Yeonchoo CHO

Person

Seongnam-si, KR

People

Patents Grantslast 30 patents

Information Patent Grant
Method of pre-treating substrate and method of directly forming gra...
- Patent number 12,217,958
- Issue date Feb 4, 2025
- Samsung Electronics Co., Ltd.
- Keunwook Shin
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Metal-to-semiconductor contact including a 2D crystal material layer
- Patent number 12,183,780
- Issue date Dec 31, 2024
- Samsung Electronics Co., Ltd.
- Yeonchoo Cho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming graphene
- Patent number 12,103,850
- Issue date Oct 1, 2024
- Samsung Electronics Co., Ltd.
- Van Luan Nguyen
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Semiconductor device including two-dimensional semiconductor material
- Patent number 12,062,697
- Issue date Aug 13, 2024
- Samsung Electronics Co., Ltd.
- Minhyun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including surface-treated semiconductor layer
- Patent number 12,046,656
- Issue date Jul 23, 2024
- Samsung Electronics Co., Ltd.
- Yeonchoo Cho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor including channel formed of 2D material
- Patent number 12,027,588
- Issue date Jul 2, 2024
- Samsung Electronics Co., Ltd.
- Minhyun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including graphene and method of manufacturing...
- Patent number 12,027,589
- Issue date Jul 2, 2024
- Samsung Electronics Co., Ltd.
- Keunwook Shin
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Vertical type transistor, inverter including the same, and vertical...
- Patent number 12,002,882
- Issue date Jun 4, 2024
- Samsung Electronics Co., Ltd.
- Minhyun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memristor and neuromorphic device comprising the same
- Patent number 11,985,910
- Issue date May 14, 2024
- Samsung Electronics Co., Ltd.
- Minhyun Lee
Information Patent Grant
Method of patterning two-dimensional material layer on substrate, a...
- Patent number 11,961,898
- Issue date Apr 16, 2024
- Samsung Electronics Co., Ltd.
- Van Luan Nguyen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of calculating thickness of graphene layer and method of mea...
- Patent number 11,906,291
- Issue date Feb 20, 2024
- Samsung Electronics Co., Ltd.
- Eunkyu Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming transition metal dichalcogenide thin film
- Patent number 11,881,399
- Issue date Jan 23, 2024
- Samsung Electronics Co., Ltd.
- Kyung-Eun Byun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Layer structure including diffusion barrier layer and method of man...
- Patent number 11,764,156
- Issue date Sep 19, 2023
- Samsung Electronics Co., Ltd.
- Hyunjae Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Interconnect structure having nanocrystalline graphene cap layer an...
- Patent number 11,682,622
- Issue date Jun 20, 2023
- Samsung Electronics Co., Ltd.
- Kyung-Eun Byun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Interconnect structure to reduce contact resistance, electronic dev...
- Patent number 11,626,502
- Issue date Apr 11, 2023
- Samsung Electronics Co., Ltd.
- Hyeonjin Shin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor including gate insulating layer formed of t...
- Patent number 11,588,034
- Issue date Feb 21, 2023
- Samsung Electronics Co., Ltd.
- Minhyun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming graphene
- Patent number 11,572,278
- Issue date Feb 7, 2023
- Samsung Electronics Co., Ltd.
- Hyeonjin Shin
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Vertical type transistor, inverter including the same, and vertical...
- Patent number 11,563,116
- Issue date Jan 24, 2023
- Samsung Electronics Co., Ltd.
- Minhyun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor including channel formed of 2D material
- Patent number 11,532,709
- Issue date Dec 20, 2022
- Samsung Electronics Co., Ltd.
- Minhyun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including two-dimensional semiconductor material
- Patent number 11,508,815
- Issue date Nov 22, 2022
- Samsung Electronics Co., Ltd.
- Minhyun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming transition metal dichalcogenide thin film
- Patent number 11,476,117
- Issue date Oct 18, 2022
- Samsung Electronics Co., Ltd.
- Kyung-Eun Byun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memristor and neuromorphic device comprising the same
- Patent number 11,374,171
- Issue date Jun 28, 2022
- Samsung Electronics Co., Ltd.
- Minhyun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Interconnect structure having nanocrystalline graphene cap layer an...
- Patent number 11,217,531
- Issue date Jan 4, 2022
- Samsung Electronics Co., Ltd.
- Kyung-Eun Byun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of directly growing carbon material on substrate
- Patent number 11,149,346
- Issue date Oct 19, 2021
- Samsung Electronics Co., Ltd.
- Changhyun Kim
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Hardmask composition and method of forming pattern using the hardma...
- Patent number 11,086,223
- Issue date Aug 10, 2021
- Samsung Electronics Co., Ltd.
- Hyeonjin Shin
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Grant
Layer structure including diffusion barrier layer and method of man...
- Patent number 11,088,077
- Issue date Aug 10, 2021
- Samsung Electronics Co., Ltd.
- Hyunjae Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Interconnect structure and electronic device employing the same
- Patent number 11,069,619
- Issue date Jul 20, 2021
- Samsung Electronics Co., Ltd.
- Seunggeol Nam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Interconnect structure having nanocrystalline graphene cap layer an...
- Patent number 10,971,451
- Issue date Apr 6, 2021
- Samsung Electronics Co., Ltd.
- Kyung-Eun Byun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming nanocrystalline graphene, and device including na...
- Patent number 10,850,985
- Issue date Dec 1, 2020
- Samsung Electronics Co., Ltd.
- Alum Jung
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Semiconductor device including graphene and method of manufacturing...
- Patent number 10,840,338
- Issue date Nov 17, 2020
- Samsung Electronics Co., Ltd.
- Keunwook Shin
- C01 - INORGANIC CHEMISTRY

