YI XU

Person

San Jose, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Processing chamber with multiple plasma units
- Patent number 12,230,479
- Issue date Feb 18, 2025
- Applied Materials, Inc.
- Kazuya Daito
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Methods for minimizing feature-to-feature gap fill height variations
- Patent number 12,191,200
- Issue date Jan 7, 2025
- Applied Materials, Inc.
- Jiajie Cen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective tungsten deposition at low temperatures
- Patent number 11,967,525
- Issue date Apr 23, 2024
- Applied Materials, Inc.
- Yi Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Processing chamber with multiple plasma units
- Patent number 11,955,319
- Issue date Apr 9, 2024
- Applied Materials, Inc.
- Kazuya Daito
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Low-temperature plasma pre-clean for selective gap fill
- Patent number 11,955,381
- Issue date Apr 9, 2024
- Applied Materials, Inc.
- Yi Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Deposition of metal films with tungsten liner
- Patent number 11,948,836
- Issue date Apr 2, 2024
- Applied Materials, Inc.
- Yu Lei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective oxidation and simplified pre-clean
- Patent number 11,776,805
- Issue date Oct 3, 2023
- Applied Materials, Inc.
- Bencherki Mebarki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-step pre-clean for selective metal gap fill
- Patent number 11,776,806
- Issue date Oct 3, 2023
- Applied Materials, Inc.
- Xi Cen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual plasma pre-clean for selective gap fill
- Patent number 11,721,542
- Issue date Aug 8, 2023
- Applied Materials, Inc.
- Yi Xu
- B08 - CLEANING
Information Patent Grant
Selective tungsten deposition within trench structures
- Patent number 11,515,200
- Issue date Nov 29, 2022
- Applied Materials, Inc.
- Yi Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Blocker plate for use in a substrate process chamber
- Patent number 11,421,322
- Issue date Aug 23, 2022
- Applied Materials, Inc.
- Xiaoxiong Yuan
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Methods for selective deposition of tungsten atop a dielectric laye...
- Patent number 11,417,568
- Issue date Aug 16, 2022
- Applied Materials, Inc.
- Wei Lei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective tungsten deposition at low temperatures
- Patent number 11,404,313
- Issue date Aug 2, 2022
- Applied Materials, Inc.
- Yi Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-step pre-clean for selective metal gap fill
- Patent number 11,380,536
- Issue date Jul 5, 2022
- Applied Materials, Inc.
- Xi Cen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a metal gapfill
- Patent number 11,355,391
- Issue date Jun 7, 2022
- Applied Materials, Inc.
- Xi Cen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Deposition of metal films with tungsten liner
- Patent number 11,171,045
- Issue date Nov 9, 2021
- Applied Materials, Inc.
- Yu Lei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process integration approach for selective metal via fill
- Patent number 11,164,780
- Issue date Nov 2, 2021
- Applied Materials, Inc.
- Shi You
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods and apparatus for doping engineering and threshold voltage...
- Patent number 10,665,450
- Issue date May 26, 2020
- Applied Materials, Inc.
- Yixiong Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for depositing semiconductor films
- Patent number 10,535,527
- Issue date Jan 14, 2020
- Applied Materials, Inc.
- Yi Xu
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Blocker plate for use in a substrate process chamber
- Patent number 10,508,339
- Issue date Dec 17, 2019
- Applied Materials, Inc.
- Xiaoxiong Yuan
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Aluminum content control of TiAIN films
- Patent number 10,170,321
- Issue date Jan 1, 2019
- Applied Materials, Inc.
- Wenyu Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming low-resistance contacts through integrated proc...
- Patent number 9,947,578
- Issue date Apr 17, 2018
- Applied Materials, Inc.
- Yu Lei
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Patents Applicationslast 30 patents

