Yawara Kaneko

Person

Tokyo, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Hologram recording medium and method for manufacturing same
- Patent number 7,800,802
- Issue date Sep 21, 2010
- Optware Corporation
- Yawara Kaneko
- G11 - INFORMATION STORAGE
Information Patent Grant
III-nitride semiconductor light emitting device having a silver p-c...
- Patent number 7,262,436
- Issue date Aug 28, 2007
- Philips Lumileds Lighting Company, LLC
- You Kondoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor light emitting device having a silver p-contact
- Patent number 6,900,472
- Issue date May 31, 2005
- LumiLeds Lighting U.S., LLC
- You Kondoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor layer structure and a nitride semiconductor l...
- Patent number 6,829,273
- Issue date Dec 7, 2004
- Agilent Technologies, Inc.
- Hiroshi Amano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for performing photolithography
- Patent number 6,696,223
- Issue date Feb 24, 2004
- Agilent Technologies, Inc.
- Tetsuya Hidaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor device
- Patent number 6,690,700
- Issue date Feb 10, 2004
- Agilent Technologies, Inc.
- Tetsuya Takeuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a semiconductor light-emitting device
- Patent number 6,258,614
- Issue date Jul 10, 2001
- LumiLeds Lighting, U.S., LLC
- Yawara Kaneko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making P-type group III-nitride semiconductor device havi...
- Patent number 6,238,945
- Issue date May 29, 2001
- Agilent Technologies, Inc.
- Yawara Kaneko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor light emitting device having a silver p-contact
- Patent number 6,194,743
- Issue date Feb 27, 2001
- Agilent Technologies, Inc.
- You Kondoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
P-type group III-nitride semiconductor device
- Patent number 6,150,672
- Issue date Nov 21, 2000
- Agilent Technologies
- Yawara Kaneko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Buried reflectors for light emitters in epitaxial material and meth...
- Patent number 6,046,465
- Issue date Apr 4, 2000
- Hewlett-Packard Company
- Shih-Yuan Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for cleaning a semiconductor surface
- Patent number 5,919,715
- Issue date Jul 6, 1999
- Hewlett-Packard Company
- Tetsuya Tekeuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gas-phase etching and regrowth method for Group III-nitride crystals
- Patent number 5,814,239
- Issue date Sep 29, 1998
- Hewlett-Packard Company
- Yawara Kaneko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for etching compound solid state material
- Patent number 5,683,596
- Issue date Nov 4, 1997
- Hewlett-Packard Company
- Yawara Kaneko
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Hologram Recording Medium and Method for Manufacturing Same
- Publication number 20080316555
- Publication date Dec 25, 2008
- Yawara Kaneko
- G11 - INFORMATION STORAGE
Information Patent Application
III-Nitride semiconductor light emitting device having a silver p-c...
- Publication number 20050179051
- Publication date Aug 18, 2005
- You Kondoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR LAYER STRUCTURE AND A NITRIDE SEMICONDUCTOR L...
- Publication number 20040213309
- Publication date Oct 28, 2004
- Hiroshi Amano
- B82 - NANO-TECHNOLOGY
Information Patent Application
Nitride semiconductor layer structure and a nitride semiconductor l...
- Publication number 20020094002
- Publication date Jul 18, 2002
- Hiroshi Amano
- B82 - NANO-TECHNOLOGY
Information Patent Application
Method for performing photolithography
- Publication number 20020001779
- Publication date Jan 3, 2002
- Tetsuya Hidaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Nitride semiconductor device
- Publication number 20010038656
- Publication date Nov 8, 2001
- Tetsuya Takeuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor light emitting device having a silver p-contact
- Publication number 20010015442
- Publication date Aug 23, 2001
- You Kondoh
- H01 - BASIC ELECTRIC ELEMENTS

Yawara Kaneko

Person

Patents Grantslast 30 patents

Hologram recording medium and method for manufacturing same

III-nitride semiconductor light emitting device having a silver p-c...

Semiconductor light emitting device having a silver p-contact

Nitride semiconductor layer structure and a nitride semiconductor l...

Method for performing photolithography

Nitride semiconductor device

Method for manufacturing a semiconductor light-emitting device

Method of making P-type group III-nitride semiconductor device havi...

Nitride semiconductor light emitting device having a silver p-contact

P-type group III-nitride semiconductor device

Buried reflectors for light emitters in epitaxial material and meth...

Method for cleaning a semiconductor surface

Gas-phase etching and regrowth method for Group III-nitride crystals

Method for etching compound solid state material

Patents Applicationslast 30 patents

Hologram Recording Medium and Method for Manufacturing Same

III-Nitride semiconductor light emitting device having a silver p-c...

NITRIDE SEMICONDUCTOR LAYER STRUCTURE AND A NITRIDE SEMICONDUCTOR L...

Nitride semiconductor layer structure and a nitride semiconductor l...

Method for performing photolithography

Nitride semiconductor device

Semiconductor light emitting device having a silver p-contact