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING TWO-DIMENSIONAL SEMICONDUCTOR MATERIAL
- Publication number 20240363689
- Publication date Oct 31, 2024
- Samsung Electronics Co., Ltd.
- Minhyun LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF CALCULATING THICKNESS OF GRAPHENE LAYER AND METHOD OF MEA...
- Publication number 20240151522
- Publication date May 9, 2024
- Samsung Electronics Co., Ltd.
- Eunkyu LEE
- G01 - MEASURING TESTING
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING TWO DIMENSIONAL MATERIAL
- Publication number 20240113211
- Publication date Apr 4, 2024
- Samsung Electronics Co., Ltd.
- Yeonchoo CHO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTERCONNECTION LAYER STRUCTURES INCLUDING TWO-DIMENSIONAL (2D) MAT...
- Publication number 20240113028
- Publication date Apr 4, 2024
- Samsung Electronics Co., Ltd.
- Yeonchoo CHO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTERCONNECT STRUCTURE TO REDUCE CONTACT RESISTANCE, ELECTRONIC DEV...
- Publication number 20230253320
- Publication date Aug 10, 2023
- Samsung Electronics Co., Ltd.
- Hyeonjin SHIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR INCLUDING GATE INSULATING LAYER FORMED OF T...
- Publication number 20230197811
- Publication date Jun 22, 2023
- Samsung Electronics Co., Ltd.
- Minhyun LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL TYPE TRANSISTOR, INVERTER INCLUDING THE SAME, AND VERTICAL...
- Publication number 20230155017
- Publication date May 18, 2023
- Samsung Electronics Co., Ltd.
- Minhyun LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR INCLUDING CHANNEL FORMED OF 2D MATERIAL
- Publication number 20230077783
- Publication date Mar 16, 2023
- Samsung Electronics Co.,Ltd.
- Minhyun LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING TWO-DIMENSIONAL SEMICONDUCTOR MATERIAL
- Publication number 20230076900
- Publication date Mar 9, 2023
- Samsung Electronics Co., Ltd.
- Minhyun LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR ELEMENT, ELECTRONIC SYSTEM INCLUDING THE SEMICONDUCTO...
- Publication number 20230072863
- Publication date Mar 9, 2023
- Samsung Electronics Co., Ltd.
- Eunkyu LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING TRANSITION METAL DICHALCOGENIDE THIN FILM
- Publication number 20230024913
- Publication date Jan 26, 2023
- Samsung Electronics Co., Ltd.
- Kyung-Eun BYUN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMRISTOR AND NEUROMORPHIC DEVICE COMPRISING THE SAME
- Publication number 20220320425
- Publication date Oct 6, 2022
- Samsung Electronics Co., Ltd.
- Minhyun LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOCRYSTALLINE GRAPHENE AND METHOD OF FORMING NANOCRYSTALLINE GRAP...
- Publication number 20220316052
- Publication date Oct 6, 2022
- Samsung Electronics Co., Ltd.
- Sangwon KIM
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
THIN-FILM STRUCTURE, SEMICONDUCTOR ELEMENT INCLUDING THE THIN-FILM...
- Publication number 20220302319
- Publication date Sep 22, 2022
- Samsung Electronics Co., Ltd.
- Changseok LEE
- B82 - NANO-TECHNOLOGY
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20220246718
- Publication date Aug 4, 2022
- Samsung Electronics Co., Ltd.
