Yi Song

Person

Albany, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Inner spacer formation for nanosheet transistors
- Patent number 12,046,680
- Issue date Jul 23, 2024
- International Business Machines Corporation
- Yi Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanosheet transistor bottom isolation
- Patent number 11,489,044
- Issue date Nov 1, 2022
- International Business Machines Corporation
- Zhenxing Bi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical field effect transistors with self aligned contacts
- Patent number 11,355,644
- Issue date Jun 7, 2022
- International Business Machines Corporation
- Yi Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor having wrap-around source/drain contacts and under-conta...
- Patent number 11,296,226
- Issue date Apr 5, 2022
- International Business Machines Corporation
- Yi Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical field-effect transistor with T-shaped gate
- Patent number 11,217,680
- Issue date Jan 4, 2022
- International Business Machines Corporation
- Yi Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual width finned semiconductor structure
- Patent number 11,189,532
- Issue date Nov 30, 2021
- International Business Machines Corporation
- Yi Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanosheet transistor bottom isolation
- Patent number 10,937,860
- Issue date Mar 2, 2021
- International Business Machines Corporation
- Zhenxing Bi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fuse element resistance enhancement by laser anneal and ion implant...
- Patent number 10,903,162
- Issue date Jan 26, 2021
- International Business Machines Corporation
- Liying Jiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source/drain extension regions and air spacers for nanosheet field-...
- Patent number 10,892,328
- Issue date Jan 12, 2021
- International Business Machines Corporation
- Yi Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Controlling active fin height of FinFET device
- Patent number 10,892,193
- Issue date Jan 12, 2021
- International Business Machines Corporation
- Yi Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Airgap formation in BEOL interconnect structure using sidewall imag...
- Patent number 10,886,169
- Issue date Jan 5, 2021
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around field-effect transistor devices having source/drain...
- Patent number 10,832,907
- Issue date Nov 10, 2020
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned tunneling field effect transistors
- Patent number 10,833,180
- Issue date Nov 10, 2020
- International Business Machines Corporation
- Yi Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cointegration of FET devices with decoupling capacitor
- Patent number 10,804,262
- Issue date Oct 13, 2020
- International Business Machines Corporation
- Juntao Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Controlling active fin height of FinFET device using etch protectio...
- Patent number 10,770,361
- Issue date Sep 8, 2020
- International Business Machines Corporation
- Yi Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Area selective cyclic deposition for VFET top spacer
- Patent number 10,749,011
- Issue date Aug 18, 2020
- International Business Machines Corporation
- Zhenxing Bi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual width finned semiconductor structure
- Patent number 10,672,668
- Issue date Jun 2, 2020
- International Business Machines Corporation
- Yi Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Controlling active fin height of FinFET device using etch protectio...
- Patent number 10,665,514
- Issue date May 26, 2020
- International Business Machines Corporation
- Yi Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Airgap formation in BEOL interconnect structure using sidewall imag...
- Patent number 10,490,447
- Issue date Nov 26, 2019
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bottom isolation for nanosheet transistors on bulk substrate
- Patent number 10,461,154
- Issue date Oct 29, 2019
- International Business Machines Corporation
- Yi Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Asymmetric dual gate fully depleted transistor
- Patent number 10,446,686
- Issue date Oct 15, 2019
- International Business Machines Corporation
- Terry Hook
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
NANOSHEET DEVICE WITH AIR-GAPED SOURCE/DRAIN REGIONS
- Publication number 20230178596
- Publication date Jun 8, 2023
- International Business Machines Corporation
- HUIMEI ZHOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INNER SPACER FORMATION FOR NANOSHEET TRANSISTORS
- Publication number 20230114163
- Publication date Apr 13, 2023
- International Business Machines Corporation
- Yi Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Bottom Air Spacer by Oxidation
- Publication number 20230107182
- Publication date Apr 6, 2023
- International Business Machines Corporation
- HUIMEI ZHOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR HAVING WRAP-AROUND SOURCE/DRAIN CONTACTS AND UNDER-CONTA...
- Publication number 20220157985
- Publication date May 19, 2022
- International Business Machines Corporation
- Yi Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOSHEET TRANSISTOR BOTTOM ISOLATION
- Publication number 20210151558
- Publication date May 20, 2021
- International Business Machines Corporation
- Zhenxing Bi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR HAVING WRAP-AROUND SOURCE/DRAIN CONTACTS AND UNDER-CONTA...
- Publication number 20210119031
- Publication date Apr 22, 2021
- International Business Machines Corporation
- Yi Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL FIELD-EFFECT TRANSISTOR WITH T-SHAPED GATE
- Publication number 20200373413
- Publication date Nov 26, 2020
- International Business Machines Corporation
- Yi Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOSHEET TRANSISTOR BOTTOM ISOLATION
- Publication number 20200295130
- Publication date Sep 17, 2020
- International Business Machines Corporation
- Zhenxing Bi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FUSE ELEMENT RESISTANCE ENHANCEMENT BY LASER ANNEAL AND ION IMPLANT...
- Publication number 20200286827
- Publication date Sep 10, 2020
- International Business Machines Corporation
- Liying Jiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE/DRAIN EXTENSION REGIONS AND AIR SPACERS FOR NANOSHEET FIELD-...
- Publication number 20200286992
- Publication date Sep 10, 2020
- International Business Machines Corporation
- Yi Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COINTEGRATION OF FET DEVICES WITH DECOUPLING CAPACITOR
- Publication number 20200273857
- Publication date Aug 27, 2020
- International Business Machines Corporation
- Juntao Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND FIELD-EFFECT TRANSISTOR DEVICES HAVING SOURCE/DRAIN...
- Publication number 20200266060
- Publication date Aug 20, 2020
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL WIDTH FINNED SEMICONDUCTOR STRUCTURE
- Publication number 20200194314
- Publication date Jun 18, 2020
- International Business Machines Corporation
- Yi Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTROLLING ACTIVE FIN HEIGHT OF FINFET DEVICE USING ETCH PROTECTIO...
- Publication number 20200176332
- Publication date Jun 4, 2020
- International Business Machines Corporation
- Yi Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
AREA SELECTIVE CYCLIC DEPOSITION FOR VFET TOP SPACER
- Publication number 20200135893
- Publication date Apr 30, 2020
- International Business Machines Corporation
- ZHENXING BI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED TUNNELING FIELD EFFECT TRANSISTORS
- Publication number 20200119168
- Publication date Apr 16, 2020
- International Business Machines Corporation
- Yi Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL FIELD EFFECT TRANSISTORS WITH SELF ALIGNED CONTACTS
- Publication number 20200098929
- Publication date Mar 26, 2020
- International Business Machines Corporation
- Yi Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
AIRGAP FORMATION IN BEOL INTERCONNECT STRUCTURE USING SIDEWALL IMAG...
- Publication number 20200051850
- Publication date Feb 13, 2020
- International Business Machines Corporation
- KANGGUO CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTROLLING ACTIVE FIN HEIGHT OF FINFET DEVICE USING ETCH PROTECTIO...
- Publication number 20200027796
- Publication date Jan 23, 2020
- International Business Machines Corporation
- Yi Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTROLLING ACTIVE FIN HEIGHT OF FINFET DEVICE USING ETCH PROTECTIO...
- Publication number 20190385916
- Publication date Dec 19, 2019
- International Business Machines Corporation
- Yi Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL WIDTH FINNED SEMICONDUCTOR STRUCTURE
- Publication number 20190371678
- Publication date Dec 5, 2019
- International Business Machines Corporation
- Yi Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
AIRGAP FORMATION IN BEOL INTERCONNECT STRUCTURE USING SIDEWALL IMAG...
- Publication number 20190363004
- Publication date Nov 28, 2019
- International Business Machines Corporation
- KANGGUO CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ASYMMETRIC DUAL GATE FULLY DEPLETED TRANSISTOR
- Publication number 20190280113
- Publication date Sep 12, 2019
- International Business Machines Corporation
- Terry Hook
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Inner spacer formation for nanosheet transistors

