Yiming Huai

Person

Milpitas, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Magnetic memory element including perpendicular enhancement layers...
- Patent number 12,133,471
- Issue date Oct 29, 2024
- Avalanche Technology, Inc.
- Zihui Wang
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Multilayered seed for perpendicular magnetic structure including an...
- Patent number 12,133,395
- Issue date Oct 29, 2024
- Avalanche Technology, Inc.
- Zihui Wang
- G11 - INFORMATION STORAGE
Information Patent Grant
Multilayered seed for perpendicular magnetic structure including an...
- Patent number 11,785,784
- Issue date Oct 10, 2023
- Avalanche Technology, Inc.
- Zihui Wang
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory element incorporating dual perpendicular enhancemen...
- Patent number 11,758,822
- Issue date Sep 12, 2023
- Avalanche Technology, Inc.
- Zihui Wang
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Memory system having thermally stable perpendicular magneto tunnel...
- Patent number 11,678,586
- Issue date Jun 13, 2023
- Avalanche Technology, Inc.
- Yiming Huai
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory element incorporating dual perpendicular enhancemen...
- Patent number 11,417,836
- Issue date Aug 16, 2022
- Avalanche Technology, Inc.
- Yiming Huai
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Multilayered seed for perpendicular magnetic structure
- Patent number 11,348,971
- Issue date May 31, 2022
- Avalanche Technology, Inc.
- Zihui Wang
- G11 - INFORMATION STORAGE
Information Patent Grant
Multilayered seed for perpendicular magnetic structure
- Patent number 10,950,659
- Issue date Mar 16, 2021
- Avalanche Technology, Inc.
- Zihui Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic memory element incorporating perpendicular enhancement layer
- Patent number 10,910,555
- Issue date Feb 2, 2021
- Avalanche Technology, Inc.
- Zihui Wang
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetic random access memory with perpendicular enhancement layer
- Patent number 10,727,400
- Issue date Jul 28, 2020
- Avalanche Technology, Inc.
- Zihui Wang
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Multilayered seed structure for magnetic memory element including a...
- Patent number 10,720,469
- Issue date Jul 21, 2020
- Avalanche Technology, Inc.
- Zihui Wang
- G11 - INFORMATION STORAGE
Information Patent Grant
Perpendicular magnetic tunnel junction (pMTJ) with in-plane magneto...
- Patent number RE47975
- Issue date May 5, 2020
- Avalanche Technology, Inc.
- Jing Zhang
Information Patent Grant
Magnetic memory element including magnesium perpendicular enhanceme...
- Patent number 10,490,737
- Issue date Nov 26, 2019
- Avalanche Technology, Inc.
- Zihui Wang
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Multilayered seed structure for magnetic memory element including a...
- Patent number 10,438,997
- Issue date Oct 8, 2019
- Avalanche Technology, Inc.
- Zihui Wang
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic random access memory with ultrathin reference layer
- Patent number 10,361,362
- Issue date Jul 23, 2019
- Avalanche Technology, Inc.
- Huadong Gan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic memory element with multilayered seed structure
- Patent number 10,347,691
- Issue date Jul 9, 2019
- Avalanche Technology, Inc.
- Yiming Huai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic memory element including oxide/metal composite layers form...
- Patent number 10,090,456
- Issue date Oct 2, 2018
- Avalanche Technology, Inc.
- Yiming Huai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic memory element with perpendicular enhancement layer
- Patent number 10,079,338
- Issue date Sep 18, 2018
- Avalanche Technology, Inc.
- Yiming Huai
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetic structure with multilayered seed
- Patent number 10,050,083
- Issue date Aug 14, 2018
- Avalanche Technology, Inc.
- Huadong Gan
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory element with iridium anti-ferromagnetic coupling layer
- Patent number 10,032,979
- Issue date Jul 24, 2018
- Avalanche Technology, Inc.
- Huadong Gan
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Perpendicular magnetic fixed layer with high anisotropy
- Patent number 10,008,663
- Issue date Jun 26, 2018
- Avalanche Technology, Inc.
- Xiaojie Hao
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic random access memory with ultrathin reference layer
- Patent number 9,871,191
- Issue date Jan 16, 2018
- Avalanche Technology, Inc.
- Yuchen Zhou
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic random access memory with ultrathin reference layer
- Patent number 9,871,190
- Issue date Jan 16, 2018
- Avalanche Technology, Inc.
- Huadong Gan
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory element with composite fixed layer
- Patent number 9,831,421
- Issue date Nov 28, 2017
- Avalanche Technology, Inc.
- Zihui Wang
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Multilayered seed structure for perpendicular MTJ memory element
- Patent number 9,793,319
- Issue date Oct 17, 2017
- Avalanche Technology, Inc.
- Huadong Gan
- G11 - INFORMATION STORAGE
Information Patent Grant
Landing pad in peripheral circuit for magnetic random access memory...
- Patent number 9,793,318
- Issue date Oct 17, 2017
- Avalanche Technology, Inc.
- Kimihiro Satoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Programming of non-volatile memory subjected to high temperature ex...
- Patent number 9,793,003
- Issue date Oct 17, 2017
- Avalanche Technology, Inc.
- Ebrahim Abedifard
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory element with composite perpendicular enhancement layer
- Patent number 9,780,300
- Issue date Oct 3, 2017
- Avalanche Technology, Inc.
- Yuchen Zhou
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Perpendicular magnetic memory element having magnesium oxide cap layer
- Patent number 9,748,471
- Issue date Aug 29, 2017
- Avalanche Technology, Inc.
- Yuchen Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Perpendicular magnetic tunnel junction (pMTJ) with in-plane magneto...
- Patent number 9,679,625
- Issue date Jun 13, 2017
- Avalanche Technology, Inc.
- Jing Zhang
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
Multilayered Seed for Perpendicular Magnetic Structure Including an...
- Publication number 20230413577
- Publication date Dec 21, 2023
