Yi Qi

Person

Niskayuna, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Transistor channel having vertically stacked nanosheets coupled by...
- Patent number 10,957,799
- Issue date Mar 23, 2021
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor channel having vertically stacked nanosheets coupled by...
- Patent number 10,903,369
- Issue date Jan 26, 2021
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Faceted epitaxial source/drain regions
- Patent number 10,756,184
- Issue date Aug 25, 2020
- GLOBALFOUNDRIES Inc.
- George R. Mulfinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET device with a wrap-around silicide source/drain contact stru...
- Patent number 10,700,173
- Issue date Jun 30, 2020
- GLOBALFOUNDRIES Inc.
- Yi Qi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-effect transistors with a grown silicon-germanium channel
- Patent number 10,680,065
- Issue date Jun 9, 2020
- GlobalFoundries Inc.
- George R. Mulfinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Repaired mask structures and resultant underlying patterned structures
- Patent number 10,643,845
- Issue date May 5, 2020
- GLOBALFOUNDRIES Inc.
- Xunyuan Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin-type transistors with spacers on the gates
- Patent number 10,636,894
- Issue date Apr 28, 2020
- GLOBALFOUNDRIES Inc.
- Yanping Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wrap-all-around contact for nanosheet-FET and method of forming same
- Patent number 10,559,656
- Issue date Feb 11, 2020
- GLOBALFOUNDRIES Inc.
- Emilie M. S. Bourjot
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-effect transistors with improved dielectric gap fill
- Patent number 10,546,775
- Issue date Jan 28, 2020
- GLOBALFOUNDRIES Inc.
- Wei Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor device structures with retrograde wells in CMOS applicat...
- Patent number 10,483,172
- Issue date Nov 19, 2019
- GLOBALFOUNDRIES Inc.
- Vara G. Reddy Vakada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial region for embedded source/drain region having uniform th...
- Patent number 10,461,155
- Issue date Oct 29, 2019
- GLOBALFOUNDRIES Inc.
- Yoong Hooi Yong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal-insulator-metal capacitors with enlarged contact areas
- Patent number 10,446,483
- Issue date Oct 15, 2019
- GLOBALFOUNDRIES Inc.
- Sipeng Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multiple gate length device with self-aligned top junction
- Patent number 10,410,929
- Issue date Sep 10, 2019
- GLOBALFOUNDRIES Inc.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistors with H-shaped or U-shaped channels and method for formi...
- Patent number 10,381,459
- Issue date Aug 13, 2019
- GLOBALFOUNDRIES Inc.
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single-curvature cavity for semiconductor epitaxy
- Patent number 10,355,104
- Issue date Jul 16, 2019
- GLOBALFOUNDRIES Inc.
- Yi Qi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual-curvature cavity for epitaxial semiconductor growth
- Patent number 10,297,675
- Issue date May 21, 2019
- GLOBALFOUNDRIES Inc.
- Alina Vinslava
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a vertical field effect transistor (VFET) and a V...
- Patent number 10,276,689
- Issue date Apr 30, 2019
- GLOBALFOUNDRIES Inc.
- Yi Qi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Boundary spacer structure and integration
- Patent number 10,262,903
- Issue date Apr 16, 2019
- GLOBALFOUNDRIES Inc.
- Judson R. Holt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming vertical field effect transistors with different...
- Patent number 10,249,538
- Issue date Apr 2, 2019
- GLOBALFOUNDRIES Inc.
- Yi Qi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical field effect transistor formation with critical dimension...
- Patent number 10,217,846
- Issue date Feb 26, 2019
- GLOBALFOUNDRIES Inc.
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical-transport field-effect transistors with an etched-through...
- Patent number 10,211,317
- Issue date Feb 19, 2019
- GLOBALFOUNDRIES Inc.