Nanosheet transistor bottom isolation

Vertical field effect transistors with self aligned contacts

Transistor having wrap-around source/drain contacts and under-conta...

Vertical field-effect transistor with T-shaped gate

Dual width finned semiconductor structure

Nanosheet transistor bottom isolation

Fuse element resistance enhancement by laser anneal and ion implant...

Source/drain extension regions and air spacers for nanosheet field-...

Controlling active fin height of FinFET device

Airgap formation in BEOL interconnect structure using sidewall imag...

Gate-all-around field-effect transistor devices having source/drain...

Self-aligned tunneling field effect transistors

Cointegration of FET devices with decoupling capacitor

Controlling active fin height of FinFET device using etch protectio...

Area selective cyclic deposition for VFET top spacer

Dual width finned semiconductor structure

Controlling active fin height of FinFET device using etch protectio...

Airgap formation in BEOL interconnect structure using sidewall imag...

Bottom isolation for nanosheet transistors on bulk substrate

Asymmetric dual gate fully depleted transistor

Patents Applicationslast 30 patents

NANOSHEET DEVICE WITH AIR-GAPED SOURCE/DRAIN REGIONS

INNER SPACER FORMATION FOR NANOSHEET TRANSISTORS

Bottom Air Spacer by Oxidation

TRANSISTOR HAVING WRAP-AROUND SOURCE/DRAIN CONTACTS AND UNDER-CONTA...

NANOSHEET TRANSISTOR BOTTOM ISOLATION

TRANSISTOR HAVING WRAP-AROUND SOURCE/DRAIN CONTACTS AND UNDER-CONTA...

VERTICAL FIELD-EFFECT TRANSISTOR WITH T-SHAPED GATE

NANOSHEET TRANSISTOR BOTTOM ISOLATION

FUSE ELEMENT RESISTANCE ENHANCEMENT BY LASER ANNEAL AND ION IMPLANT...

SOURCE/DRAIN EXTENSION REGIONS AND AIR SPACERS FOR NANOSHEET FIELD-...

COINTEGRATION OF FET DEVICES WITH DECOUPLING CAPACITOR

GATE-ALL-AROUND FIELD-EFFECT TRANSISTOR DEVICES HAVING SOURCE/DRAIN...

DUAL WIDTH FINNED SEMICONDUCTOR STRUCTURE

CONTROLLING ACTIVE FIN HEIGHT OF FINFET DEVICE USING ETCH PROTECTIO...

AREA SELECTIVE CYCLIC DEPOSITION FOR VFET TOP SPACER

SELF-ALIGNED TUNNELING FIELD EFFECT TRANSISTORS

VERTICAL FIELD EFFECT TRANSISTORS WITH SELF ALIGNED CONTACTS

AIRGAP FORMATION IN BEOL INTERCONNECT STRUCTURE USING SIDEWALL IMAG...

CONTROLLING ACTIVE FIN HEIGHT OF FINFET DEVICE USING ETCH PROTECTIO...

CONTROLLING ACTIVE FIN HEIGHT OF FINFET DEVICE USING ETCH PROTECTIO...

DUAL WIDTH FINNED SEMICONDUCTOR STRUCTURE

AIRGAP FORMATION IN BEOL INTERCONNECT STRUCTURE USING SIDEWALL IMAG...

ASYMMETRIC DUAL GATE FULLY DEPLETED TRANSISTOR