- Yeonchoo CHO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF PATTERNING TWO-DIMENSIONAL MATERIAL LAYER ON SUBSTRATE, A...
- Publication number 20220238692
- Publication date Jul 28, 2022
- Samsung Electronics Co., Ltd.
- Van Luan NGUYEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTERCONNECT STRUCTURE TO REDUCE CONTACT RESISTANCE, ELECTRONIC DEV...
- Publication number 20220173221
- Publication date Jun 2, 2022
- Samsung Electronics Co., Ltd.
- Hyeonjin SHIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING SURFACE-TREATED SEMICONDUCTOR LAYER
- Publication number 20220140100
- Publication date May 5, 2022
- Samsung Electronics Co., Ltd.
- Yeonchoo CHO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF CALCULATING THICKNESS OF GRAPHENE LAYER AND METHOD OF MEA...
- Publication number 20210372786
- Publication date Dec 2, 2021
- Samsung Electronics Co., Ltd.
- Eunkyu LEE
- G01 - MEASURING TESTING
Information Patent Application
LAYER STRUCTURE INCLUDING DIFFUSION BARRIER LAYER AND METHOD OF MAN...
- Publication number 20210327817
- Publication date Oct 21, 2021
- Samsung Electronics Co., Ltd.
- Hyunjae SONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR INCLUDING CHANNEL FORMED OF 2D MATERIAL
- Publication number 20210296445
- Publication date Sep 23, 2021
- Samsung Electronics Co., Ltd.
- Minhyun LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL TYPE TRANSISTOR, INVERTER INCLUDING THE SAME, AND VERTICAL...
- Publication number 20210288171
- Publication date Sep 16, 2021
- Samsung Electronics Co., Ltd.
- Minhyun LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR INCLUDING GATE INSULATING LAYER FORMED OF T...
- Publication number 20210234015
- Publication date Jul 29, 2021
- Samsung Electronics Co., Ltd.
- Minhyun LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING TWO-DIMENSIONAL SEMICONDUCTOR MATERIAL
- Publication number 20210226011
- Publication date Jul 22, 2021
- Samsung Electronics Co., Ltd.
- Minhyun LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING GRAPHENE
- Publication number 20210163296
- Publication date Jun 3, 2021
- Samsung Electronics Co., Ltd.
- Van Luan NGUYEN
- C01 - INORGANIC CHEMISTRY
Information Patent Application
INTERCONNECT STRUCTURE HAVING NANOCRYSTALLINE GRAPHENE CAP LAYER AN...
- Publication number 20210159183
- Publication date May 27, 2021
- Samsung Electronics Co., Ltd.
- Kyung-Eun Byun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING GRAPHENE AND METHOD OF MANUFACTURING...
- Publication number 20210074815
- Publication date Mar 11, 2021
- Samsung Electronics Co., Ltd.
- Keunwook SHIN
- C01 - INORGANIC CHEMISTRY
Information Patent Application
METHOD OF FORMING TRANSITION METAL DICHALCOGENIDE THIN FILM
- Publication number 20210020438
- Publication date Jan 21, 2021
- Samsung Electronics Co., Ltd.
- Kyung-Eun BYUN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMRISTOR AND NEUROMORPHIC DEVICE COMPRISING THE SAME
- Publication number 20200395540
- Publication date Dec 17, 2020
- Samsung Electronics Co., Ltd.
- Minhyun LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTERCONNECT STRUCTURE HAVING NANOCRYSTALLINE GRAPHENE CAP LAYER AN...
- Publication number 20200294928
- Publication date Sep 17, 2020
- Samsung Electronics Co., Ltd.
- Kyung-Eun Byun
- H01 - BASIC ELECTRIC ELEMENTS

