Yen-Ting Chiang

Person

Tainan City, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Bond pad structure with high via density
- Patent number 12,224,298
- Issue date Feb 11, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yu-Hsien Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Extra doped region for back-side deep trench isolation
- Patent number 12,211,876
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chun-Yuan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure
- Patent number 12,154,927
- Issue date Nov 26, 2024
- Taiwan Semiconductor Manufacturing Company Ltd.
- Yen-Ting Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Composite BSI structure and method of manufacturing the same
- Patent number 12,148,782
- Issue date Nov 19, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Wei Chuang Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Deep trench isolations and methods of forming the same
- Patent number 12,087,801
- Issue date Sep 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Cheng-Hsien Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multiple deep trench isolation (MDTI) structure for CMOS image sensor
- Patent number 11,984,465
- Issue date May 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Wei Chuang Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical gate field effect transistor
- Patent number 11,948,949
- Issue date Apr 2, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chun-Yuan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Composite BSI structure and method of manufacturing the same
- Patent number 11,791,357
- Issue date Oct 17, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Wei Chuang Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Extra doped region for back-side deep trench isolation
- Patent number 11,728,366
- Issue date Aug 15, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chun-Yuan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal reflector grounding for noise reduction in light detector
- Patent number 11,705,474
- Issue date Jul 18, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yen-Ting Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Image sensor having improved full well capacity and related method...
- Patent number 11,545,513
- Issue date Jan 3, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yu-Hung Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multiple deep trench isolation (MDTI) structure for CMOS image sensor
- Patent number 11,495,630
- Issue date Nov 8, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Wei Chuang Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing semiconductor image sensor device having d...
- Patent number 11,430,823
- Issue date Aug 30, 2022
- Taiwan Semiconductor Manufacturing Company Ltd.
- Yen-Ting Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical gate field effect transistor
- Patent number 11,404,460
- Issue date Aug 2, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chun-Yuan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and method of manufacturing the same
- Patent number 11,374,046
- Issue date Jun 28, 2022
- Taiwan Semiconductor Manufacturing Company Ltd.
- Sheng-Chan Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Extra doped region for back-side deep trench isolation
- Patent number 11,227,889
- Issue date Jan 18, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chun-Yuan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Deep trench isolations and methods of forming the same
- Patent number 11,217,621
- Issue date Jan 4, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Cheng-Hsien Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Composite bsi structure and method of manufacturing the same
- Patent number 11,211,419
- Issue date Dec 28, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Wei Chuang Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal reflector grounding for noise reduction in light detector
- Patent number 11,088,196
- Issue date Aug 10, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yen-Ting Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Image sensor having improved full well capacity and related method...
- Patent number 11,069,733
- Issue date Jul 20, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yu-Hung Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Image sensor having improved full well capacity and related method...
- Patent number 10,971,534
- Issue date Apr 6, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yu-Hung Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multiple deep trench isolation (MDTI) structure for CMOS image sensor
- Patent number 10,861,894
- Issue date Dec 8, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd
- Wei Chuang Wu
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Grant
Semiconductor image sensor device with deep trench isolations and m...
- Patent number 10,825,853
- Issue date Nov 3, 2020
- Taiwan Semiconductor Manufacturing Company Ltd.
- Yen-Ting Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming image sensor device structure with doping layer...
- Patent number 10,777,590
- Issue date Sep 15, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yen-Ting Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multiple deep trench isolation (MDTI) structure for CMOS image sensor
- Patent number 10,727,265
- Issue date Jul 28, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wei Chuang Wu
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Grant
Semiconductor structure and method of manufacturing the same
- Patent number 10,658,409
- Issue date May 19, 2020
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. U.
- Sheng-Chan Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Image sensor having improved full well capacity and related method...
- Patent number 10,658,410
- Issue date May 19, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yu-Hung Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Extra doped region for back-side deep trench isolation
- Patent number 10,510,789
- Issue date Dec 17, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chun-Yuan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Image sensor device structure with doping layer in light-sensing re...
- Patent number 10,475,828
- Issue date Nov 12, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yen-Ting Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multiple deep trench isolation (MDTI) structure for CMOS image sensor
- Patent number 10,461,109