- Avalanche Technology, Inc.
- Zihui Wang
- G11 - INFORMATION STORAGE
Information Patent Application
Magnetic Memory Element Including Perpendicular Enhancement Layers...
- Publication number 20230403945
- Publication date Dec 14, 2023
- Avalanche Technology, Inc.
- Zihui Wang
- B82 - NANO-TECHNOLOGY
Information Patent Application
Magnetic Memory Element Incorporating Dual Perpendicular Enhancemen...
- Publication number 20220376172
- Publication date Nov 24, 2022
- Avalanche Technology, Inc.
- Zihui Wang
- B82 - NANO-TECHNOLOGY
Information Patent Application
Multilayered Seed for Perpendicular Magnetic Structure Including an...
- Publication number 20220293677
- Publication date Sep 15, 2022
- Avalanche Technology, Inc.
- Zihui Wang
- G11 - INFORMATION STORAGE
Information Patent Application
Multilayered Seed for Perpendicular Magnetic Structure
- Publication number 20210167126
- Publication date Jun 3, 2021
- Avalanche Technology, Inc.
- Zihui Wang
- G11 - INFORMATION STORAGE
Information Patent Application
Magnetic Memory Element Incorporating Dual Perpendicular Enhancemen...
- Publication number 20210159399
- Publication date May 27, 2021
- Avalanche Technology, Inc.
- Yiming Huai
- B82 - NANO-TECHNOLOGY
Information Patent Application
Multilayered Seed for Perpendicular Magnetic Structure
- Publication number 20200312905
- Publication date Oct 1, 2020
- Avalanche Technology, Inc.
- Zihui Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Magnetic Memory Element Incorporating Perpendicular Enhancement Layer
- Publication number 20200227628
- Publication date Jul 16, 2020
- Avalanche Technology, Inc.
- Zihui Wang
- B82 - NANO-TECHNOLOGY
Information Patent Application
Multilayered Seed for Magnetic Structure
- Publication number 20200043981
- Publication date Feb 6, 2020
- Avalanche Technology, Inc.
- Zihui Wang
- G11 - INFORMATION STORAGE
Information Patent Application
Multilayered Seed for Magnetic Structure
- Publication number 20190198566
- Publication date Jun 27, 2019
- Avalanche Technology, Inc.
- Zihui Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC RANDOM ACCESS MEMORY WITH PERPENDICULAR ENHANCEMENT LAYER
- Publication number 20190198752
- Publication date Jun 27, 2019
- Avalanche Technology, Inc.
- Zihui Wang
- B82 - NANO-TECHNOLOGY
Information Patent Application
Selector Device Incorporating Conductive Clusters for Memory Applic...
- Publication number 20190172871
- Publication date Jun 6, 2019
- Avalanche Technology, Inc.
- Hongxin Yang
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY SYSTEM HAVING THERMALLY STABLE PERPENDICULAR MAGNETO TUNNEL...
- Publication number 20190148622
- Publication date May 16, 2019
- Avalanche Technology, Inc.
- Yiming Huai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC RANDOM ACCESS MEMORY WITH PERPENDICULAR ENHANCEMENT LAYER
- Publication number 20190013461
- Publication date Jan 10, 2019
- Avalanche Technology, Inc.
- Zihui Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Magnetic Memory Element with Multilayered Seed Structure
- Publication number 20190006414
- Publication date Jan 3, 2019
- Avalanche Technology, Inc.
- Yiming Huai
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC RANDOM ACCESS MEMORY WITH ULTRATHIN REFERENCE LAYER
- Publication number 20180090675
- Publication date Mar 29, 2018
- Avalanche Technology, Inc.
- Huadong Gan
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC RANDOM ACCESS MEMORY WITH PERPENDICULAR ENHANCEMENT LAYER
- Publication number 20180083187
- Publication date Mar 22, 2018
- Avalanche Technology, Inc.
- Yiming Huai
- B82 - NANO-TECHNOLOGY
Information Patent Application
MAGNETIC RANDOM ACCESS MEMORY WITH PERPENDICULAR ENHANCEMENT LAYER
- Publication number 20180076384
- Publication date Mar 15, 2018
- Avalanche Technology, Inc.
- Huadong Gan
- B82 - NANO-TECHNOLOGY
Information Patent Application
Magnetic Random Access Memory with Multilayered Seed Structure
- Publication number 20170352701
- Publication date Dec 7, 2017
- Avalanche Technology, Inc.
- Huadong Gan
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC RANDOM ACCESS MEMORY WITH PERPENDICULAR ENHANCEMENT LAYER
- Publication number 20170324027
- Publication date Nov 9, 2017
- Avalanche Technology, Inc.
- Yiming Huai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC RANDOM ACCESS MEMORY WITH PERPENDICULAR ENHANCEMENT LAYER
- Publication number 20170288137
- Publication date Oct 5, 2017
- Avalanche Technology, Inc.
- Zihui Wang
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC RANDOM ACCESS MEMORY HAVING PERPENDICULAR ENHANCEMENT LAYER
- Publication number 20170162781
- Publication date Jun 8, 2017
- Avalanche Technology, Inc.
- Yuchen Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC RANDOM ACCESS MEMORY WITH PERPENDICULAR ENHANCEMENT LAYER
- Publication number 20170084826
- Publication date Mar 23, 2017
- Avalanche Technology, Inc.
- Yuchen Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Programming of Non-Volatile Memory Subjected to High Temperature Ex...
- Publication number 20170076818
- Publication date Mar 16, 2017
- Avalanche Technology, Inc.
- Ebrahim Abedifard
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC RANDOM ACCESS MEMORY WITH MULTILAYERED SEED STRUCTURE
- Publication number 20170033156
- Publication date Feb 2, 2017
- Avalanche Technology, Inc.
- Huadong Gan
- G11 - INFORMATION STORAGE
Information Patent Application
Perpendicular MRAM with Magnet
- Publication number 20160284761
- Publication date Sep 29, 2016
- Avalanche Technology, Inc.
- Yuchen Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC RANDOM ACCESS MEMORY HAVING PERPENDICULAR ENHANCEMENT LAYER
- Publication number 20160284762
- Publication date Sep 29, 2016
- Avalanche Technology, Inc.
- Zihui Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Landing Pad in Peripheral Circuit for Magnetic Random Access Memory...
- Publication number 20160276406
- Publication date Sep 22, 2016
- Avalanche Technology, Inc.
- Kimihiro Satoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC RANDOM ACCESS MEMORY WITH PERPENDICULAR INTERFACIAL ANISOT...
- Publication number 20160211443
- Publication date Jul 21, 2016
- Avalanche Technology, Inc.
- Huadong Gan
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC RANDOM ACCESS MEMORY WITH PERPENDICULAR ENHANCEMENT LAYER
- Publication number 20160204341
- Publication date Jul 14, 2016
- Avalanche Technology, Inc.
- Huadong Gan
- G11 - INFORMATION STORAGE

