Yeong-Chang Choug

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Irvine, CA, US

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Patents Grantslast 30 patents

Information Patent Grant
High electron mobility transistor (HEMT) structure with refractory...
- Patent number 7,411,226
- Issue date Aug 12, 2008
- Northrop Grumman Corporation
- Yeong-Chang Choug
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
High electron mobility transistor (HEMT) structure with refractory...
- Publication number 20060244009
- Publication date Nov 2, 2006
- Northrop Grumman Corporation
- Yeong-Chang Choug
- H01 - BASIC ELECTRIC ELEMENTS