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Yimin Guo
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San Jose, CA, US
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Patents Grants
last 30 patents
Information
Patent Grant
Magnetoresistive element having a nano-current-channel structure
Patent number
11,957,063
Issue date
Apr 9, 2024
Yimin Guo
G11 - INFORMATION STORAGE
Information
Patent Grant
Perpendicular MTJ element having a cube-textured reference layer an...
Patent number
11,910,721
Issue date
Feb 20, 2024
Yimin Guo
G11 - INFORMATION STORAGE
Information
Patent Grant
STT-SOT hybrid magnetoresistive element and manufacture thereof
Patent number
11,854,589
Issue date
Dec 26, 2023
Yimin Guo
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Methods of forming perpendicular magnetoresistive elements using sa...
Patent number
11,805,702
Issue date
Oct 31, 2023
Yimin Guo
G11 - INFORMATION STORAGE
Information
Patent Grant
Bottom-pinned magnetic random access memory having a composite SOT...
Patent number
11,600,660
Issue date
Mar 7, 2023
Rongfu Xiao
G11 - INFORMATION STORAGE
Information
Patent Grant
Making a memoristic array with an implanted hard mask
Patent number
11,569,440
Issue date
Jan 31, 2023
Yimin Guo
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Magnetoresistive element having a giant interfacial perpendicular m...
Patent number
11,545,290
Issue date
Jan 3, 2023
Yimin Guo
G11 - INFORMATION STORAGE
Information
Patent Grant
Ultra-fast magnetic random access memory having a composite SOT-MTJ...
Patent number
11,527,708
Issue date
Dec 13, 2022
Yimin Guo
G11 - INFORMATION STORAGE
Information
Patent Grant
Magnetoresistive element having a giant interfacial perpendicular m...
Patent number
11,450,467
Issue date
Sep 20, 2022
Yimin Guo
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Composite seed structure to improve PMA for perpendicular magnetic...
Patent number
11,450,466
Issue date
Sep 20, 2022
Yimin Guo
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Magnetoresistive element having an adjacent-bias layer and a toggle...
Patent number
11,444,239
Issue date
Sep 13, 2022
Yimin Guo
G11 - INFORMATION STORAGE
Information
Patent Grant
Composite multi-stack seed layer to improve PMA for perpendicular m...
Patent number
11,316,102
Issue date
Apr 26, 2022
Yimin Guo
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method of manufacturing magnetic memory devices
Patent number
11,271,034
Issue date
Mar 8, 2022
Yimin Guo
G11 - INFORMATION STORAGE
Information
Patent Grant
MRAM having spin hall effect writing and method of making the same
Patent number
11,257,862
Issue date
Feb 22, 2022
Yimin Guo
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Composite multi-stack seed layer to improve PMA for perpendicular m...
Patent number
11,251,367
Issue date
Feb 15, 2022
Yimin Guo
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method to make MRAM with small footprint
Patent number
11,114,611
Issue date
Sep 7, 2021
Yimin Guo
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Synthetic magnetic pinning element having strong antiferromagnetic...
Patent number
11,081,154
Issue date
Aug 3, 2021
Rongfu Xiao
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Perpendicular magnetoresistive elements
Patent number
11,043,631
Issue date
Jun 22, 2021
Yimin Guo
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Magnetoresistive element having a perpendicular AFM structure
Patent number
11,038,100
Issue date
Jun 15, 2021
Yimin Guo
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Spin transfer MRAM element having a voltage bias control
Patent number
10,953,319
Issue date
Mar 23, 2021
Yimin Guo
G06 - COMPUTING CALCULATING COUNTING
Information
Patent Grant
Magnetoresistive element having a novel cap multilayer
Patent number
10,937,958
Issue date
Mar 2, 2021
Yimin Guo
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
MRAM having novel self-referenced read method
Patent number
10,783,943
Issue date
Sep 22, 2020
Yimin Guo
G11 - INFORMATION STORAGE
Information
Patent Grant
Perpendicular magnetoresistive elements
Patent number
10,672,977
Issue date
Jun 2, 2020
Yimin Guo
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Electric field assisted perpendicular STT-MRAM
Patent number
10,608,170
Issue date
Mar 31, 2020
Shanghai CiYu Information Technologies Co., LTD
Yimin Guo
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method of making a magnetoresistive element
Patent number
10,522,589
Issue date
Dec 31, 2019
Shanghai CiYu Information Technologies Co., Ltd.