- Issue date Oct 29, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wei Chuang Wu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
COMPOSITE BSI STRUCTURE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20240371904
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wei Chuang Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEEP TRENCH ISOLATIONS AND METHODS OF FORMING THE SAME
- Publication number 20240363671
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Cheng-Hsien Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL GATE FIELD EFFECT TRANSISTOR
- Publication number 20240204016
- Publication date Jun 20, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Yuan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPOSITE BSI STRUCTURE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20240021643
- Publication date Jan 18, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wei Chuang Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Image Sensor with Extension Pad
- Publication number 20230369380
- Publication date Nov 16, 2023
- TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Y.C. Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EXTRA DOPED REGION FOR BACK-SIDE DEEP TRENCH ISOLATION
- Publication number 20230335572
- Publication date Oct 19, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Yuan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ISOLATION STRUCTURE TO INCREASE IMAGE SENSOR PERFORMANCE
- Publication number 20230317757
- Publication date Oct 5, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yen-Ting Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IMAGE SENSOR HAVING AN IMPROVED STRUCTURE FOR SMALL PIXEL DESIGNS
- Publication number 20230307479
- Publication date Sep 28, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yen-Yu Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20220415935
- Publication date Dec 29, 2022
- Taiwan Semiconductor Manufacturing company Ltd.
- SHIH-HAN HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTIPLE DEEP TRENCH ISOLATION (MDTI) STRUCTURE FOR CMOS IMAGE SENSOR
- Publication number 20220384495
- Publication date Dec 1, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wei Chuang Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BOND PAD STRUCTURE WITH HIGH VIA DENSITY
- Publication number 20220367554
- Publication date Nov 17, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yu-Hsien Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL GATE FIELD EFFECT TRANSISTOR
- Publication number 20220352223
- Publication date Nov 3, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Yuan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE
- Publication number 20220352218
- Publication date Nov 3, 2022
- Taiwan Semiconductor Manufacturing company Ltd.
- YEN-TING CHIANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20220320155
- Publication date Oct 6, 2022
- Taiwan Semiconductor Manufacturing company Ltd.
- SHENG-CHAN LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Bonded Semiconductor Device And Method For Forming The Same
- Publication number 20220277127
- Publication date Sep 1, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shih-Han Huang
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
Deep Trench Isolations and Methods of Forming the Same
- Publication number 20220130888
- Publication date Apr 28, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Cheng-Hsien Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EXTRA DOPED REGION FOR BACK-SIDE DEEP TRENCH ISOLATION
- Publication number 20220059583
- Publication date Feb 24, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Yuan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPOSITE BSI STRUCTURE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20210366956
- Publication date Nov 25, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wei Chuang Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL REFLECTOR GROUNDING FOR NOISE REDUCTION IN LIGHT DETECTOR
- Publication number 20210313383
- Publication date Oct 7, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yen-Ting Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL GATE FIELD EFFECT TRANSISTOR
- Publication number 20210210534
- Publication date Jul 8, 2021
- Taiwan Semiconductor Manufacturing Co., LTD
- Chun-Yuan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IMAGE SENSOR HAVING IMPROVED FULL WELL CAPACITY AND RELATED METHOD...
- Publication number 20210183921
- Publication date Jun 17, 2021
- Taiwan Semiconductor Manufacturing Co., LTD
- Yu-Hung Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL REFLECTOR GROUNDING FOR NOISE REDUCTION IN LIGHT DETECTOR
- Publication number 20210151495
- Publication date May 20, 2021
- Taiwan Semiconductor Manufacturing Co., LTD
- Yen-Ting Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING SEMICONDUCTOR IMAGE SENSOR DEVICE
- Publication number 20210043664
- Publication date Feb 11, 2021
- Taiwan Semiconductor Manufacturing company Ltd.
- YEN-TING CHIANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTIPLE DEEP TRENCH ISOLATION (MDTI) STRUCTURE FOR CMOS IMAGE SENSOR
- Publication number 20200343281
- Publication date Oct 29, 2020
- Taiwan Semiconductor Manufacturing Co., LTD
- Wei Chuang Wu
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20200243582
- Publication date Jul 30, 2020
- Taiwan Semiconductor Manufacturing company Ltd.
- SHENG-CHAN LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IMAGE SENSOR HAVING IMPROVED FULL WELL CAPACITY AND RELATED METHOD...
- Publication number 20200212083
- Publication date Jul 2, 2020
- Taiwan Semiconductor Manufacturing Co., LTD
- Yu-Hung Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IMAGE SENSOR HAVING IMPROVED FULL WELL CAPACITY AND RELATED METHOD...
- Publication number 20200212082
- Publication date Jul 2, 2020
- Taiwan Semiconductor Manufacturing Co., LTD
- Yu-Hung Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IMAGE SENSOR HAVING IMPROVED FULL WELL CAPACITY AND RELATED METHOD...
- Publication number 20200066768
- Publication date Feb 27, 2020
- Taiwan Semiconductor Manufacturing Co., LTD
- Yu-Hung Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EXTRA DOPED REGION FOR BACK-SIDE DEEP TRENCH ISOLATION
- Publication number 20200066770
- Publication date Feb 27, 2020
- Taiwan Semiconductor Manufacturing Co., LTD
- Chun-Yuan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPOSITE BSI STRUCTURE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20200058684
- Publication date Feb 20, 2020
- Taiwan Semiconductor Manufacturing Co., LTD
- Wei Chuang Wu
- H01 - BASIC ELECTRIC ELEMENTS

