Yasuo Ohno

Person

Tokyo, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Group III nitride semiconductor device of field effect transistor t...
- Patent number 6,765,241
- Issue date Jul 20, 2004
- NEC Corporation
- Yasuo Ohno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hetero-junction field effect transistor having an intermediate layer
- Patent number 6,552,373
- Issue date Apr 22, 2003
- NEC Corporation
- Yuji Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with schottky electrode having high schottky b...
- Patent number 6,492,669
- Issue date Dec 10, 2002
- NEC Corporation
- Tatsuo Nakayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor with barrier layer to prevent avalanche bre...
- Patent number 6,476,431
- Issue date Nov 5, 2002
- NEC Corporation
- Yasuo Ohno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 6,465,814
- Issue date Oct 15, 2002
- NEC Corporation
- Kensuke Kasahara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having drain and gate electrodes formed to lie...
- Patent number 6,441,391
- Issue date Aug 27, 2002
- NEC Corporation
- Yasuo Ohno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device with sidewall metal la...
- Patent number 6,440,822
- Issue date Aug 27, 2002
- NEC Corporation
- Nobuyuki Hayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Compound semiconductor field effect transistor
- Patent number 6,373,082
- Issue date Apr 16, 2002
- NEC Corporation
- Yasuo Ohno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-effect transistor and method for manufacturing the field effe...
- Patent number 6,278,144
- Issue date Aug 21, 2001
- NEC Corporation
- Kazuaki Kunihiro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Compound semiconductor device and method of manufacturing the same
- Patent number 6,180,968
- Issue date Jan 30, 2001
- NEC Corporation
- Kensuke Kasahara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Compound semiconductor field-effect transistor with improved curren...
- Patent number 6,121,641
- Issue date Sep 19, 2000
- NEC Corporation
- Yasuo Ohno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of evaluating the surface state and the interface trap of a...
- Patent number 6,075,263
- Issue date Jun 13, 2000
- NEC Corporation
- Yuji Takahashi
- G01 - MEASURING TESTING
Information Patent Grant
Field effect transistor with stabilized threshold voltage
- Patent number 5,949,096
- Issue date Sep 7, 1999
- NEC Corporation
- Satoru Ohkubo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a field-effect transistor having difference in c...
- Patent number 5,891,757
- Issue date Apr 6, 1999
- NEC Corporation
- Yasuo Ohno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Switching speed fluctuation detecting apparatus for logic circuit a...
- Patent number 5,619,146
- Issue date Apr 8, 1997
- NEC Corporation
- Masahiro Fujii
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Heterojunction field effect transistor (HJFET) having an improved f...
- Patent number 5,389,802
- Issue date Feb 14, 1995
- NEC Corporation
- Yasuo Ohno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor
- Patent number 4,831,422
- Issue date May 16, 1989
- NEC Corporation
- Yasuo Ohno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage integrated semiconductor devices using a thermoplastic...
- Patent number 4,530,001
- Issue date Jul 16, 1985
- Oki Electric Industry Co., Ltd.
- Haruo Mori
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Semiconductor device
- Publication number 20030151064
- Publication date Aug 14, 2003
- Yasuo Ohno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device
- Publication number 20020047113
- Publication date Apr 25, 2002
- NEC Corporation
- Yasuo Ohno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of manufacturing semiconductor device with sidewall metal la...
- Publication number 20020048889
- Publication date Apr 25, 2002
- NEC Corporation
- Nobuyuki Hayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device
- Publication number 20020017648
- Publication date Feb 14, 2002
- Kensuke Kasahara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device with schottky electrode having high schottky b...
- Publication number 20020017696
- Publication date Feb 14, 2002
- Tatsuo Nakayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Field-effect transistor and method for manufacturing the field effe...
- Publication number 20010042872
- Publication date Nov 22, 2001
- Kazuaki Kunihiro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Hetero-junction field effect transistor having an intermediate layer
- Publication number 20010040247
- Publication date Nov 15, 2001
- Yuji Ando
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Group III nitride semiconductor device of field effect transistor t...

Hetero-junction field effect transistor having an intermediate layer

Semiconductor device with schottky electrode having high schottky b...

Field effect transistor with barrier layer to prevent avalanche bre...

Semiconductor device

Semiconductor device having drain and gate electrodes formed to lie...

Method of manufacturing semiconductor device with sidewall metal la...

Compound semiconductor field effect transistor

Field-effect transistor and method for manufacturing the field effe...

Compound semiconductor device and method of manufacturing the same

Compound semiconductor field-effect transistor with improved curren...

Method of evaluating the surface state and the interface trap of a...

Field effect transistor with stabilized threshold voltage

Method for forming a field-effect transistor having difference in c...

Switching speed fluctuation detecting apparatus for logic circuit a...

Heterojunction field effect transistor (HJFET) having an improved f...

Field effect transistor

High voltage integrated semiconductor devices using a thermoplastic...

Patents Applicationslast 30 patents

Semiconductor device

Semiconductor device

Method of manufacturing semiconductor device with sidewall metal la...

Semiconductor device

Semiconductor device with schottky electrode having high schottky b...

Field-effect transistor and method for manufacturing the field effe...

Hetero-junction field effect transistor having an intermediate layer