Ye LU

Person

San Diego, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Multi-gate high electron mobility transistors (HEMTs) employing tun...
- Patent number 11,855,198
- Issue date Dec 26, 2023
- QUALCOMM Incorporated
- Chenjie Tang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Parallel processing of a convolutional layer of a neural network wi...
- Patent number 11,562,205
- Issue date Jan 24, 2023
- QUALCOMM Incorporated
- Zhongze Wang
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Memory cell for dot product operation in compute-in-memory chip
- Patent number 11,500,960
- Issue date Nov 15, 2022
- QUALCOMM Incorporated
- Zhongze Wang
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Multi-bit compute-in-memory (CIM) arrays employing bit cell circuit...
- Patent number 11,487,507
- Issue date Nov 1, 2022
- QUALCOMM Incorporated
- Ye Lu
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Field effect transistor (FET) comprising inner spacers and voids be...
- Patent number 11,411,092
- Issue date Aug 9, 2022
- Junjing Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with superlattice fin
- Patent number 11,380,685
- Issue date Jul 5, 2022
- QUALCOMM Incorporated
- Junjing Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Back-end-of-line integrated metal-insulator-metal capacitor
- Patent number 11,302,773
- Issue date Apr 12, 2022
- QUALCOMM Incorporated
- Ye Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional (3D), vertically-integrated field-effect transist...
- Patent number 11,296,083
- Issue date Apr 5, 2022
- QUALCOMM Incorporated
- Ye Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Air gap underneath passive devices
- Patent number 11,289,365
- Issue date Mar 29, 2022
- QUALCOMM Incorporated
- Junjing Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal-oxide-metal capacitor from subtractive back-end-of-line scheme
- Patent number 11,239,307
- Issue date Feb 1, 2022
- QUALCOMM Incorporated
- John Jianhong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around devices with reduced parasitic capacitance
- Patent number 11,189,617
- Issue date Nov 30, 2021
- QUALCOMM Incorporated
- Peijie Feng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor with insulator
- Patent number 11,164,952
- Issue date Nov 2, 2021
- QUALCOMM Incorporated
- Ye Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal-on-metal capacitor
- Patent number 11,004,784
- Issue date May 11, 2021
- QUALCOMM Incorporated
- Haitao Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process-invariant delay cell
- Patent number 10,972,068
- Issue date Apr 6, 2021
- QUALCOMM Incorporated
- Chao Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated device comprising memory bitcells comprising shared prel...
- Patent number 10,964,380
- Issue date Mar 30, 2021
- QUALCOMM Incorporated
- Zhongze Wang
- G11 - INFORMATION STORAGE
Information Patent Grant
Compute-in-memory bit cell
- Patent number 10,964,356
- Issue date Mar 30, 2021
- QUALCOMM Incorporated
- Zhongze Wang
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Enhanced active and passive devices for radio frequency (RF) proces...
- Patent number 10,930,730
- Issue date Feb 23, 2021
- QUALCOMM Incorporated
- Ye Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Inductor/transformer with closed ring
- Patent number 10,896,949
- Issue date Jan 19, 2021
- QUALCOMM Incorporated
- Haitao Cheng
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Guard ring frequency tuning
- Patent number 10,861,793
- Issue date Dec 8, 2020
- QUALCOMM Incorporated
- Haitao Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit with metal gate having dielectric portion over i...
- Patent number 10,756,085
- Issue date Aug 25, 2020
- QUALCOMM Incorporated
- Ye Lu
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Controlling dimensions of a negative capacitance layer of a gate st...