- Yi Qi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal-insulator-metal capacitors with dielectric inner spacers
- Patent number 10,211,147
- Issue date Feb 19, 2019
- GLOBALFOUNDRIES Inc.
- Xunyuan Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming long channel FinFET with short channel vertical FinFET and...
- Patent number 10,170,473
- Issue date Jan 1, 2019
- GLOBALFOUNDRIES Inc.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Asymmetric spacer for preventing epitaxial merge between adjacent d...
- Patent number 10,163,635
- Issue date Dec 25, 2018
- GLOBALFOUNDRIES Inc.
- Yi Qi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Finfet diffusion break having protective liner in fin insulator
- Patent number 10,164,010
- Issue date Dec 25, 2018
- GLOBALFOUNDRIES Inc.
- Wei Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming epi semiconductor material on a thinned fin in t...
- Patent number 10,121,868
- Issue date Nov 6, 2018
- GLOBALFOUNDRIES Inc.
- Yi Qi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit structure incorporating non-planar field effect...
- Patent number 10,068,902
- Issue date Sep 4, 2018
- GLOBALFOUNDRIES Inc.
- Yanping Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multiple Fin heights with dielectric isolation
- Patent number 10,068,810
- Issue date Sep 4, 2018
- GLOBALFOUNDRIES Inc.
- Xusheng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical-transport field-effect transistors with an etched-through...
- Patent number 10,050,125
- Issue date Aug 14, 2018
- GLOBALFOUNDRIES Inc.
- Yi Qi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming EPI semiconductor material on the source/drain r...
- Patent number 9,887,094
- Issue date Feb 6, 2018
- GLOBALFOUNDRIES Inc.
- Yi Qi
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
TRANSISTOR CHANNEL HAVING VERTICALLY STACKED NANOSHEETS COUPLED BY...
- Publication number 20200274000
- Publication date Aug 27, 2020
- International Business Machines Corporation
- RUILONG XIE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR CHANNEL HAVING VERTICALLY STACKED NANOSHEETS COUPLED BY...
- Publication number 20200273979
- Publication date Aug 27, 2020
- International Business Machines Corporation
- RUILONG XIE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FACETED EPITAXIAL SOURCE/DRAIN REGIONS
- Publication number 20200144365
- Publication date May 7, 2020
- GLOBALFOUNDRIES INC.
- George R. MULFINGER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD-EFFECT TRANSISTORS WITH IMPROVED DIELECTRIC GAP FILL
- Publication number 20200043779
- Publication date Feb 6, 2020
- GLOBALFOUNDRIES INC.
- Wei Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD-EFFECT TRANSISTORS WITH A GROWN SILICON-GERMANIUM CHANNEL
- Publication number 20200044029
- Publication date Feb 6, 2020
- GLOBALFOUNDRIES INC.
- George R. Mulfinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPOSITE SPACERS FOR TAILORING THE SHAPE OF THE SOURCE AND DRAIN R...
- Publication number 20200020770
- Publication date Jan 16, 2020
- GLOBALFOUNDRIES INC.
- Yi Qi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WRAP-ALL-AROUND CONTACT FOR NANOSHEET-FET AND METHOD OF FORMING SAME
- Publication number 20190341448
- Publication date Nov 7, 2019
- GLOBALFOUNDRIES INC.
- Emilie M.S. Bourjot
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET DEVICE WITH A WRAP-AROUND SILICIDE SOURCE/DRAIN CONTACT STRU...
- Publication number 20190312117
- Publication date Oct 10, 2019
- GLOBALFOUNDRIES INC.
- Yi Qi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN-TYPE TRANSISTORS WITH SPACERS ON THE GATES
- Publication number 20190280105
- Publication date Sep 12, 2019
- GLOBALFOUNDRIES INC.
- Yanping Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL-INSULATOR-METAL CAPACITORS WITH ENLARGED CONTACT AREAS
- Publication number 20190221515
- Publication date Jul 18, 2019
- GLOBALFOUNDRIES INC.
- Sipeng Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTORS WITH H-SHAPED OR U-SHAPED CHANNELS AND METHOD FOR FORMI...
- Publication number 20190214482
- Publication date Jul 11, 2019
