Yen-Lung Li

Person

San Jose, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Column replacement with non-dedicated replacement columns
- Patent number 10,908,838
- Issue date Feb 2, 2021
- SanDisk Technologies LLC
- Dike Zhou
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Column skip inconsistency correction
- Patent number 10,726,940
- Issue date Jul 28, 2020
- SanDisk Technologies LLC
- Zhuojie Li
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Word-line pre-charging in power-on read operation to reduce program...
- Patent number 10,475,493
- Issue date Nov 12, 2019
- SanDisk Technologies LLC
- Manabu Sakai
- G11 - INFORMATION STORAGE
Information Patent Grant
Program-verify of select gate transistor with doped channel in NAND...
- Patent number 10,153,051
- Issue date Dec 11, 2018
- SanDisk Technologies LLC
- Hong-Yan Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Word line contact regions for three-dimensional non-volatile memory
- Patent number 10,115,440
- Issue date Oct 30, 2018
- SanDisk Technologies LLC
- Qui Nguyen
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Multi-VT sensing method by varying bit line voltage
- Patent number 9,922,719
- Issue date Mar 20, 2018
- SanDisk Technologies LLC
- Yen-Lung Li
- G11 - INFORMATION STORAGE
Information Patent Grant
Fast scan to detect bit line discharge time
- Patent number 9,892,791
- Issue date Feb 13, 2018
- SanDisk Technologies LLC
- Yen-Lung Li
- G11 - INFORMATION STORAGE
Information Patent Grant
Sense amplifier with program biasing and fast sensing
- Patent number 9,881,676
- Issue date Jan 30, 2018
- SanDisk Technologies LLC
- Jong Hak Yuh
- G11 - INFORMATION STORAGE
Information Patent Grant
Multi-state programming for non-volatile memory
- Patent number 9,595,317
- Issue date Mar 14, 2017
- SanDisk Technologies LLC
- Yen-Lung Li
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
COUPLING CAPACITANCE REDUCTION DURING PROGRAM VERIFY FOR PERFORMANC...
- Publication number 20210383879
- Publication date Dec 9, 2021
- SANDISK TECHNOLOGIES LLC
- Lei Lin
- G11 - INFORMATION STORAGE
Information Patent Application
COLUMN REPLACEMENT WITH NON-DEDICATED REPLACEMENT COLUMNS
- Publication number 20200097209
- Publication date Mar 26, 2020
- SanDisk Technologies LLC
- DIKE ZHOU
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
COLUMN SKIP INCONSISTENCY CORRECTION
- Publication number 20200082897
- Publication date Mar 12, 2020
- SANDISK TECHNOLOGIES LLC
- ZHUOJIE LI
- G11 - INFORMATION STORAGE
Information Patent Application
WORD-LINE PRE-CHARGING IN POWER-ON READ OPERATION TO REDUCE PROGRAM...
- Publication number 20190066789
- Publication date Feb 28, 2019
- SanDisk Technologies LLC
- Manabu Sakai
- G11 - INFORMATION STORAGE
Information Patent Application
WORD LINE CONTACT REGIONS FOR THREE-DIMENSIONAL NON-VOLATILE MEMORY
- Publication number 20180197586
- Publication date Jul 12, 2018
- SanDisk Technologies LLC
- Qui Nguyen
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
FAST SCAN TO DETECT BIT LINE DISCHARGE TIME
- Publication number 20160372200
- Publication date Dec 22, 2016
- SANDISK TECHNOLOGIES INC.
- Yen-Lung Li
- G11 - INFORMATION STORAGE
Information Patent Application
MULTI-VT SENSING METHOD BY VARYING BIT LINE VOLTAGE
- Publication number 20160358664
- Publication date Dec 8, 2016
- SANDISK TECHNOLOGIES INC.
- Yen-Lung Li
- G11 - INFORMATION STORAGE
Information Patent Application
MULTI-STATE PROGRAMMING FOR NON-VOLATILE MEMORY
- Publication number 20160351254
- Publication date Dec 1, 2016
- SANDISK TECHNOLOGIES INC.
- Yen-Lung Li
- G11 - INFORMATION STORAGE

Yen-Lung Li

Person

Patents Grantslast 30 patents

Column replacement with non-dedicated replacement columns

Column skip inconsistency correction

Word-line pre-charging in power-on read operation to reduce program...

Program-verify of select gate transistor with doped channel in NAND...

Word line contact regions for three-dimensional non-volatile memory

Multi-VT sensing method by varying bit line voltage

Fast scan to detect bit line discharge time

Sense amplifier with program biasing and fast sensing

Multi-state programming for non-volatile memory

Patents Applicationslast 30 patents

COUPLING CAPACITANCE REDUCTION DURING PROGRAM VERIFY FOR PERFORMANC...

COLUMN REPLACEMENT WITH NON-DEDICATED REPLACEMENT COLUMNS

COLUMN SKIP INCONSISTENCY CORRECTION

WORD-LINE PRE-CHARGING IN POWER-ON READ OPERATION TO REDUCE PROGRAM...

WORD LINE CONTACT REGIONS FOR THREE-DIMENSIONAL NON-VOLATILE MEMORY

FAST SCAN TO DETECT BIT LINE DISCHARGE TIME

MULTI-VT SENSING METHOD BY VARYING BIT LINE VOLTAGE

MULTI-STATE PROGRAMMING FOR NON-VOLATILE MEMORY