- Patent number 10,714,582
- Issue date Jul 14, 2020
- QUALCOMM Incorporated
- Bin Yang
- G11 - INFORMATION STORAGE
Information Patent Grant
Finger metal-oxide-metal (FMOM) capacitor
- Patent number 10,686,031
- Issue date Jun 16, 2020
- QUALCOMM Incorporated
- Peijie Feng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor with fluorinated graphene spacer
- Patent number 10,665,678
- Issue date May 26, 2020
- QUALCOMM Incorporated
- Ye Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Co-wound resistor
- Patent number 10,665,370
- Issue date May 26, 2020
- QUALCOMM Incorporated
- Haitao Cheng
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Metal-oxide-metal capacitor with improved alignment and reduced cap...
- Patent number 10,651,268
- Issue date May 12, 2020
- QUALCOMM Incorporated
- Haitao Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor with low resistivity carbon alloy
- Patent number 10,636,789
- Issue date Apr 28, 2020
- QUALCOMM Incorporated
- Ye Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Via-based vertical capacitor and resistor structures
- Patent number 10,629,523
- Issue date Apr 21, 2020
- QUALCOMM Incorporated
- Chao Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked resistor-capacitor delay cell
- Patent number 10,629,590
- Issue date Apr 21, 2020
- QUALCOMM Incorporated
- Ye Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Well doping for metal oxide semiconductor (MOS) varactor
- Patent number 10,622,491
- Issue date Apr 14, 2020
- QUALCOMM Incorporated
- Chuan-Hsing Chen
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Grant
Finger metal-on-metal capacitor containing negative capacitance mat...
- Patent number 10,600,569
- Issue date Mar 24, 2020
- QUALCOMM Incorporated
- Ye Lu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
MULTI-CHANNEL GATE-ALL-AROUND HIGH-ELECTRON-MOBILITY TRANSISTOR
- Publication number 20220131013
- Publication date Apr 28, 2022
- QUALCOMM Incorporated
- Chenjie TANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH SUPERLATTICE FIN
- Publication number 20220108983
- Publication date Apr 7, 2022
- QUALCOMM Incorporated
- Junjing BAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR (FET) COMPRISING INNER SPACERS AND VOIDS BE...
- Publication number 20210351276
- Publication date Nov 11, 2021
- QUALCOMM Incorporated
- Junjing BAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-BIT COMPUTE-IN-MEMORY (CIM) ARRAYS EMPLOYING BIT CELL CIRCUIT...
- Publication number 20210349689
- Publication date Nov 11, 2021
- QUALCOMM Incorporated
- Ye Lu
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
METAL-OXIDE-METAL CAPACITOR FROM SUBTRACTIVE BACK-END-OF-LINE SCHEME
- Publication number 20210343830
- Publication date Nov 4, 2021
- QUALCOMM Incorporated
- John Jianhong ZHU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-GATE HIGH ELECTRON MOBILITY TRANSISTORS (HEMTs) EMPLOYING TUN...
- Publication number 20210320197
- Publication date Oct 14, 2021
- QUALCOMM Incorporated
- Chenjie TANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HYBRID BACK-END-OF-LINE (BEOL) DIELECTRIC FOR HIGH CAPACITANCE DENS...
- Publication number 20210320059
- Publication date Oct 14, 2021
- QUALCOMM Incorporated
- Ye LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTORS IN A LAYERED ARRANGEMENT
- Publication number 20210313326
- Publication date Oct 7, 2021
- QUALCOMM Incorporated
- Kwanyong LIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL (3D), VERTICALLY-INTEGRATED FIELD-EFFECT TRANSIST...
- Publication number 20210280582
- Publication date Sep 9, 2021
- QUALCOMM Incorporated
- Ye Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR WITH INSULATOR
- Publication number 20210280684
- Publication date Sep 9, 2021
- QUALCOMM Incorporated
- Ye LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FLEXIBLE GAA NANOSHEET HEIGHT AND CHANNEL MATERIALS