- GLOBALFOUNDRIES INC.
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REPAIRED MASK STRUCTURES AND RESULTANT UNDERLYING PATTERNED STRUCTURES
- Publication number 20190206682
- Publication date Jul 4, 2019
- GLOBALFOUNDRIES INC.
- Xunyuan ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTIPLE GATE LENGTH DEVICE WITH SELF-ALIGNED TOP JUNCTION
- Publication number 20190206743
- Publication date Jul 4, 2019
- GLOBALFOUNDRIES INC.
- Hui ZANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL-CURVATURE CAVITY FOR EPITAXIAL SEMICONDUCTOR GROWTH
- Publication number 20190181243
- Publication date Jun 13, 2019
- GLOBALFOUNDRIES INC.
- Alina Vinslava
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL REGION FOR EMBEDDED SOURCE/DRAIN REGION HAVING UNIFORM TH...
- Publication number 20190148492
- Publication date May 16, 2019
- GLOBALFOUNDRIES INC.
- Yoong Hooi Yong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SINGLE-CURVATURE CAVITY FOR SEMICONDUCTOR EPITAXY
- Publication number 20190131432
- Publication date May 2, 2019
- GLOBALFOUNDRIES INC.
- Yi Qi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL-CURVATURE CAVITY FOR EPITAXIAL SEMICONDUCTOR GROWTH
- Publication number 20190131433
- Publication date May 2, 2019
- GLOBALFOUNDRIES INC.
- Alina Vinslava
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING VERTICAL FIELD EFFECT TRANSISTORS WITH DIFFERENT...
- Publication number 20190103319
- Publication date Apr 4, 2019
- GLOBALFOUNDRIES INC.
- Yi Qi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOSHEET TRANSISTOR WITH IMPROVED INNER SPACER
- Publication number 20190081155
- Publication date Mar 14, 2019
- GLOBALFOUNDRIES INC.
- Ruilong XIE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL-TRANSPORT FIELD-EFFECT TRANSISTORS WITH AN ETCHED-THROUGH...
- Publication number 20190051735
- Publication date Feb 14, 2019
- GLOBALFOUNDRIES INC.
- Yi Qi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL-INSULATOR-METAL CAPACITORS WITH DIELECTRIC INNER SPACERS
- Publication number 20190013269
- Publication date Jan 10, 2019
- GLOBALFOUNDRIES INC.
- Xunyuan Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BOUNDARY SPACER STRUCTURE AND INTEGRATION
- Publication number 20180374759
- Publication date Dec 27, 2018
- GLOBALFOUNDRIES INC.
- Judson R. HOLT
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING A VERTICAL FIELD EFFECT TRANSISTOR (VFET) AND A V...
- Publication number 20180358452
- Publication date Dec 13, 2018
- GLOBALFOUNDRIES INC.
- YI QI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING EPI SEMICONDUCTOR MATERIAL ON A THINNED FIN IN T...
- Publication number 20180323269
- Publication date Nov 8, 2018
- GLOBALFOUNDRIES INC.
- Yi Qi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR DEVICE STRUCTURES WITH RETROGRADE WELLS IN CMOS APPLICAT...
- Publication number 20180047641
- Publication date Feb 15, 2018
- GLOBALFOUNDRIES INC.
- Vara G. Reddy Vakada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RAISED FIN STRUCTURES AND METHODS OF FABRICATION
- Publication number 20160260605
- Publication date Sep 8, 2016
- GLOBALFOUNDRIES INC.
- Yi QI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET DEVICE INCLUDING A UNIFORM SILICON ALLOY FIN
- Publication number 20160126353
- Publication date May 5, 2016
- GLOBALFOUNDRIES INC.
- Ajey Poovannummoottil Jacob
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING 3D DEVICES WITH DIELECTRIC ISOLATION AND A STRAI...
- Publication number 20160118472
- Publication date Apr 28, 2016
- GLOBALFOUNDRIES INC.
- Yi Qi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING STRAINED EPITAXIAL SEMICONDUCTOR MATERIAL(S) ABO...
- Publication number 20160118255
- Publication date Apr 28, 2016
- GLOBALFOUNDRIES INC.
- Yi Qi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL-STRAINED NANOWIRE AND FINFET DEVICES WITH DIELECTRIC ISOLATION
- Publication number 20160104799
- Publication date Apr 14, 2016
- GLOBALFOUNDRIES INC.
- Yi QI
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Transistor channel having vertically stacked nanosheets coupled by...

