Yi-Lung Lien

Person

Hsinchu City, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Ohmic metal structure for GaN device
- Patent number 10,720,390
- Issue date Jul 21, 2020
- WIN Semiconductors Corp.
- Chang-Hwang Hua
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
RF power transistor
- Patent number 9,666,685
- Issue date May 30, 2017
- National Tsing Hua University
- Shuo-Hung Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating III-nitride based semiconductor on partial is...
- Patent number 8,999,849
- Issue date Apr 7, 2015
- National Tsing Hua University
- Yu-Syuan Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system of storage area network switch addressing
- Patent number 7,848,320
- Issue date Dec 7, 2010
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ren-Yi Tang
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Grant
Method for forming a semiconductor structure having nanometer line-...
- Patent number 7,501,348
- Issue date Mar 10, 2009
- National Chiao Tung University
- Szu-Hung Chen
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
WIDEBAND IMPEDANCE MATCHING NETWORK
- Publication number 20200304089
- Publication date Sep 24, 2020
- WIN Semiconductors Corp.
- Rachit Joshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
OHMIC METAL STRUCTURE FOR GaN DEVICE
- Publication number 20190131244
- Publication date May 2, 2019
- WIN Semiconductors Corp.
- Chang-Hwang HUA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RF POWER TRANSISTOR
- Publication number 20160218205
- Publication date Jul 28, 2016
- National Tsing-Hua University
- Shuo-Hung HSU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RF POWER TRANSISTOR
- Publication number 20160087090
- Publication date Mar 24, 2016
- National Tsing-Hua University
- Shuo-Hung HSU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Fabricating III-Nitride Based Semiconductor on Partial Is...
- Publication number 20150099363
- Publication date Apr 9, 2015
- National Tsing-Hua University
- Yu-Syuan Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for forming a semiconductor structure having nanometer line-...
- Publication number 20080254632
- Publication date Oct 16, 2008
- National Chiao Tung University
- Szu-Hung Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Electronic mail system and method for multi-geographical domains
- Publication number 20060020667
- Publication date Jan 26, 2006
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jui-Ming Wang
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Application
Method and system of storage area network switch addressing
- Publication number 20050271052
- Publication date Dec 8, 2005
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ren-Yi Tang
- H04 - ELECTRIC COMMUNICATION TECHNIQUE

Yi-Lung Lien

Person

Patents Grantslast 30 patents

Ohmic metal structure for GaN device

RF power transistor

Method of fabricating III-nitride based semiconductor on partial is...

Method and system of storage area network switch addressing

Method for forming a semiconductor structure having nanometer line-...

Patents Applicationslast 30 patents

WIDEBAND IMPEDANCE MATCHING NETWORK

OHMIC METAL STRUCTURE FOR GaN DEVICE

RF POWER TRANSISTOR

RF POWER TRANSISTOR

Method of Fabricating III-Nitride Based Semiconductor on Partial Is...

Method for forming a semiconductor structure having nanometer line-...

Electronic mail system and method for multi-geographical domains

Method and system of storage area network switch addressing