Yihwan Kim

Person

Milpitas, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Methods and apparatus for deposition processes
- Patent number 10,731,272
- Issue date Aug 4, 2020
- Applied Materials, Inc.
- Nyi O. Myo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods and apparatus for deposition processes
- Patent number 10,260,164
- Issue date Apr 16, 2019
- Applied Materials, Inc.
- Nyi O. Myo
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of modifying epitaxial growth shape on source drain area of...
- Patent number 9,805,942
- Issue date Oct 31, 2017
- Applied Materials, Inc.
- Yihwan Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming strain-relaxed buffer layers
- Patent number 9,721,792
- Issue date Aug 1, 2017
- Applied Materials, Inc.
- Yi-Chiau Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Halogenated dopant precursors for epitaxy
- Patent number 9,704,708
- Issue date Jul 11, 2017
- Applied Materials, Inc.
- Abhishek Dube
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Methods and apparatus for forming horizontal gate all around device...
- Patent number 9,673,277
- Issue date Jun 6, 2017
- Applied Materials, Inc.
- Adam Brand
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods and apparatus for deposition processes
- Patent number 9,650,726
- Issue date May 16, 2017
- Applied Materials, Inc.
- Nyi O. Myo
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of modifying epitaxial growth shape on source drain area of...
- Patent number 9,530,661
- Issue date Dec 27, 2016
- Applied Materials, Inc.
- Yihwan Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxy of high tensile silicon alloy for tensile strain applications
- Patent number 9,460,918
- Issue date Oct 4, 2016
- Applied Materials, Inc.
- Zhiyuan Ye
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and apparatus for gas delivery
- Patent number 9,200,367
- Issue date Dec 1, 2015
- Applied Materials, Inc.
- Zhiyuan Ye
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Selective epitaxy process control
- Patent number 9,064,960
- Issue date Jun 23, 2015
- Applied Materials, Inc.
- Andrew Lam
- C30 - CRYSTAL GROWTH
Information Patent Grant
Methods for depositing layers having reduced interfacial contamination
- Patent number 9,058,988
- Issue date Jun 16, 2015
- Applied Materials, Inc.
- Jean R. Vatus
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Carbon addition for low resistivity in situ doped silicon epitaxy
- Patent number 9,012,328
- Issue date Apr 21, 2015
- Applied Materials, Inc.
- Zhiyuan Ye
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin formation by epitaxial deposition
- Patent number 8,999,821
- Issue date Apr 7, 2015
- Applied Materials, Inc.
- Adam Brand
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and apparatus for gas delivery
- Patent number 8,927,066
- Issue date Jan 6, 2015
- Applied Materials, Inc.
- Zhiyuan Ye
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of removing contaminants and native oxides from a substrate...
- Patent number 8,728,944
- Issue date May 20, 2014
- Applied Material, Inc.
- Satheesh Kuppurao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxy of high tensile silicon alloy for tensile strain applications
- Patent number 8,652,945
- Issue date Feb 18, 2014
- Applied Materials, Inc.
- Zhiyuan Ye
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective epitaxial germanium growth on silicon-trench fill and in...
- Patent number 8,652,951
- Issue date Feb 18, 2014
- Applied Materials, Inc.
- Yi-Chiau Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Use of CL2 and/or HCL during silicon epitaxial film formation
- Patent number 8,586,456
- Issue date Nov 19, 2013
- Applied Materials, Inc.
- Zhiyuan Ye
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation of in-situ phosphorus doped epitaxial layer containing si...
- Patent number 8,394,196
- Issue date Mar 12, 2013
- Applied Materials, Inc.
- Yihwan Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of selectively depositing an epitaxial layer