Transistor channel having vertically stacked nanosheets coupled by...

Faceted epitaxial source/drain regions

FinFET device with a wrap-around silicide source/drain contact stru...

Field-effect transistors with a grown silicon-germanium channel

Repaired mask structures and resultant underlying patterned structures

Fin-type transistors with spacers on the gates

Wrap-all-around contact for nanosheet-FET and method of forming same

Field-effect transistors with improved dielectric gap fill

Transistor device structures with retrograde wells in CMOS applicat...

Epitaxial region for embedded source/drain region having uniform th...

Metal-insulator-metal capacitors with enlarged contact areas

Multiple gate length device with self-aligned top junction

Transistors with H-shaped or U-shaped channels and method for formi...

Single-curvature cavity for semiconductor epitaxy

Dual-curvature cavity for epitaxial semiconductor growth

Method of forming a vertical field effect transistor (VFET) and a V...

Boundary spacer structure and integration

Method of forming vertical field effect transistors with different...

Vertical field effect transistor formation with critical dimension...

Vertical-transport field-effect transistors with an etched-through...

Metal-insulator-metal capacitors with dielectric inner spacers

Forming long channel FinFET with short channel vertical FinFET and...

Asymmetric spacer for preventing epitaxial merge between adjacent d...

Finfet diffusion break having protective liner in fin insulator

Methods of forming epi semiconductor material on a thinned fin in t...

Integrated circuit structure incorporating non-planar field effect...

Multiple Fin heights with dielectric isolation

Vertical-transport field-effect transistors with an etched-through...

Methods of forming EPI semiconductor material on the source/drain r...

Patents Applicationslast 30 patents

TRANSISTOR CHANNEL HAVING VERTICALLY STACKED NANOSHEETS COUPLED BY...

TRANSISTOR CHANNEL HAVING VERTICALLY STACKED NANOSHEETS COUPLED BY...

FACETED EPITAXIAL SOURCE/DRAIN REGIONS

FIELD-EFFECT TRANSISTORS WITH IMPROVED DIELECTRIC GAP FILL

FIELD-EFFECT TRANSISTORS WITH A GROWN SILICON-GERMANIUM CHANNEL

COMPOSITE SPACERS FOR TAILORING THE SHAPE OF THE SOURCE AND DRAIN R...

WRAP-ALL-AROUND CONTACT FOR NANOSHEET-FET AND METHOD OF FORMING SAME

FINFET DEVICE WITH A WRAP-AROUND SILICIDE SOURCE/DRAIN CONTACT STRU...

FIN-TYPE TRANSISTORS WITH SPACERS ON THE GATES

METAL-INSULATOR-METAL CAPACITORS WITH ENLARGED CONTACT AREAS

TRANSISTORS WITH H-SHAPED OR U-SHAPED CHANNELS AND METHOD FOR FORMI...

REPAIRED MASK STRUCTURES AND RESULTANT UNDERLYING PATTERNED STRUCTURES

MULTIPLE GATE LENGTH DEVICE WITH SELF-ALIGNED TOP JUNCTION

DUAL-CURVATURE CAVITY FOR EPITAXIAL SEMICONDUCTOR GROWTH

EPITAXIAL REGION FOR EMBEDDED SOURCE/DRAIN REGION HAVING UNIFORM TH...

SINGLE-CURVATURE CAVITY FOR SEMICONDUCTOR EPITAXY

DUAL-CURVATURE CAVITY FOR EPITAXIAL SEMICONDUCTOR GROWTH

METHOD OF FORMING VERTICAL FIELD EFFECT TRANSISTORS WITH DIFFERENT...

NANOSHEET TRANSISTOR WITH IMPROVED INNER SPACER

VERTICAL-TRANSPORT FIELD-EFFECT TRANSISTORS WITH AN ETCHED-THROUGH...

METAL-INSULATOR-METAL CAPACITORS WITH DIELECTRIC INNER SPACERS

BOUNDARY SPACER STRUCTURE AND INTEGRATION

METHOD OF FORMING A VERTICAL FIELD EFFECT TRANSISTOR (VFET) AND A V...

METHODS OF FORMING EPI SEMICONDUCTOR MATERIAL ON A THINNED FIN IN T...

TRANSISTOR DEVICE STRUCTURES WITH RETROGRADE WELLS IN CMOS APPLICAT...

RAISED FIN STRUCTURES AND METHODS OF FABRICATION

FINFET DEVICE INCLUDING A UNIFORM SILICON ALLOY FIN

METHODS OF FORMING 3D DEVICES WITH DIELECTRIC ISOLATION AND A STRAI...

METHODS OF FORMING STRAINED EPITAXIAL SEMICONDUCTOR MATERIAL(S) ABO...

DUAL-STRAINED NANOWIRE AND FINFET DEVICES WITH DIELECTRIC ISOLATION