Yen-Ting Chiang

Person

Patents Grantslast 30 patents

Bond pad structure with high via density

Extra doped region for back-side deep trench isolation

Semiconductor structure

Composite BSI structure and method of manufacturing the same

Deep trench isolations and methods of forming the same

Multiple deep trench isolation (MDTI) structure for CMOS image sensor

Vertical gate field effect transistor

Composite BSI structure and method of manufacturing the same

Extra doped region for back-side deep trench isolation

Metal reflector grounding for noise reduction in light detector

Image sensor having improved full well capacity and related method...

Multiple deep trench isolation (MDTI) structure for CMOS image sensor

Method for manufacturing semiconductor image sensor device having d...

Vertical gate field effect transistor

Semiconductor structure and method of manufacturing the same

Extra doped region for back-side deep trench isolation

Deep trench isolations and methods of forming the same

Composite bsi structure and method of manufacturing the same

Metal reflector grounding for noise reduction in light detector

Image sensor having improved full well capacity and related method...

Image sensor having improved full well capacity and related method...

Multiple deep trench isolation (MDTI) structure for CMOS image sensor

Semiconductor image sensor device with deep trench isolations and m...

Method for forming image sensor device structure with doping layer...

Multiple deep trench isolation (MDTI) structure for CMOS image sensor

Semiconductor structure and method of manufacturing the same

Image sensor having improved full well capacity and related method...

Extra doped region for back-side deep trench isolation

Image sensor device structure with doping layer in light-sensing re...

Multiple deep trench isolation (MDTI) structure for CMOS image sensor

Patents Applicationslast 30 patents

COMPOSITE BSI STRUCTURE AND METHOD OF MANUFACTURING THE SAME

DEEP TRENCH ISOLATIONS AND METHODS OF FORMING THE SAME

VERTICAL GATE FIELD EFFECT TRANSISTOR

COMPOSITE BSI STRUCTURE AND METHOD OF MANUFACTURING THE SAME

Image Sensor with Extension Pad

EXTRA DOPED REGION FOR BACK-SIDE DEEP TRENCH ISOLATION

ISOLATION STRUCTURE TO INCREASE IMAGE SENSOR PERFORMANCE

IMAGE SENSOR HAVING AN IMPROVED STRUCTURE FOR SMALL PIXEL DESIGNS

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

MULTIPLE DEEP TRENCH ISOLATION (MDTI) STRUCTURE FOR CMOS IMAGE SENSOR

BOND PAD STRUCTURE WITH HIGH VIA DENSITY

VERTICAL GATE FIELD EFFECT TRANSISTOR

SEMICONDUCTOR STRUCTURE

SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURING THE SAME

Bonded Semiconductor Device And Method For Forming The Same

Deep Trench Isolations and Methods of Forming the Same

EXTRA DOPED REGION FOR BACK-SIDE DEEP TRENCH ISOLATION

COMPOSITE BSI STRUCTURE AND METHOD OF MANUFACTURING THE SAME

METAL REFLECTOR GROUNDING FOR NOISE REDUCTION IN LIGHT DETECTOR

VERTICAL GATE FIELD EFFECT TRANSISTOR

IMAGE SENSOR HAVING IMPROVED FULL WELL CAPACITY AND RELATED METHOD...

METAL REFLECTOR GROUNDING FOR NOISE REDUCTION IN LIGHT DETECTOR

METHOD FOR MANUFACTURING SEMICONDUCTOR IMAGE SENSOR DEVICE

MULTIPLE DEEP TRENCH ISOLATION (MDTI) STRUCTURE FOR CMOS IMAGE SENSOR

SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURING THE SAME

IMAGE SENSOR HAVING IMPROVED FULL WELL CAPACITY AND RELATED METHOD...

IMAGE SENSOR HAVING IMPROVED FULL WELL CAPACITY AND RELATED METHOD...

IMAGE SENSOR HAVING IMPROVED FULL WELL CAPACITY AND RELATED METHOD...

EXTRA DOPED REGION FOR BACK-SIDE DEEP TRENCH ISOLATION

COMPOSITE BSI STRUCTURE AND METHOD OF MANUFACTURING THE SAME