Information Patent Application
BOTTOM ETCH PROCESS FOR CONTACT PLUG ANCHORING
- Publication number 20250006518
- Publication date Jan 2, 2025
- Applied Materials, Inc.
- Shiyu YUE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL OXIDE PRECLEAN FOR BOTTOM-UP GAPFILL IN MEOL AND BEOL
- Publication number 20240420947
- Publication date Dec 19, 2024
- Applied Materials, Inc.
- Shiyu YUE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Metal Gapfill
- Publication number 20240395614
- Publication date Nov 28, 2024
- Toyota Research Institute, Inc.
- Yi XU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HYBRID MOLYBDENUM FILL SCHEME FOR LOW RESISTIVITY SEMICONDUCTOR APP...
- Publication number 20240355673
- Publication date Oct 24, 2024
- Applied Materials, Inc.
- Wei LEI
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Processing Chamber With Multiple Plasma Units
- Publication number 20240249918
- Publication date Jul 25, 2024
- Applied Materials, Inc.
- Kazuya Daito
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SELECTIVE METAL SELECTIVITY IMPROVEMENT WITH RF PULSING
- Publication number 20240222192
- Publication date Jul 4, 2024
- Applied Materials, Inc.
- Yi Xu
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD OF REDUCING METAL GATE RESISTANCE FOR NEXT GENERATION NMOS D...
- Publication number 20240204061
- Publication date Jun 20, 2024
- Applied Materials, Inc.
- Srinivas Gandikota
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Interlayer for Resistivity Reduction in Metal Deposition Applications
- Publication number 20240194527
- Publication date Jun 13, 2024
- Applied Materials, Inc.
- Sahil Jaykumar PATEL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Gapfill
- Publication number 20240178062
- Publication date May 30, 2024
- Yi XU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED PVD TUNGSTEN LINER AND SEAMLESS CVD TUNGSTEN FILL
- Publication number 20240087955
- Publication date Mar 14, 2024
- Applied Materials, Inc.
- Yi XU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR FORMING METAL GAPFILL WITH LOW RESISTIVITY
- Publication number 20240088071
- Publication date Mar 14, 2024
- Applied Materials, Inc.
- Yi XU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Purge Ring for Reduced Substrate Backside Deposition
- Publication number 20240018648
- Publication date Jan 18, 2024
- Applied Materials, Inc.
- Geraldine VASQUEZ
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
NITROGEN PLASMA TREATMENT FOR BOTTOM-UP GROWTH
- Publication number 20240014072
- Publication date Jan 11, 2024
- Applied Materials, Inc.
- Tsung-Han YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PLASMA ENHANCED TUNGSTEN NUCLEATION FOR LOW RESISTIVITY
- Publication number 20240006236
- Publication date Jan 4, 2024
- Applied Materials, Inc.
- Tsung-Han YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TREATMENT OF TUNGSTEN SURFACE FOR TUNGSTEN GAP-FILL
- Publication number 20230420295
- Publication date Dec 28, 2023
- Applied Materials, Inc.
- Tsung-Han YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GRADIENT OXIDATION AND ETCH FOR PVD METAL AS BOTTOM LINER IN BOTTOM...
- Publication number 20230343643
- Publication date Oct 26, 2023
- Applied Materials, Inc.
- Chih-Hsun HSU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF FIELD-SUPPRESSION CVD TUNGSTEN (W) FILL ON PVD W LINER
- Publication number 20230326791
- Publication date Oct 12, 2023
- Applied Materials, Inc.
- Zhimin QI
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
INTEGRATED CLEANING AND SELECTIVE MOLYBDENUM DEPOSITION PROCESSES
- Publication number 20230323543
- Publication date Oct 12, 2023
- Applied Materials, Inc.
- Tuerxun Ailihumaer
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHODS FOR MINIMIZING FEATURE-TO-FEATURE GAP FILL HEIGHT VARIATIONS
- Publication number 20230098561
- Publication date Mar 30, 2023
- Jiajie CEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE TUNGSTEN DEPOSITION AT LOW TEMPERATURES
- Publication number 20220367264
- Publication date Nov 17, 2022
- Applied Materials, Inc.
- Yi Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Processing Chamber With Multiple Plasma Units
- Publication number 20220319813
- Publication date Oct 6, 2022
- Applied Materials, Inc.
- Kazuya Daito
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
DUAL PLASMA PRE-CLEAN FOR SELECTIVE GAP FILL
- Publication number 20220319837
- Publication date Oct 6, 2022
- Applied Materials, Inc.
- Yi Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-STEP PRE-CLEAN FOR SELECTIVE METAL GAP FILL
- Publication number 20220270871
- Publication date Aug 25, 2022
- Applied Materials, Inc.
- Xi Cen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE TUNGSTEN DEPOSITION WITHIN TRENCH STRUCTURES
- Publication number 20220181201
- Publication date Jun 9, 2022
- Applied Materials, Inc.
- Yi XU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEPOSITION OF METAL FILMS WITH TUNGSTEN LINER
- Publication number 20220028793
- Publication date Jan 27, 2022
- Applied Materials, Inc.
- Yu Lei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW-TEMPERATURE PLASMA PRE-CLEAN FOR SELECTIVE GAP FILL
- Publication number 20210398850
- Publication date Dec 23, 2021
- Applied Materials, Inc.
- Yi Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fluorine-Free Tungsten ALD And Tungsten Selective CVD For Dielectrics
- Publication number 20210384035
- Publication date Dec 9, 2021
- Applied Materials, Inc.
- Ilanit Fisher
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Multi-Step Pre-Clean for Selective Metal Gap Fill
- Publication number 20210351032
- Publication date Nov 11, 2021
- Applied Materials, Inc.
- Xi Cen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR SELECTIVE DEPOSITION OF TUNGSTEN ATOP A DIELECTRIC LAYE...
- Publication number 20210320034
- Publication date Oct 14, 2021
- Applied Materials, Inc.
- Wei LEI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE OXIDATION AND SIMPLIFIED PRE-CLEAN
- Publication number 20210287898
- Publication date Sep 16, 2021
- Applied Materials, Inc.
- Bencherki Mebarki
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Processing chamber with multiple plasma units

