Yeou-Ming Lin

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Jungli City, TW

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Patents Grantslast 30 patents

Information Patent Grant
Method and structure for forming high-k gates
- Patent number 7,071,066
- Issue date Jul 4, 2006
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ming-Fang Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Chemical vapor deposition (CVD) method employing wetting pre-treatment
- Patent number 6,764,927
- Issue date Jul 20, 2004
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Liang-Gi Yao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Layer of high-k inter-poly dielectric
- Patent number 6,753,224
- Issue date Jun 22, 2004
- Taiwan Semiconductor Manufacturing Company
- Yeou-Ming Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ozone-enhanced oxidation for high-k dielectric semiconductor devices
- Patent number 6,573,193
- Issue date Jun 3, 2003
- Taiwan Semiconductor Manufacturing Co., Ltd
- Mo-Chiun Yu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Method and structure for forming high-k gates
- Publication number 20050056900
- Publication date Mar 17, 2005
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ming-Fang Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NOVEL LAYER OF HIGH-K INTER-POLY DIELECTRIC
- Publication number 20040121534
- Publication date Jun 24, 2004
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY
- Yeou-Ming Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Ozone-enhanced oxidation for high-k dielectric semiconductor devices
- Publication number 20030032303
- Publication date Feb 13, 2003
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Mo-Chiun Yu
- H01 - BASIC ELECTRIC ELEMENTS