- Patent number 8,207,023
- Issue date Jun 26, 2012
- Applied Materials, Inc.
- Zhiyuan Ye
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Methods of forming carbon-containing silicon epitaxial layers
- Patent number 8,029,620
- Issue date Oct 4, 2011
- Applied Materials, Inc.
- Yihwan Kim
- C30 - CRYSTAL GROWTH
Information Patent Grant
Phosphorus containing Si epitaxial layers in N-type source/drain ju...
- Patent number 7,960,236
- Issue date Jun 14, 2011
- Applied Materials, Inc.
- Saurabh Chopra
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Use of CL2 and/or HCL during silicon epitaxial film formation
- Patent number 7,960,256
- Issue date Jun 14, 2011
- Applied Materials, Inc.
- Zhiyuan Ye
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation of epitaxial layer containing silicon and carbon
- Patent number 7,897,495
- Issue date Mar 1, 2011
- Applied Materials, Inc.
- Zhiyuan Ye
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation and treatment of epitaxial layer containing silicon and c...
- Patent number 7,837,790
- Issue date Nov 23, 2010
- Applied Materials, Inc.
- Yihwan Kim
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Selective formation of silicon carbon epitaxial layer
- Patent number 7,776,698
- Issue date Aug 17, 2010
- Applied Materials, Inc.
- Zhiyuan Ye
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming conformal silicon layer for recessed source-drain
- Patent number 7,772,074
- Issue date Aug 10, 2010
- Applied Materials, Inc.
- Zhiyuan Ye
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation and treatment of epitaxial layer containing silicon and c...
- Patent number 7,741,200
- Issue date Jun 22, 2010
- Applied Materials, Inc.
- Yonah Cho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods to fabricate MOSFET devices using a selective deposition pr...
- Patent number 7,737,007
- Issue date Jun 15, 2010
- Applied Materials, Inc.
- Arkadii V. Samoilov
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHODS AND APPARATUS FOR DEPOSITION PROCESSES
- Publication number 20190257000
- Publication date Aug 22, 2019
- Applied Materials, Inc.
- NYI O. MYO
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHODS AND APPARATUS FOR DEPOSITION PROCESSES
- Publication number 20170314158
- Publication date Nov 2, 2017
- NYI O. MYO
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF MODIFYING EPITAXIAL GROWTH SHAPE ON SOURCE DRAIN AREA OF...
- Publication number 20170098547
- Publication date Apr 6, 2017
- Applied Materials, Inc.
- Yihwan KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS AND APPARATUS FOR FORMING HORIZONTAL GATE ALL AROUND DEVICE...
- Publication number 20160111495
- Publication date Apr 21, 2016
- Applied Materials, Inc.
- ADAM BRAND
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MODIFYING EPITAXIAL GROWTH SHAPE ON SOURCE DRAIN AREA OF...
- Publication number 20160042963
- Publication date Feb 11, 2016
- Applied Materials, Inc.
- Yihwan KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HALOGENATED DOPANT PRECURSORS FOR EPITAXY
- Publication number 20160013274
- Publication date Jan 14, 2016
- Applied Materials, Inc.
- Abhishek DUBE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
APPARATUS FOR GAS INJECTION TO EPITAXIAL CHAMBER
- Publication number 20150368796
- Publication date Dec 24, 2015
- Applied Materials, Inc.
- Xuebin LI
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
CARBON ADDITION FOR LOW RESISTIVITY IN SITU DOPED SILICON EPITAXY
- Publication number 20150221730
- Publication date Aug 6, 2015
- Applied Materials, Inc.
- Zhiyuan Ye
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING STRAIN-RELAXED BUFFER LAYERS
- Publication number 20150079803
- Publication date Mar 19, 2015
- Applied Materials, Inc.
- Yi-Chiau HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN FORMATION BY EPITAXIAL DEPOSITION
- Publication number 20150050800
- Publication date Feb 19, 2015
- Adam Brand