- Publication number 20210233909
- Publication date Jul 29, 2021
- QUALCOMM Incorporated
- Junjing BAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND DEVICES WITH REDUCED PARASITIC CAPACITANCE
- Publication number 20210233911
- Publication date Jul 29, 2021
- QUALCOMM Incorporated
- Peijie FENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
AIR GAP UNDERNEATH PASSIVE DEVICES
- Publication number 20210143050
- Publication date May 13, 2021
- QUALCOMM Incorporated
- Junjing BAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY CELL FOR DOT PRODUCT OPERATION IN COMPUTE-IN-MEMORY CHIP
- Publication number 20210124793
- Publication date Apr 29, 2021
- QUALCOMM Incorporated
- Zhongze WANG
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
PARALLEL PROCESSING OF A CONVOLUTIONAL LAYER OF A NEURAL NETWORK WI...
- Publication number 20210089865
- Publication date Mar 25, 2021
- QUALCOMM Incorporated
- Zhongze WANG
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
ON-DIE ELECTROSTATIC DISCHARGE PROTECTION
- Publication number 20210057404
- Publication date Feb 25, 2021
- QUALCOMM Incorporated
- Kai LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR (MOS) CAPACITOR
- Publication number 20210036168
- Publication date Feb 4, 2021
- QUALCOMM Incorporated
- Ye LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPUTE-IN-MEMORY BIT CELL
- Publication number 20210005230
- Publication date Jan 7, 2021
- QUALCOMM Incorporated
- Zhongze WANG
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
Nanosheet Transistor Stack
- Publication number 20210005604
- Publication date Jan 7, 2021
- QUALCOMM Incorporated
- Lixin GE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GAPS IN TRANSISTOR GATE METAL
- Publication number 20200234999
- Publication date Jul 23, 2020
- QUALCOMM Incorporated
- Ye LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTORS WITH LOW CONTACT RESISTANCE AND METHOD OF FABRICATING T...
- Publication number 20200152739
- Publication date May 14, 2020
- QUALCOMM Incorporated
- Bin Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY IMPLEMENTED USING NEGATIVE CAPACITANCE MATERIAL
- Publication number 20200126995
- Publication date Apr 23, 2020
- QUALCOMM Incorporated
- Lixin Ge
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL-ON-METAL CAPACITOR
- Publication number 20200118921
- Publication date Apr 16, 2020
- QUALCOMM Incorporated
- Haitao Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BACK-END-OF-LINE INTEGRATED METAL-INSULATOR-METAL CAPACITOR
- Publication number 20200111865
- Publication date Apr 9, 2020
- QUALCOMM Incorporated
- Ye LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MIDDLE-OF-LINE (MOL) COMPLEMENTARY POWER RAIL(S) IN INTEGRATED CIRC...
- Publication number 20200105670
- Publication date Apr 2, 2020
- QUALCOMM Incorporated
- John Jianhong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VIA-BASED VERTICAL CAPACITOR AND RESISTOR STRUCTURES
- Publication number 20200083158
- Publication date Mar 12, 2020
- QUALCOMM Incorporated
- Chao Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED RESISTOR-CAPACITOR DELAY CELL
- Publication number 20200075582
- Publication date Mar 5, 2020
- QUALCOMM Incorporated
- Ye Lu
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
HIGH PERFORMANCE THIN FILM TRANSISTOR WITH NEGATIVE INDEX MATERIAL
- Publication number 20200066858
- Publication date Feb 27, 2020
- QUALCOMM Incorporated
- Junjing BAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INDUCTOR/TRANSFORMER WITH CLOSED RING
- Publication number 20200066829
- Publication date Feb 27, 2020
- QUALCOMM Incorporated
- Haitao Cheng
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
CO-WOUND RESISTOR
- Publication number 20200051718
- Publication date Feb 13, 2020
- QUALCOMM Incorporated
- Haitao CHENG
- G06 - COMPUTING CALCULATING COUNTING