Yimin Guo
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Patterned magnetoresistive (MR) device with adjacent flux absorbing...
Patent number
9,910,107
Issue date
Mar 6, 2018
Headway Technologies, Inc.
Yuchen Zhou
B82 - NANO-TECHNOLOGY
Information
Patent Grant
Spin transfer MRAM device with reduced coefficient of MTJ resistanc...
Patent number
9,865,321
Issue date
Jan 9, 2018
Headway Technologies, Inc.
Yimin Guo
G11 - INFORMATION STORAGE
Information
Patent Grant
Method of making a spin-transfer-torque magnetoresistive random acc...
Patent number
9,741,929
Issue date
Aug 22, 2017
T3Memory, Inc.
Yimin Guo
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method of manufacturing magnetoresistive element(s)
Patent number
9,666,793
Issue date
May 30, 2017
T3Memory USA, Inc., a California US corporation
Yimin Guo
G11 - INFORMATION STORAGE
Information
Patent Grant
Guided transport of magnetically labeled biological molecules and c...
Patent number
9,656,271
Issue date
May 23, 2017
Headway Technologies, Inc.
Yuchen Zhou
B03 - SEPARATION OF SOLID MATERIALS USING LIQUIDS OR USING PNEUMATIC TABLES O...
Patents Applications
last 30 patents
Information
Patent Application
MAGNETORESISTIVE ELEMENT HAVING A NANO-CURRENT-CHANNEL STURCTURE
Publication number
20230067295
Publication date
Mar 2, 2023
YIMIN GUO
G11 - INFORMATION STORAGE
Information
Patent Application
PERPENDICULAR MTJ ELEMENT HAVING A SOFT-MAGNETIC ADJACENT LAYER AND...
Publication number
20230039108
Publication date
Feb 9, 2023
Yimin Guo
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
PERPENDICULAR MTJ ELEMENT HAVING A CUBE-TEXTURED REFERENCE LAYER AN...
Publication number
20230012255
Publication date
Jan 12, 2023
YIMIN GUO
G11 - INFORMATION STORAGE
Information
Patent Application
METHODS OF FORMING PERPENDICULAR MAGNETORESISTIVE ELEMENTS USING SA...
Publication number
20220359818
Publication date
Nov 10, 2022
YIMIN GUO
G11 - INFORMATION STORAGE
Information
Patent Application
MAGNETORESISTIVE ELEMENT HAVING AN ADJACENT-BIAS LAYER AND A TOGGLE...
Publication number
20220278270
Publication date
Sep 1, 2022
YIMIN GUO
G11 - INFORMATION STORAGE
Information
Patent Application
COMPOSITE RECORDING STRUCTURE FOR AN IMPROVED WRITE PROFERMANCE
Publication number
20220246836
Publication date
Aug 4, 2022
Yimin Guo
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
MAGNETORESISTIVE ELEMENT HAVING A COMPOSITE RECORDING STRUCTURE
Publication number
20220238799
Publication date
Jul 28, 2022
Yimin Guo
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
MAGNETORESISTIVE ELEMENT HAVING A GIANT INTERFACIAL PERPENDICULAR M...
Publication number
20220165470
Publication date
May 26, 2022
Yimin Guo
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
MAGNETORESISTIVE ELEMENT HAVING A GIANT INTERFACIAL PERPENDICULAR M...
Publication number
20220148785
Publication date
May 12, 2022
YIMIN GUO
G11 - INFORMATION STORAGE
Information
Patent Application
MAKING A MEMORISTIC ARRAY WITH AN IMPLANTED HARD MASK
Publication number
20220059758
Publication date
Feb 24, 2022
Shanghai CiYu Information Technologies Co., LTD
Yimin Guo
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
COMPOSITE SEED STRUCTURE TO IMPROVE PMA FOR PERPENDICULAR MAGNETIC...
Publication number
20220059270
Publication date
Feb 24, 2022
Yimin Guo
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
MAGNETORESISTIVE ELEMENT HAVING A SIDEWALL-CURRENT-CHANNEL STRUCTURE
Publication number
20220045267
Publication date
Feb 10, 2022
Yimin Guo
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
STT-SOT HYBRID MAGNETORESISTIVE ELEMENT AND MANUFACTURE THEREOF
Publication number
20220044718
Publication date
Feb 10, 2022
YIMIN GUO
G11 - INFORMATION STORAGE
Information
Patent Application
COMPOSITE MULTI-STACK SEED LAYER TO IMPROVE PMA FOR PERPENDICULAR M...
