Yee-Chia Yeo

Person

Singapore, SG

People

Patents Grantslast 30 patents

Information Patent Grant
Automotive network switch with anomaly detection
- Patent number 11,479,263
- Issue date Oct 25, 2022
- MARVELL ASIA PTE. LTD.
- Xiaofan Ruan
- B60 - VEHICLES IN GENERAL
Information Patent Grant
Semiconductor device having semiconductor alloy layer adjacent a ga...
- Patent number 11,380,762
- Issue date Jul 5, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chien-Chao Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with silicided source/drain region
- Patent number 10,818,754
- Issue date Oct 27, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chien-Chao Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cobalt silicidation process for substrates comprised with a silicon...
- Patent number 10,446,646
- Issue date Oct 15, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chien-Chao Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cobalt silicidation process for substrates comprised with a silicon...
- Patent number 9,673,280
- Issue date Jun 6, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chien-Chao Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Devices having a semiconductor material that is semimetal in bulk a...
- Patent number 9,564,493
- Issue date Feb 7, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jean-Pierre Colinge
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tunneling transistor
- Patent number 8,933,435
- Issue date Jan 13, 2015
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Kian Hui Goh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Isolation structure for strained channel transistors
- Patent number 8,569,146
- Issue date Oct 29, 2013
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chih-Hsin Ko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory component having an electrical contact free of a metal layer
- Patent number 8,541,767
- Issue date Sep 24, 2013
- National University of Singapore
- Weiwei Lina Fang
- G11 - INFORMATION STORAGE
Information Patent Grant
Isolation spacer for thin SOI devices
- Patent number 8,084,305
- Issue date Dec 27, 2011
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih-Hsin Ko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strained channel transistor structure with lattice-mismatched zone...
- Patent number 8,062,946
- Issue date Nov 22, 2011
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yee-Chia Yeo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multiple-gate transistor structure and method for fabricating
- Patent number 7,948,037
- Issue date May 24, 2011
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hao-Yu Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation of strained Si channel and Si1-xGex source/drain structur...
- Patent number 7,892,905
- Issue date Feb 22, 2011
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Kuang Kian Ong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strained silicon-on-insulator transistors with mesa isolation
- Patent number 7,892,901
- Issue date Feb 22, 2011
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yee-Chia Yeo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SRAM cell having stepped boundary regions and methods of fabrication
- Patent number 7,807,546
- Issue date Oct 5, 2010
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wen-Chin Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multiple-gate transistor structure
- Patent number 7,728,360
- Issue date Jun 1, 2010
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hao-Yu Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicide gate transistors and method of manufacture
- Patent number 7,633,127
- Issue date Dec 15, 2009
- Taiwan Semiconductor Manufacturing Company
- Cheng-Kuo Wen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor nano-wire devices and methods of fabrication
- Patent number 7,452,778
- Issue date Nov 18, 2008
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hung-Wei Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High performance semiconductor devices fabricated with strain-induc...
- Patent number 7,394,136
- Issue date Jul 1, 2008
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chung-Hu Ke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor with a strained region and method of manufacture
- Patent number 7,335,929
- Issue date Feb 26, 2008
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Chieh Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a wafer with strained channel layers for incr...
- Patent number 7,312,136
- Issue date Dec 25, 2007
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chien-Chao Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit structure and method of fabrication
- Patent number 7,271,431
- Issue date Sep 18, 2007
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chuan-Yi Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contacts to semiconductor fin devices
- Patent number 7,262,086
- Issue date Aug 28, 2007
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yee-Chia Yeo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strain balanced structure with a tensile strained silicon channel a...
- Patent number 7,238,989
- Issue date Jul 3, 2007
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yee-Chia Yeo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device with a strained channel
- Patent number 7,238,581
- Issue date Jul 3, 2007
- Chartered Semiconductor Manufacturing Ltd.
- King Jien Chui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate electrode for a semiconductor fin device
- Patent number 7,176,092
- Issue date Feb 13, 2007
- Taiwan Semiconductor Manufacturing Company
- Yee-Chia Yeo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strained silicon-on-insulator transistors with mesa isolation
- Patent number 7,157,774
- Issue date Jan 2, 2007
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yee-Chia Yeo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon-on-insulator ULSI devices with multiple silicon film thickn...
- Patent number 7,141,459
- Issue date Nov 28, 2006
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Fu-Liang Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contacts to semiconductor fin devices
- Patent number 7,105,894
- Issue date Sep 12, 2006
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yee-Chia Yeo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SRAM cell having stepped boundary regions and methods of fabrication
- Patent number 7,105,908
- Issue date Sep 12, 2006
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wen-Chin Lee