Yeonchoo CHO

Person

Patents Grantslast 30 patents

Method of pre-treating substrate and method of directly forming gra...

Metal-to-semiconductor contact including a 2D crystal material layer

Method of forming graphene

Semiconductor device including two-dimensional semiconductor material

Semiconductor device including surface-treated semiconductor layer

Field effect transistor including channel formed of 2D material

Semiconductor device including graphene and method of manufacturing...

Vertical type transistor, inverter including the same, and vertical...

Memristor and neuromorphic device comprising the same

Method of patterning two-dimensional material layer on substrate, a...

Method of calculating thickness of graphene layer and method of mea...

Method of forming transition metal dichalcogenide thin film

Layer structure including diffusion barrier layer and method of man...

Interconnect structure having nanocrystalline graphene cap layer an...

Interconnect structure to reduce contact resistance, electronic dev...

Field effect transistor including gate insulating layer formed of t...

Method of forming graphene

Vertical type transistor, inverter including the same, and vertical...

Field effect transistor including channel formed of 2D material

Semiconductor device including two-dimensional semiconductor material

Method of forming transition metal dichalcogenide thin film

Memristor and neuromorphic device comprising the same

Interconnect structure having nanocrystalline graphene cap layer an...

Method of directly growing carbon material on substrate

Hardmask composition and method of forming pattern using the hardma...

Layer structure including diffusion barrier layer and method of man...

Interconnect structure and electronic device employing the same

Interconnect structure having nanocrystalline graphene cap layer an...

Method of forming nanocrystalline graphene, and device including na...

Semiconductor device including graphene and method of manufacturing...

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE INCLUDING TWO-DIMENSIONAL SEMICONDUCTOR MATERIAL

METHOD OF CALCULATING THICKNESS OF GRAPHENE LAYER AND METHOD OF MEA...

SEMICONDUCTOR DEVICE INCLUDING TWO DIMENSIONAL MATERIAL

INTERCONNECTION LAYER STRUCTURES INCLUDING TWO-DIMENSIONAL (2D) MAT...

INTERCONNECT STRUCTURE TO REDUCE CONTACT RESISTANCE, ELECTRONIC DEV...

FIELD EFFECT TRANSISTOR INCLUDING GATE INSULATING LAYER FORMED OF T...

VERTICAL TYPE TRANSISTOR, INVERTER INCLUDING THE SAME, AND VERTICAL...

FIELD EFFECT TRANSISTOR INCLUDING CHANNEL FORMED OF 2D MATERIAL

SEMICONDUCTOR DEVICE INCLUDING TWO-DIMENSIONAL SEMICONDUCTOR MATERIAL

SEMICONDUCTOR ELEMENT, ELECTRONIC SYSTEM INCLUDING THE SEMICONDUCTO...

METHOD OF FORMING TRANSITION METAL DICHALCOGENIDE THIN FILM

MEMRISTOR AND NEUROMORPHIC DEVICE COMPRISING THE SAME

NANOCRYSTALLINE GRAPHENE AND METHOD OF FORMING NANOCRYSTALLINE GRAP...

THIN-FILM STRUCTURE, SEMICONDUCTOR ELEMENT INCLUDING THE THIN-FILM...

SEMICONDUCTOR DEVICE

METHOD OF PATTERNING TWO-DIMENSIONAL MATERIAL LAYER ON SUBSTRATE, A...

INTERCONNECT STRUCTURE TO REDUCE CONTACT RESISTANCE, ELECTRONIC DEV...

SEMICONDUCTOR DEVICE INCLUDING SURFACE-TREATED SEMICONDUCTOR LAYER

METHOD OF CALCULATING THICKNESS OF GRAPHENE LAYER AND METHOD OF MEA...

LAYER STRUCTURE INCLUDING DIFFUSION BARRIER LAYER AND METHOD OF MAN...

FIELD EFFECT TRANSISTOR INCLUDING CHANNEL FORMED OF 2D MATERIAL

VERTICAL TYPE TRANSISTOR, INVERTER INCLUDING THE SAME, AND VERTICAL...

FIELD EFFECT TRANSISTOR INCLUDING GATE INSULATING LAYER FORMED OF T...

SEMICONDUCTOR DEVICE INCLUDING TWO-DIMENSIONAL SEMICONDUCTOR MATERIAL

METHOD OF FORMING GRAPHENE

INTERCONNECT STRUCTURE HAVING NANOCRYSTALLINE GRAPHENE CAP LAYER AN...

SEMICONDUCTOR DEVICE INCLUDING GRAPHENE AND METHOD OF MANUFACTURING...

METHOD OF FORMING TRANSITION METAL DICHALCOGENIDE THIN FILM

MEMRISTOR AND NEUROMORPHIC DEVICE COMPRISING THE SAME

INTERCONNECT STRUCTURE HAVING NANOCRYSTALLINE GRAPHENE CAP LAYER AN...