Yibo Nian

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Palo Alto, CA, US

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Patents Grantslast 30 patents

Information Patent Grant
Balanced method for programming multi-layer cell memories
- Patent number 8,934,292
- Issue date Jan 13, 2015
- Sandisk 3D LLC
- Xiying Costa
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory cell that employs a selectively fabricated carbon nano-tube...
- Patent number 8,878,235
- Issue date Nov 4, 2014
- Sandisk 3D LLC
- April D. Schricker
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Memory cell with resistance-switching layers including breakdown layer
- Patent number 8,395,927
- Issue date Mar 12, 2013
- Sandisk 3D LLC
- Franz Kreupl
- G11 - INFORMATION STORAGE
Information Patent Grant
Programming a memory cell with a diode in series by applying revers...
- Patent number 7,944,728
- Issue date May 17, 2011
- Sandisk 3D LLC
- Yibo Nian
- B82 - NANO-TECHNOLOGY

Patents Applicationslast 30 patents

Information Patent Application
Balanced Method for Programming Multi-Layer Cell Memories
- Publication number 20120236624
- Publication date Sep 20, 2012
- SanDisk 3D LLC
- Xiying Costa
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY CELL THAT EMPLOYS A SELECTIVELY FABRICATED CARBON NANO-TUBE...
- Publication number 20120001150
- Publication date Jan 5, 2012
- April D. Schricker
- G11 - INFORMATION STORAGE
Information Patent Application
Memory Cell With Resistance-Switching Layers Including Breakdown Layer
- Publication number 20110310656
- Publication date Dec 22, 2011
- Franz Kreupl
- G11 - INFORMATION STORAGE
Information Patent Application
Programming a memory cell with a diode in series by applying revers...
- Publication number 20100157652
- Publication date Jun 24, 2010
- SANDISK 3D LLC
- Yibo Nian
- G11 - INFORMATION STORAGE