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD OF MANUFACTURING A FINFET BY IMPLANTING A DIELECTRIC WITH A...
- Publication number 20240145596
- Publication date May 2, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Su-Hao Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD
- Publication number 20240021618
- Publication date Jan 18, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chih-Yun Chin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Automotive network switch with anomaly detection
- Publication number 20200406910
- Publication date Dec 31, 2020
- Marvell Asia Pte, Ltd.
- Xiaofan Ruan
- B60 - VEHICLES IN GENERAL
Information Patent Application
DEVICES HAVING A SILICON-GERMANIUM LAYER
- Publication number 20200044030
- Publication date Feb 6, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chien-Chao Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH SILICIDED SOURCE/DRAIN REGION
- Publication number 20180197955
- Publication date Jul 12, 2018
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chien-Chao Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Cobalt Silicidation Process for Substrates Comprised with a Silicon...
- Publication number 20170271449
- Publication date Sep 21, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chien-Chao Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICES HAVING A SEMICONDUCTOR MATERIAL THAT IS SEMIMETAL IN BULK A...
- Publication number 20160268382
- Publication date Sep 15, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jean-Pierre Colinge
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Cobalt silicidation process for substrates comprised with a silicon...
- Publication number 20160240372
- Publication date Aug 18, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chien-Chao Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TUNNELING TRANSISTOR
- Publication number 20140175381
- Publication date Jun 26, 2014
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Kian Hui GOH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY COMPONENT AND A MEMORY CELL
- Publication number 20120267595
- Publication date Oct 25, 2012
- National University of Singapore and Agency for Science Technology and Research
- Weiwei Lina FANG
- G11 - INFORMATION STORAGE
Information Patent Application
ISOLATION STRUCTURE FOR STRAINED CHANNEL TRANSISTORS
- Publication number 20110117724
- Publication date May 19, 2011
- Taiwan Semiconductor Manufacturing Co., LTD
- Chih-Hsin KO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTIPLE-GATE TRANSISTOR STRUCTURE AND METHOD FOR FABRICATING
- Publication number 20100200923
- Publication date Aug 12, 2010
- Taiwan Semiconductor Manufacturing Co., LTD
- Hao-Yu Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ISOLATION SPACER FOR THIN SOI DEVICES
- Publication number 20080142888
- Publication date Jun 19, 2008
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih-Hsin KO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ISOLATION SPACER FOR THIN SOI DEVICES
- Publication number 20080145982
- Publication date Jun 19, 2008
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih-Hsin KO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Strained silicon-on-insulator transistors with mesa isolation
- Publication number 20070190702
- Publication date Aug 16, 2007
- Taiwan Semiconductor Manufacturing Company
- Yee-Chia Yeo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Cobalt silicidation process for substrates comprised with a silicon...
- Publication number 20070164369
- Publication date Jul 19, 2007
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chien-Chao Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Isolation structure for strained channel transistors
- Publication number 20070161206
- Publication date Jul 12, 2007
- Chih-Hsin Ko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gate electrode for a semiconductor fin device
- Publication number 20070111454
- Publication date May 17, 2007
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yee-Chia Yeo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Formation of strained Si channel and Si1-xGex source/drain structur...
- Publication number 20070032026
- Publication date Feb 8, 2007
- Chartered Semiconductor Manufacturing Ltd.
- Kuang Kian Ong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Dual gate electrode metal oxide semciconductor transistors
- Publication number 20070018259
- Publication date Jan 25, 2007
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chih-Hsin Ko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SRAM cell having stepped boundary regions and methods of fabrication
- Publication number 20060252227
- Publication date Nov 9, 2006
- Wen-Chin Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Contacts to semiconductor fin devices
- Publication number 20060244066
- Publication date Nov 2, 2006
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yee-Chia Yeo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicide Gate Transistors and Method of Manufacture
- Publication number 20060194399
- Publication date Aug 31, 2006
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Cheng-Kuo Wen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Transistor with a strained region and method of manufacture
- Publication number 20060081875
- Publication date Apr 20, 2006
- Chun-Chieh Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Isolation spacer for thin SOI devices
- Publication number 20060081928
- Publication date Apr 20, 2006
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih-Hsin Ko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of manufacturing a semiconductor device with a strained channel
- Publication number 20060030094
- Publication date Feb 9, 2006
- Chartered Semiconductor Manufacturing LTD.
- King Jien Chui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Isolation structure for strained channel transistors
- Publication number 20050285140
- Publication date Dec 29, 2005
- Chih-Hsin Ko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated circuit structure and method of fabrication
- Publication number 20050287779
- Publication date Dec 29, 2005
- Chuan-Yi Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor nano-wire devices and methods of fabrication
- Publication number 20050275010
- Publication date Dec 15, 2005
- Hung-Wei Chen
- B82 - NANO-TECHNOLOGY
Information Patent Application
Strain balanced structure with a tensile strained silicon channel a...
- Publication number 20050272188
- Publication date Dec 8, 2005
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yee-Chia Yeo
- H01 - BASIC ELECTRIC ELEMENTS