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXY OF HIGH TENSILE SILICON ALLOY FOR TENSILE STRAIN APPLICATIONS
- Publication number 20140106547
- Publication date Apr 17, 2014
- Applied Materials, Inc.
- Zhiyuan Ye
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF SEMICONDUCTOR FILM STABILIZATION
- Publication number 20130330911
- Publication date Dec 12, 2013
- Yi-Chiau Huang
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD AND APPARATUS FOR GERMANIUM TIN ALLOY FORMATION BY THERMAL CVD
- Publication number 20130280891
- Publication date Oct 24, 2013
- YIHWAN KIM
- C30 - CRYSTAL GROWTH
Information Patent Application
SELECTIVE EPITAXIAL GERMANIUM GROWTH ON SILICON-TRENCH FILL AND IN...
- Publication number 20130210221
- Publication date Aug 15, 2013
- YI-CHIAU HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND APPARATUS FOR GAS DELIVERY
- Publication number 20120273052
- Publication date Nov 1, 2012
- Applied Materials, Inc.
- ZHIYUAN YE
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD AND APPARATUS FOR GAS DELIVERY
- Publication number 20120272898
- Publication date Nov 1, 2012
- Zhiyuan Ye
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
EPITAXY OF HIGH TENSILE SILICON ALLOY FOR TENSILE STRAIN APPLICATIONS
- Publication number 20120202338
- Publication date Aug 9, 2012
- Applied Materials, Inc.
- Zhiyuan Ye
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CARBON ADDITION FOR LOW RESISTIVITY IN SITU DOPED SILICON EPITAXY
- Publication number 20120193623
- Publication date Aug 2, 2012
- Applied Materials, Inc.
- Zhiyuan Ye
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF REMOVING CONTAMINANTS AND NATIVE OXIDES FROM A SUBSTRATE...
- Publication number 20120034761
- Publication date Feb 9, 2012
- Applied Materials, Inc.
- Satheesh Kuppurao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF SELECTIVELY DEPOSITING AN EPITAXIAL LAYER
- Publication number 20110277934
- Publication date Nov 17, 2011
- Zhiyuan Ye
- C30 - CRYSTAL GROWTH
Information Patent Application
USE OF CL2 AND/OR HCL DURING SILICON EPITAXIAL FILM FORMATION
- Publication number 20110230036
- Publication date Sep 22, 2011
- Applied Materials, Inc.
- Zhiyuan Ye
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS AND APPARATUS FOR DEPOSITION PROCESSES
- Publication number 20110209660
- Publication date Sep 1, 2011
- Applied Materials, Inc.
- NYI O. MYO
- C30 - CRYSTAL GROWTH
Information Patent Application
METHODS OF SELECTIVELY DEPOSITING AN EPITAXIAL LAYER
- Publication number 20110124169
- Publication date May 26, 2011
- Applied Materials, Inc.
- ZHIYUAN YE
- C30 - CRYSTAL GROWTH
Information Patent Application
METHODS FOR DEPOSITING LAYERS HAVING REDUCED INTERFACIAL CONTAMINATION
- Publication number 20100255661
- Publication date Oct 7, 2010
- Applied Materials, Inc.
- JEAN R. VATUS
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
USE OF CL2 AND/OR HCL DURING SILICON EPITAXIAL FILM FORMATION
- Publication number 20100221902
- Publication date Sep 2, 2010
- Applied Materials, Inc.
- Zhiyuan Ye
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING AN EMBEDDED SILICON CARBON EPITAXIAL LAYER
- Publication number 20090215249
- Publication date Aug 27, 2009
- John Boland
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING CONFORMAL SILICON LAYER FOR RECESSED SOURCE-DRAIN
- Publication number 20090104739
- Publication date Apr 23, 2009
- Zhiyuan Ye
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Selective Formation of Silicon Carbon Epitaxial Layer
- Publication number 20090093094
- Publication date Apr 9, 2009
- Zhiyuan Ye
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS TO FABRICATE MOSFET DEVICES USING A SELECTIVE DEPOSITION PR...
- Publication number 20090011578
- Publication date Jan 8, 2009
- ARKADII V. SAMOILOV
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Pre-cleaning of substrates in epitaxy chambers
- Publication number 20080245767
- Publication date Oct 9, 2008
- APPLIED MATERIALS, INC.
- Yihwan Kim
- C30 - CRYSTAL GROWTH

