Yasuo Kitou

Person

Okazaki, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Silicon carbide single crystal and method for producing silicon car...
- Patent number 10,253,431
- Issue date Apr 9, 2019
- Denso Corporation
- Hiroyuki Kondo
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Method of manufacturing silicon carbide single crystal
- Patent number 8,980,003
- Issue date Mar 17, 2015
- Denso Corporation
- Hiroki Watanabe
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Device for manufacturing sic single crystal and method for the same
- Patent number 8,591,654
- Issue date Nov 26, 2013
- Denso Corporation
- Yasuo Kitou
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Manufacturing method of silicon carbide single crystal
- Patent number 8,518,809
- Issue date Aug 27, 2013
- Denso Corporation
- Hiroki Watanabe
- C30 - CRYSTAL GROWTH
Information Patent Grant
SiC single crystal substrate, SiC single crystal epitaxial wafer, a...
- Patent number 8,470,091
- Issue date Jun 25, 2013
- Denso Corporation
- Yasuo Kitou
- C30 - CRYSTAL GROWTH
Information Patent Grant
Manufacturing equipment of SiC single crystal and method for manufa...
- Patent number 7,314,523
- Issue date Jan 1, 2008
- Denso Corporation
- Kouki Futatsuyama
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Equipment and method for manufacturing silicon carbide single crystal
- Patent number 7,217,323
- Issue date May 15, 2007
- Denso Corporation
- Naohiro Sugiyama
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Semiconductor substrate and method for straightening warp of semico...
- Patent number 5,952,679
- Issue date Sep 14, 1999
- Denso Corporation
- Yasuo Kitou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of producing single crystals and a seed crystal used in the...
- Patent number 5,944,890
- Issue date Aug 31, 1999
- Denso Corporation
- Yasuo Kitou
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
SILICON CARBIDE SINGLE CRYSTAL AND METHOD FOR PRODUCING SILICON CAR...
- Publication number 20150361586
- Publication date Dec 17, 2015
- Denso Corporation
- Hiroyuki KONDO
- C30 - CRYSTAL GROWTH
Information Patent Application
MANUFACTURING METHOD OF MAGNETIC REFRIGERATION MATERIAL
- Publication number 20140127071
- Publication date May 8, 2014
- DENSO CORPORATION
- Tomonori Fujinaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURING METHOD OF SILICON CARBIDE SINGLE CRYSTAL
- Publication number 20120142173
- Publication date Jun 7, 2012
- DENSO CORPORATION
- Hiroki WATANABE
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF MANUFACTURING SILICON CARBIDE SUBSTRATE
- Publication number 20110203513
- Publication date Aug 25, 2011
- DENSO CORPORATION
- Hiroki WATANABE
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR FORMING PERIODIC STRUCTURE AND FUEL INJECTION SYSTEM HAV...
- Publication number 20110147493
- Publication date Jun 23, 2011
- DENSO CORPORATION
- Yoshihito MITSUOKA
- B23 - MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR
Information Patent Application
Manufacturing device for silicon carbide single crystal
- Publication number 20100307417
- Publication date Dec 9, 2010
- DENSO CORPORATION
- Jun Kojima
- C30 - CRYSTAL GROWTH
Information Patent Application
SiC single crystal substrate, SiC single crystal epitaxial wafer, a...
- Publication number 20100200866
- Publication date Aug 12, 2010
- DENSO CORPORATION
- Yasuo Kitou
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL
- Publication number 20100199910
- Publication date Aug 12, 2010
- DENSO CORPORATION
- Hiroki WATANABE
- C30 - CRYSTAL GROWTH
Information Patent Application
Device for manufacturing sic single crystal and method for the same
- Publication number 20090107394
- Publication date Apr 30, 2009
- DENSO CORPORATION
- Yasuo Kitou
- C30 - CRYSTAL GROWTH
Information Patent Application
Manufacturing equipment of SiC Single crystal and method for manufa...
- Publication number 20060042540
- Publication date Mar 2, 2006
- DENSO Corporation
- Kouki Futatsuyama
- C30 - CRYSTAL GROWTH
Information Patent Application
Equipment and method for manufacturing silicon carbide single crystal
- Publication number 20040194694
- Publication date Oct 7, 2004
- DENSO Corporation
- Naohiro Sugiyama
- C30 - CRYSTAL GROWTH

Yasuo Kitou

Person

Patents Grantslast 30 patents

Silicon carbide single crystal and method for producing silicon car...

Method of manufacturing silicon carbide single crystal

Device for manufacturing sic single crystal and method for the same

Manufacturing method of silicon carbide single crystal

SiC single crystal substrate, SiC single crystal epitaxial wafer, a...

Manufacturing equipment of SiC single crystal and method for manufa...

Equipment and method for manufacturing silicon carbide single crystal

Semiconductor substrate and method for straightening warp of semico...

Method of producing single crystals and a seed crystal used in the...

Patents Applicationslast 30 patents

SILICON CARBIDE SINGLE CRYSTAL AND METHOD FOR PRODUCING SILICON CAR...

MANUFACTURING METHOD OF MAGNETIC REFRIGERATION MATERIAL

MANUFACTURING METHOD OF SILICON CARBIDE SINGLE CRYSTAL

METHOD OF MANUFACTURING SILICON CARBIDE SUBSTRATE

METHOD FOR FORMING PERIODIC STRUCTURE AND FUEL INJECTION SYSTEM HAV...

Manufacturing device for silicon carbide single crystal

SiC single crystal substrate, SiC single crystal epitaxial wafer, a...

METHOD OF MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL

Device for manufacturing sic single crystal and method for the same

Manufacturing equipment of SiC Single crystal and method for manufa...

Equipment and method for manufacturing silicon carbide single crystal