Yee-Chia Yeo

Person

Patents Grantslast 30 patents

Automotive network switch with anomaly detection

Semiconductor device having semiconductor alloy layer adjacent a ga...

Semiconductor device with silicided source/drain region

Cobalt silicidation process for substrates comprised with a silicon...

Cobalt silicidation process for substrates comprised with a silicon...

Devices having a semiconductor material that is semimetal in bulk a...

Tunneling transistor

Isolation structure for strained channel transistors

Memory component having an electrical contact free of a metal layer

Isolation spacer for thin SOI devices

Strained channel transistor structure with lattice-mismatched zone...

Multiple-gate transistor structure and method for fabricating

Formation of strained Si channel and Si1-xGex source/drain structur...

Strained silicon-on-insulator transistors with mesa isolation

SRAM cell having stepped boundary regions and methods of fabrication

Multiple-gate transistor structure

Silicide gate transistors and method of manufacture

Semiconductor nano-wire devices and methods of fabrication

High performance semiconductor devices fabricated with strain-induc...

Transistor with a strained region and method of manufacture

Method of fabricating a wafer with strained channel layers for incr...

Integrated circuit structure and method of fabrication

Contacts to semiconductor fin devices

Strain balanced structure with a tensile strained silicon channel a...

Method of manufacturing a semiconductor device with a strained channel

Gate electrode for a semiconductor fin device

Strained silicon-on-insulator transistors with mesa isolation

Silicon-on-insulator ULSI devices with multiple silicon film thickn...

Contacts to semiconductor fin devices

SRAM cell having stepped boundary regions and methods of fabrication

Patents Applicationslast 30 patents

METHOD OF MANUFACTURING A FINFET BY IMPLANTING A DIELECTRIC WITH A...

SEMICONDUCTOR DEVICE AND METHOD

Automotive network switch with anomaly detection

DEVICES HAVING A SILICON-GERMANIUM LAYER

SEMICONDUCTOR DEVICE WITH SILICIDED SOURCE/DRAIN REGION

Cobalt Silicidation Process for Substrates Comprised with a Silicon...

DEVICES HAVING A SEMICONDUCTOR MATERIAL THAT IS SEMIMETAL IN BULK A...

Cobalt silicidation process for substrates comprised with a silicon...

TUNNELING TRANSISTOR

MEMORY COMPONENT AND A MEMORY CELL

ISOLATION STRUCTURE FOR STRAINED CHANNEL TRANSISTORS

MULTIPLE-GATE TRANSISTOR STRUCTURE AND METHOD FOR FABRICATING

ISOLATION SPACER FOR THIN SOI DEVICES

ISOLATION SPACER FOR THIN SOI DEVICES

Strained silicon-on-insulator transistors with mesa isolation

Cobalt silicidation process for substrates comprised with a silicon...

Isolation structure for strained channel transistors

Gate electrode for a semiconductor fin device

Formation of strained Si channel and Si1-xGex source/drain structur...

Dual gate electrode metal oxide semciconductor transistors

SRAM cell having stepped boundary regions and methods of fabrication

Contacts to semiconductor fin devices

Silicide Gate Transistors and Method of Manufacture

Transistor with a strained region and method of manufacture

Isolation spacer for thin SOI devices

Method of manufacturing a semiconductor device with a strained channel

Isolation structure for strained channel transistors

Integrated circuit structure and method of fabrication

Semiconductor nano-wire devices and methods of fabrication

Strain balanced structure with a tensile strained silicon channel a...