kodaira
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing semiconductor device having a metallic sil...
- Patent number 5,238,873
- Issue date Aug 24, 1993
- Kabushiki Kaisha Toshiba
- Masayoshi Higashizono
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing bipolar transistor with self-aligned base r...
- Patent number 5,213,988
- Issue date May 25, 1993
- Kabushiki Kaisha Toshiba
- Tomohiro Yamauchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing bipolar transistor by implanting intrinsic...
- Patent number 5,126,278
- Issue date Jun 30, 1992
- Kabushiki Kaisha Toshiba
- Yasunobu Kodaira
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a bipolar CMOS device
- Patent number 5,096,843
- Issue date Mar 17, 1992
- Kabushiki Kaisha Toshiba
- Yasunobu Kodaira
- H01 - BASIC ELECTRIC ELEMENTS