Person

Patents Grantslast 30 patents

Multi-gate high electron mobility transistors (HEMTs) employing tun...

Parallel processing of a convolutional layer of a neural network wi...

Memory cell for dot product operation in compute-in-memory chip

Multi-bit compute-in-memory (CIM) arrays employing bit cell circuit...

Field effect transistor (FET) comprising inner spacers and voids be...

Semiconductor device with superlattice fin

Back-end-of-line integrated metal-insulator-metal capacitor

Three-dimensional (3D), vertically-integrated field-effect transist...

Air gap underneath passive devices

Metal-oxide-metal capacitor from subtractive back-end-of-line scheme

Gate-all-around devices with reduced parasitic capacitance

Transistor with insulator

Metal-on-metal capacitor

Process-invariant delay cell

Integrated device comprising memory bitcells comprising shared prel...

Compute-in-memory bit cell

Enhanced active and passive devices for radio frequency (RF) proces...

Inductor/transformer with closed ring

Guard ring frequency tuning

Integrated circuit with metal gate having dielectric portion over i...

Controlling dimensions of a negative capacitance layer of a gate st...

Finger metal-oxide-metal (FMOM) capacitor

Transistor with fluorinated graphene spacer

Co-wound resistor

Metal-oxide-metal capacitor with improved alignment and reduced cap...

Transistor with low resistivity carbon alloy

Via-based vertical capacitor and resistor structures

Stacked resistor-capacitor delay cell

Well doping for metal oxide semiconductor (MOS) varactor

Finger metal-on-metal capacitor containing negative capacitance mat...

Patents Applicationslast 30 patents

MULTI-CHANNEL GATE-ALL-AROUND HIGH-ELECTRON-MOBILITY TRANSISTOR

SEMICONDUCTOR DEVICE WITH SUPERLATTICE FIN

FIELD EFFECT TRANSISTOR (FET) COMPRISING INNER SPACERS AND VOIDS BE...

MULTI-BIT COMPUTE-IN-MEMORY (CIM) ARRAYS EMPLOYING BIT CELL CIRCUIT...

METAL-OXIDE-METAL CAPACITOR FROM SUBTRACTIVE BACK-END-OF-LINE SCHEME

MULTI-GATE HIGH ELECTRON MOBILITY TRANSISTORS (HEMTs) EMPLOYING TUN...

HYBRID BACK-END-OF-LINE (BEOL) DIELECTRIC FOR HIGH CAPACITANCE DENS...

TRANSISTORS IN A LAYERED ARRANGEMENT

THREE-DIMENSIONAL (3D), VERTICALLY-INTEGRATED FIELD-EFFECT TRANSIST...

TRANSISTOR WITH INSULATOR

FLEXIBLE GAA NANOSHEET HEIGHT AND CHANNEL MATERIALS

GATE-ALL-AROUND DEVICES WITH REDUCED PARASITIC CAPACITANCE

AIR GAP UNDERNEATH PASSIVE DEVICES

MEMORY CELL FOR DOT PRODUCT OPERATION IN COMPUTE-IN-MEMORY CHIP

PARALLEL PROCESSING OF A CONVOLUTIONAL LAYER OF A NEURAL NETWORK WI...

ON-DIE ELECTROSTATIC DISCHARGE PROTECTION

COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR (MOS) CAPACITOR

COMPUTE-IN-MEMORY BIT CELL

Nanosheet Transistor Stack

GAPS IN TRANSISTOR GATE METAL

TRANSISTORS WITH LOW CONTACT RESISTANCE AND METHOD OF FABRICATING T...

MEMORY IMPLEMENTED USING NEGATIVE CAPACITANCE MATERIAL

METAL-ON-METAL CAPACITOR

BACK-END-OF-LINE INTEGRATED METAL-INSULATOR-METAL CAPACITOR

MIDDLE-OF-LINE (MOL) COMPLEMENTARY POWER RAIL(S) IN INTEGRATED CIRC...

VIA-BASED VERTICAL CAPACITOR AND RESISTOR STRUCTURES

STACKED RESISTOR-CAPACITOR DELAY CELL

HIGH PERFORMANCE THIN FILM TRANSISTOR WITH NEGATIVE INDEX MATERIAL

INDUCTOR/TRANSFORMER WITH CLOSED RING

CO-WOUND RESISTOR