Yeong-Jyh T. Lii

Person

Plano, TX, US

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device having a multiple thickness interconnect
- Patent number 7,176,574
- Issue date Feb 13, 2007
- FREESCALE SEMICONDUCTOR, INC.
- Kathleen C. Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Inverted isolation formed with spacers
- Patent number 6,891,229
- Issue date May 10, 2005
- FREESCALE SEMICONDUCTOR, INC.
- Andrea Franke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a passivation layer for air gap formation
- Patent number 6,838,354
- Issue date Jan 4, 2005
- FREESCALE SEMICONDUCTOR, INC.
- Cindy K. Goldberg
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a semiconductor interconnect with multiple thick...
- Patent number 6,815,820
- Issue date Nov 9, 2004
- FREESCALE SEMICONDUCTOR, INC.
- Kathleen C. Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and structure for low-k dielectric constant applications
- Patent number 6,774,053
- Issue date Aug 10, 2004
- FREESCALE SEMICONDUCTOR, INC.
- Errol Todd Ryan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a semiconductor device structure in a semiconduc...
- Patent number 6,689,676
- Issue date Feb 10, 2004
- Motorola, Inc.
- Daniel Thanh-Khac Pham
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device, memory cell, and processes for forming them
- Patent number 6,686,633
- Issue date Feb 3, 2004
- Motorola, Inc.
- Craig S. Lage
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of preventing two neighboring contacts from a short-circuit...
- Patent number 6,369,430
- Issue date Apr 9, 2002
- Motorola, Inc.
- Olubunmi O. Adetutu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a semiconductor device with an opening in a diel...
- Patent number 6,362,071
- Issue date Mar 26, 2002
- Motorola, Inc.
- Bich-Yen Nguyen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metallic oxide gate electrode stack having a metallic gate dielectr...
- Patent number 6,294,820
- Issue date Sep 25, 2001
- Motorola, Inc.
- Kevin Lucas
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for forming a semiconductor device having an interconnect o...
- Patent number 6,184,073
- Issue date Feb 6, 2001
- Motorola, Inc.
- Craig S. Lage
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a thin oxide for use in semiconductor inte...
- Patent number 6,146,948
- Issue date Nov 14, 2000
- Motorola Inc.
- Wei Edwin Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tantalum oxide anti-reflective coating (ARC) integrated with a meta...
- Patent number 6,004,850
- Issue date Dec 21, 1999
- Motorola Inc.
- Kevin Lucas
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for forming a semiconductor device
- Patent number 5,888,588
- Issue date Mar 30, 1999
- Motorola, Inc.
- Rajan Nagabushnam
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Patents Applicationslast 30 patents

Information Patent Application
Semiconductor device having a multiple thickness interconnect
- Publication number 20050035459
- Publication date Feb 17, 2005
- Kathleen C. Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Inverted isolation formed with spacers
- Publication number 20040217437
- Publication date Nov 4, 2004
- Andrea Franke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for forming a passivation layer for air gap formation and st...
- Publication number 20040119134
- Publication date Jun 24, 2004
- Cindy K. Goldberg
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING A SEMICONDUCTOR DEVICE STRUCTURE IN A SEMICONDUC...
- Publication number 20040018681
- Publication date Jan 29, 2004
- Daniel Thanh-Khac Pham
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Multiple thickness semiconductor interconnect and method therefor
- Publication number 20030209779
- Publication date Nov 13, 2003
- Kathleen C. Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for forming a semiconductor device having elevated source an...
- Publication number 20020171107
- Publication date Nov 21, 2002
- Baohong Cheng
- H01 - BASIC ELECTRIC ELEMENTS

Yeong-Jyh T. Lii

Person

Patents Grantslast 30 patents

Semiconductor device having a multiple thickness interconnect

Inverted isolation formed with spacers

Method for forming a passivation layer for air gap formation

Method for forming a semiconductor interconnect with multiple thick...

Method and structure for low-k dielectric constant applications

Method for forming a semiconductor device structure in a semiconduc...

Semiconductor device, memory cell, and processes for forming them

Method of preventing two neighboring contacts from a short-circuit...

Method for forming a semiconductor device with an opening in a diel...

Metallic oxide gate electrode stack having a metallic gate dielectr...

Process for forming a semiconductor device having an interconnect o...

Method for manufacturing a thin oxide for use in semiconductor inte...

Tantalum oxide anti-reflective coating (ARC) integrated with a meta...

Process for forming a semiconductor device

Patents Applicationslast 30 patents

Semiconductor device having a multiple thickness interconnect

Inverted isolation formed with spacers

Method for forming a passivation layer for air gap formation and st...

METHOD FOR FORMING A SEMICONDUCTOR DEVICE STRUCTURE IN A SEMICONDUC...

Multiple thickness semiconductor interconnect and method therefor

Method for forming a semiconductor device having elevated source an...