Yee-Chia Yeo

Person

Albany, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Short channel effect suppression
- Patent number 10,141,310
- Issue date Nov 27, 2018
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Cheng-Yi Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Asymmetric source/drain depths
- Patent number 9,659,826
- Issue date May 23, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Cheng-Yi Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Asymmetric source/drain depths
- Patent number 9,515,071
- Issue date Dec 6, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Cheng-Yi Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Relaxed silicon germanium substrate with low defect density
- Patent number 8,564,018
- Issue date Oct 22, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun Chich Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Complementary metal oxide semiconductor transistor technology using...
- Patent number 7,659,587
- Issue date Feb 9, 2010
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yee-Chia Yeo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Relaxed silicon germanium substrate with low defect density
- Patent number 7,357,838
- Issue date Apr 15, 2008
- Taiwan Semiconductor Manufacturing Company
- Chun Chieh Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Complementary metal oxide semiconductor transistor technology using...
- Patent number 7,226,832
- Issue date Jun 5, 2007
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yee-Chia Yeo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOSFET device with a strained channel
- Patent number 7,202,139
- Issue date Apr 10, 2007
- Taiwan Semiconductor Manufacturing Company , Ltd.
- Yee-Chia Yeo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Complementary metal oxide semiconductor transistor technology using...
- Patent number 6,953,972
- Issue date Oct 11, 2005
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yee-Chia Yeo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Suppression of MOSFET gate leakage current
- Patent number 6,949,769
- Issue date Sep 27, 2005
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chenming Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Relaxed silicon germanium substrate with low defect density
- Patent number 6,878,610
- Issue date Apr 12, 2005
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun Chich Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Suppression of MOSFET gate leakage current
- Patent number 6,830,953
- Issue date Dec 14, 2004
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chenming Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor-on-insulator chip incorporating partially-depleted, f...
- Patent number 6,720,619
- Issue date Apr 13, 2004
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hao-Yu Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Complementary metal oxide semiconductor transistor technology using...
- Patent number 6,703,271
- Issue date Mar 9, 2004
- Taiwan Semiconductor Manufacturing Company
- Yee-Chia Yeo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a transistor with a strained channel
- Patent number 6,492,216
- Issue date Dec 10, 2002
- Taiwan Semiconductor Manufacturing Company
- Yee-Chia Yeo
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
ASYMMETRIC SOURCE/DRAIN DEPTHS
- Publication number 20170084498
- Publication date Mar 23, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Cheng-Yi Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ASYMMETRIC SOURCE/DRAIN DEPTHS
- Publication number 20160190136
- Publication date Jun 30, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Cheng-Yi Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SHORT CHANNEL EFFECT SUPPRESSION
- Publication number 20160181244
- Publication date Jun 23, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Cheng-Yi Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RELAXED SILICON GERMANIUM SUBSTRATE WITH LOW DEFECT DENSITY
- Publication number 20080142842
- Publication date Jun 19, 2008
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun Chich Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Complementary Metal Oxide Semiconductor Transistor Technology Using...
- Publication number 20070205468
- Publication date Sep 6, 2007
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yee-Chia Yeo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Complementary metal oxide semiconductor transistor technology using...
- Publication number 20060008958
- Publication date Jan 12, 2006
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yee-Chia Yeo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Relaxed silicon germanium substrate with low defect density
- Publication number 20050158971
- Publication date Jul 21, 2005
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun Chich Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Suppression of MOSFET gate leakage current
- Publication number 20050040404
- Publication date Feb 24, 2005
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chenming Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Complementary metal oxide semiconductor transistor technology using...
- Publication number 20050009263
- Publication date Jan 13, 2005
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY
- Yee-Chia Yeo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Mosfet device with a strained channel
- Publication number 20050003599
- Publication date Jan 6, 2005
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY
- Yee-Chia Yeo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Complementary metal oxide semiconductor transistor technology using...
- Publication number 20030162348
- Publication date Aug 28, 2003
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY
- Yee-Chia Yeo
- H01 - BASIC ELECTRIC ELEMENTS

Yee-Chia Yeo

Person

Patents Grantslast 30 patents

Short channel effect suppression

Asymmetric source/drain depths

Asymmetric source/drain depths

Relaxed silicon germanium substrate with low defect density

Complementary metal oxide semiconductor transistor technology using...

Relaxed silicon germanium substrate with low defect density

Complementary metal oxide semiconductor transistor technology using...

MOSFET device with a strained channel

Complementary metal oxide semiconductor transistor technology using...

Suppression of MOSFET gate leakage current

Relaxed silicon germanium substrate with low defect density

Suppression of MOSFET gate leakage current

Semiconductor-on-insulator chip incorporating partially-depleted, f...

Complementary metal oxide semiconductor transistor technology using...

Method of forming a transistor with a strained channel

Patents Applicationslast 30 patents

ASYMMETRIC SOURCE/DRAIN DEPTHS

ASYMMETRIC SOURCE/DRAIN DEPTHS

SHORT CHANNEL EFFECT SUPPRESSION

RELAXED SILICON GERMANIUM SUBSTRATE WITH LOW DEFECT DENSITY

Complementary Metal Oxide Semiconductor Transistor Technology Using...

Complementary metal oxide semiconductor transistor technology using...

Relaxed silicon germanium substrate with low defect density

Suppression of MOSFET gate leakage current

Complementary metal oxide semiconductor transistor technology using...

Mosfet device with a strained channel

Complementary metal oxide semiconductor transistor technology using...