Publication number
20210343934
Publication date
Nov 4, 2021
Yimin Guo
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
ULTRA-FAST MAGNETIC RANDOM ACCESS MEMORY HAVING A COMPOSITE SOT-MTJ...
Publication number
20210328134
Publication date
Oct 21, 2021
YIMIN GUO
G11 - INFORMATION STORAGE
Information
Patent Application
BOTTOM-PINNED MAGNETIC RANDOM ACCESS MEMORY HAVING A COMPOSITE SOT...
Publication number
20210327960
Publication date
Oct 21, 2021
RONGFU XIAO
G11 - INFORMATION STORAGE
Information
Patent Application
COMPOSITE MULTI-STACK SEED LAYER TO IMPROVE PMA FOR PERPENDICULAR M...
Publication number
20210273157
Publication date
Sep 2, 2021
Yimin GUO
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
SYNTHETIC MAGNEETIC PINNING ELEMENT HAVING STRONG ANTIFERROMAGNETIC...
Publication number
20210233576
Publication date
Jul 29, 2021
RONGFU XIAO
G11 - INFORMATION STORAGE
Information
Patent Application
A MAGNETIC RANDOM ACCESS MEMORY STORAGE ELEMENT AND MAGNETIC RANDOM...
Publication number
20210193735
Publication date
Jun 24, 2021
Shanghai CiYu Information Technologies Co., LTD
YIMIN GUO
G11 - INFORMATION STORAGE
Information
Patent Application
MAGNETORESISTIVE ELEMENT HAVING A PERPENDICULAR AFM STRUCTURE
Publication number
20210159401
Publication date
May 27, 2021
Yimin GUO
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
PERPENDICULAR MAGNETORESISTIVE ELEMENTS
Publication number
20200220071
Publication date
Jul 9, 2020
T3 Memory, Inc.
YIMIN GUO
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
MAGNETORESISTIVE ELEMENT HAVING A NOVEL CAP MULTILAYER
Publication number
20200083437
Publication date
Mar 12, 2020
T3 Memory, Inc.Shanghai CiYu Information Technologies Co., Ltd. c/o Rongfu Xiao
YIMIN GUO
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
METHOD TO MAKE MAGNETIC RAMDOM ACCESSS MEMROY ARRAY WITH SMALL FOOT...
Publication number
20180033957
Publication date
Feb 1, 2018
Shanghai CiYu Information Technologies Co., LTD
Yun Sen Zhang
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Method of Making a Spin-Transfer-Torque Magnetoresistive Random Acc...
Publication number
20160336508
Publication date
Nov 17, 2016
T3MEMORY, INC.
YIMIN GUO
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Spin Transfer MRAM Device with Reduced Coefficient of MTJ Resistanc...
Publication number
20160329087
Publication date
Nov 10, 2016
HEADWAY TECHNOLOGIES, INC.
Yimin Guo
G11 - INFORMATION STORAGE
Information
Patent Application
MAGNETORESISTIVE ELEMENT HAVING A NOVEL RECORDING MULTILAYER
Publication number
20160315250
Publication date
Oct 27, 2016
T3Memory, Inc.
YIMIN GUO
G11 - INFORMATION STORAGE
Information
Patent Application
METHOD TO MAKE MRAM WITH SMALL FOOTPRINT
Publication number
20160293835
Publication date
Oct 6, 2016
T3MEMORY, INC.
YIMIN GUO
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
NOVEL PERPENDICULAR MAGNETORESISTIVE ELEMENTS
Publication number
20160260890
Publication date
Sep 8, 2016
T3MEMORY, INC.
YIMIN GUO
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
MRAM HAVING SPIN HALL EFFECT WRITING AND METHOD OF MAKING THE SAME
Publication number
20160225982
Publication date
Aug 4, 2016
T3MEMORY, INC.
YIMIN GUO
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
AN IMPROVED METHOD TO MAKE OF FABRICATING IC/MRAM USING OXYGEN ION...
Publication number
20160172585
Publication date
Jun 16, 2016
T3Memory, Inc.
YIMIN GUO
H01 - BASIC ELECTRIC ELEMENTS