Person

Patents Grantslast 30 patents

Methods and apparatus for deposition processes

Methods and apparatus for deposition processes

Method of modifying epitaxial growth shape on source drain area of...

Method of forming strain-relaxed buffer layers

Halogenated dopant precursors for epitaxy

Methods and apparatus for forming horizontal gate all around device...

Methods and apparatus for deposition processes

Method of modifying epitaxial growth shape on source drain area of...

Epitaxy of high tensile silicon alloy for tensile strain applications

Method and apparatus for gas delivery

Selective epitaxy process control

Methods for depositing layers having reduced interfacial contamination

Carbon addition for low resistivity in situ doped silicon epitaxy

Fin formation by epitaxial deposition

Method and apparatus for gas delivery

Method of removing contaminants and native oxides from a substrate...

Epitaxy of high tensile silicon alloy for tensile strain applications

Selective epitaxial germanium growth on silicon-trench fill and in...

Use of CL2 and/or HCL during silicon epitaxial film formation

Formation of in-situ phosphorus doped epitaxial layer containing si...

Methods of selectively depositing an epitaxial layer

Methods of forming carbon-containing silicon epitaxial layers

Phosphorus containing Si epitaxial layers in N-type source/drain ju...

Use of CL2 and/or HCL during silicon epitaxial film formation

Formation of epitaxial layer containing silicon and carbon

Formation and treatment of epitaxial layer containing silicon and c...

Selective formation of silicon carbon epitaxial layer

Method of forming conformal silicon layer for recessed source-drain

Formation and treatment of epitaxial layer containing silicon and c...

Methods to fabricate MOSFET devices using a selective deposition pr...

Patents Applicationslast 30 patents

METHODS AND APPARATUS FOR DEPOSITION PROCESSES

METHODS AND APPARATUS FOR DEPOSITION PROCESSES

METHOD OF MODIFYING EPITAXIAL GROWTH SHAPE ON SOURCE DRAIN AREA OF...

METHODS AND APPARATUS FOR FORMING HORIZONTAL GATE ALL AROUND DEVICE...

METHOD OF MODIFYING EPITAXIAL GROWTH SHAPE ON SOURCE DRAIN AREA OF...

HALOGENATED DOPANT PRECURSORS FOR EPITAXY

APPARATUS FOR GAS INJECTION TO EPITAXIAL CHAMBER

CARBON ADDITION FOR LOW RESISTIVITY IN SITU DOPED SILICON EPITAXY

METHOD OF FORMING STRAIN-RELAXED BUFFER LAYERS

FIN FORMATION BY EPITAXIAL DEPOSITION

EPITAXY OF HIGH TENSILE SILICON ALLOY FOR TENSILE STRAIN APPLICATIONS

METHOD OF SEMICONDUCTOR FILM STABILIZATION

METHOD AND APPARATUS FOR GERMANIUM TIN ALLOY FORMATION BY THERMAL CVD

SELECTIVE EPITAXIAL GERMANIUM GROWTH ON SILICON-TRENCH FILL AND IN...

METHOD AND APPARATUS FOR GAS DELIVERY

METHOD AND APPARATUS FOR GAS DELIVERY

EPITAXY OF HIGH TENSILE SILICON ALLOY FOR TENSILE STRAIN APPLICATIONS

CARBON ADDITION FOR LOW RESISTIVITY IN SITU DOPED SILICON EPITAXY

METHOD OF REMOVING CONTAMINANTS AND NATIVE OXIDES FROM A SUBSTRATE...

METHODS OF SELECTIVELY DEPOSITING AN EPITAXIAL LAYER

USE OF CL2 AND/OR HCL DURING SILICON EPITAXIAL FILM FORMATION

METHODS AND APPARATUS FOR DEPOSITION PROCESSES

METHODS OF SELECTIVELY DEPOSITING AN EPITAXIAL LAYER

METHODS FOR DEPOSITING LAYERS HAVING REDUCED INTERFACIAL CONTAMINATION

USE OF CL2 AND/OR HCL DURING SILICON EPITAXIAL FILM FORMATION

METHOD OF FORMING AN EMBEDDED SILICON CARBON EPITAXIAL LAYER

METHOD OF FORMING CONFORMAL SILICON LAYER FOR RECESSED SOURCE-DRAIN

Selective Formation of Silicon Carbon Epitaxial Layer

METHODS TO FABRICATE MOSFET DEVICES USING A SELECTIVE DEPOSITION PR...

Pre-cleaning of substrates in epitaxy chambers