Yihuei Zhu

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Hsinchu, TW

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Patents Grantslast 30 patents

Information Patent Grant
Buffer layer in memory cell to prevent metal redeposition
- Patent number 11,532,785
- Issue date Dec 20, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chung-Chiang Min
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
BUFFER LAYER IN MEMORY CELL TO PREVENT METAL REDEPOSITION
- Publication number 20230100433
- Publication date Mar 30, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chung-Chiang Min
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BUFFER LAYER IN MEMORY CELL TO PREVENT METAL REDEPOSITION
- Publication number 20220123207
- Publication date Apr 21, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chung-Chiang Min
- H01 - BASIC ELECTRIC ELEMENTS