Yasuyuki Sakaguchi

Person

Chiba-shi, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Silicon carbide epitaxial wafer and manufacturing method therefor
- Patent number 8,823,015
- Issue date Sep 2, 2014
- Showa Denko K.K.
- Kenji Momose
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 8,513,674
- Issue date Aug 20, 2013
- Showa Denko K.K.
- Akihiko Sugai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing silicon carbide single crystal
- Patent number 7,993,453
- Issue date Aug 9, 2011
- Showa Denko K.K.
- Naoki Oyanagi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon carbide single crystal and method and apparatus for produci...
- Patent number 7,371,281
- Issue date May 13, 2008
- Showa Denko K.K.
- Yasuyuki Sakaguchi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Ammonia for use in manufacture of GaN-type compound semiconductor a...
- Patent number 7,029,940
- Issue date Apr 18, 2006
- Showa Denko Kabushiki Kaisha
- Hideki Hayashida
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Ammonia for use in manufacture of GaN-type compound semiconductor a...
- Patent number 6,719,842
- Issue date Apr 13, 2004
- Showa Denko Kabushiki Kaisha
- Hideki Hayashida
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
A1GaInP light emitting diode
- Patent number 5,744,829
- Issue date Apr 28, 1998
- Showa Denko K.K.
- Shigetaka Murasato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor light emitting diode
- Patent number 5,656,829
- Issue date Aug 12, 1997
- Showa Denko K.K.
- Yasuyuki Sakaguchi
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SILICON CARBIDE EPITAXIAL WAFER AND MANUFACTURING METHOD THEREFOR
- Publication number 20140339571
- Publication date Nov 20, 2014
- SHOWA DENKO K.K.
- Kenji Momose
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE
- Publication number 20130224954
- Publication date Aug 29, 2013
- SHOWA DENKO K.K.
- Yasuyuki Sakaguchi
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE EPITAXIAL WAFER AND MANUFACTURING METHOD THEREFOR
- Publication number 20120146056
- Publication date Jun 14, 2012
- Showa Denko K.K.
- Kenji Momose
- C30 - CRYSTAL GROWTH
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20110233563
- Publication date Sep 29, 2011
- Showa Denko K.K.
- Akihiko Sugai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE
- Publication number 20110183113
- Publication date Jul 28, 2011
- SHOWA DENKO K.K.
- Yasuyuki Sakaguchi
- C30 - CRYSTAL GROWTH
Information Patent Application
WATER-BASED POLISHING SLURRY FOR POLISHING SILICON CARBIDE SINGLE C...
- Publication number 20100092366
- Publication date Apr 15, 2010
- Showa Denko K.K.
- Hisao Kogoi
- C30 - CRYSTAL GROWTH
Information Patent Application
PROCESS FOR PRODUCING SILICON CARBIDE SINGLE CRYSTAL
- Publication number 20100028240
- Publication date Feb 4, 2010
- Tomohiro Shonai
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING SILICON CARBIDE SINGLE CRYSTAL
- Publication number 20090184327
- Publication date Jul 23, 2009
- Showa Denko K.K.
- Naoki Oyanagi
- C30 - CRYSTAL GROWTH
Information Patent Application
Silicon carbide single crystal and method and apparatus for produci...
- Publication number 20060144324
- Publication date Jul 6, 2006
- Yasuyuki Sakaguchi
- C30 - CRYSTAL GROWTH
Information Patent Application
Ammonia for use in manufacture of GaN-type compound semiconductor a...
- Publication number 20040192048
- Publication date Sep 30, 2004
- Showa Denko K.K.
- Hideki Hayashida
- C30 - CRYSTAL GROWTH
Information Patent Application
AMMONIA FOR USE IN MANUFACTURE OF GAN-TYPE COMPOUND SEMICONDUCTOR A...
- Publication number 20030033973
- Publication date Feb 20, 2003
- HIDEKI HAYASHIDA
- C01 - INORGANIC CHEMISTRY

Yasuyuki Sakaguchi

Person

Patents Grantslast 30 patents

Silicon carbide epitaxial wafer and manufacturing method therefor

Semiconductor device and method of manufacturing the same

Method for producing silicon carbide single crystal

Silicon carbide single crystal and method and apparatus for produci...

Ammonia for use in manufacture of GaN-type compound semiconductor a...

Ammonia for use in manufacture of GaN-type compound semiconductor a...

A1GaInP light emitting diode

Semiconductor light emitting diode

Patents Applicationslast 30 patents

SILICON CARBIDE EPITAXIAL WAFER AND MANUFACTURING METHOD THEREFOR

SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE

SILICON CARBIDE EPITAXIAL WAFER AND MANUFACTURING METHOD THEREFOR

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE

WATER-BASED POLISHING SLURRY FOR POLISHING SILICON CARBIDE SINGLE C...

PROCESS FOR PRODUCING SILICON CARBIDE SINGLE CRYSTAL

METHOD FOR PRODUCING SILICON CARBIDE SINGLE CRYSTAL

Silicon carbide single crystal and method and apparatus for produci...

Ammonia for use in manufacture of GaN-type compound semiconductor a...

AMMONIA FOR USE IN MANUFACTURE OF GAN-TYPE COMPOUND SEMICONDUCTOR A...