Methods for minimizing feature-to-feature gap fill height variations

Selective tungsten deposition at low temperatures

Processing chamber with multiple plasma units

Low-temperature plasma pre-clean for selective gap fill

Deposition of metal films with tungsten liner

Selective oxidation and simplified pre-clean

Multi-step pre-clean for selective metal gap fill

Dual plasma pre-clean for selective gap fill

Selective tungsten deposition within trench structures

Blocker plate for use in a substrate process chamber

Methods for selective deposition of tungsten atop a dielectric laye...

Selective tungsten deposition at low temperatures

Multi-step pre-clean for selective metal gap fill

Method for forming a metal gapfill

Deposition of metal films with tungsten liner

Process integration approach for selective metal via fill

Methods and apparatus for doping engineering and threshold voltage...

Methods for depositing semiconductor films

Blocker plate for use in a substrate process chamber

Aluminum content control of TiAIN films

Methods for forming low-resistance contacts through integrated proc...

Patents Applicationslast 30 patents

BOTTOM ETCH PROCESS FOR CONTACT PLUG ANCHORING

METAL OXIDE PRECLEAN FOR BOTTOM-UP GAPFILL IN MEOL AND BEOL

Method for Metal Gapfill

HYBRID MOLYBDENUM FILL SCHEME FOR LOW RESISTIVITY SEMICONDUCTOR APP...

Processing Chamber With Multiple Plasma Units

SELECTIVE METAL SELECTIVITY IMPROVEMENT WITH RF PULSING

METHOD OF REDUCING METAL GATE RESISTANCE FOR NEXT GENERATION NMOS D...

Interlayer for Resistivity Reduction in Metal Deposition Applications

Method for Gapfill

INTEGRATED PVD TUNGSTEN LINER AND SEAMLESS CVD TUNGSTEN FILL

METHODS FOR FORMING METAL GAPFILL WITH LOW RESISTIVITY

Purge Ring for Reduced Substrate Backside Deposition

NITROGEN PLASMA TREATMENT FOR BOTTOM-UP GROWTH

PLASMA ENHANCED TUNGSTEN NUCLEATION FOR LOW RESISTIVITY

TREATMENT OF TUNGSTEN SURFACE FOR TUNGSTEN GAP-FILL

GRADIENT OXIDATION AND ETCH FOR PVD METAL AS BOTTOM LINER IN BOTTOM...

SELF FIELD-SUPPRESSION CVD TUNGSTEN (W) FILL ON PVD W LINER

INTEGRATED CLEANING AND SELECTIVE MOLYBDENUM DEPOSITION PROCESSES

METHODS FOR MINIMIZING FEATURE-TO-FEATURE GAP FILL HEIGHT VARIATIONS

SELECTIVE TUNGSTEN DEPOSITION AT LOW TEMPERATURES

Processing Chamber With Multiple Plasma Units

DUAL PLASMA PRE-CLEAN FOR SELECTIVE GAP FILL

MULTI-STEP PRE-CLEAN FOR SELECTIVE METAL GAP FILL

SELECTIVE TUNGSTEN DEPOSITION WITHIN TRENCH STRUCTURES

DEPOSITION OF METAL FILMS WITH TUNGSTEN LINER

LOW-TEMPERATURE PLASMA PRE-CLEAN FOR SELECTIVE GAP FILL

Fluorine-Free Tungsten ALD And Tungsten Selective CVD For Dielectrics

Multi-Step Pre-Clean for Selective Metal Gap Fill

METHODS FOR SELECTIVE DEPOSITION OF TUNGSTEN ATOP A DIELECTRIC LAYE...

SELECTIVE OXIDATION AND SIMPLIFIED PRE-CLEAN