Yiming Huai

Person

Patents Grantslast 30 patents

Magnetic memory element including perpendicular enhancement layers...

Multilayered seed for perpendicular magnetic structure including an...

Multilayered seed for perpendicular magnetic structure including an...

Magnetic memory element incorporating dual perpendicular enhancemen...

Memory system having thermally stable perpendicular magneto tunnel...

Magnetic memory element incorporating dual perpendicular enhancemen...

Multilayered seed for perpendicular magnetic structure

Multilayered seed for perpendicular magnetic structure

Magnetic memory element incorporating perpendicular enhancement layer

Magnetic random access memory with perpendicular enhancement layer

Multilayered seed structure for magnetic memory element including a...

Perpendicular magnetic tunnel junction (pMTJ) with in-plane magneto...

Magnetic memory element including magnesium perpendicular enhanceme...

Multilayered seed structure for magnetic memory element including a...

Magnetic random access memory with ultrathin reference layer

Magnetic memory element with multilayered seed structure

Magnetic memory element including oxide/metal composite layers form...

Magnetic memory element with perpendicular enhancement layer

Magnetic structure with multilayered seed

Magnetic memory element with iridium anti-ferromagnetic coupling layer

Perpendicular magnetic fixed layer with high anisotropy

Magnetic random access memory with ultrathin reference layer

Magnetic random access memory with ultrathin reference layer

Magnetic memory element with composite fixed layer

Multilayered seed structure for perpendicular MTJ memory element

Landing pad in peripheral circuit for magnetic random access memory...

Programming of non-volatile memory subjected to high temperature ex...

Magnetic memory element with composite perpendicular enhancement layer

Perpendicular magnetic memory element having magnesium oxide cap layer

Perpendicular magnetic tunnel junction (pMTJ) with in-plane magneto...

Patents Applicationslast 30 patents

Multilayered Seed for Perpendicular Magnetic Structure Including an...

Magnetic Memory Element Including Perpendicular Enhancement Layers...

Magnetic Memory Element Incorporating Dual Perpendicular Enhancemen...

Multilayered Seed for Perpendicular Magnetic Structure Including an...

Multilayered Seed for Perpendicular Magnetic Structure

Magnetic Memory Element Incorporating Dual Perpendicular Enhancemen...

Multilayered Seed for Perpendicular Magnetic Structure

Magnetic Memory Element Incorporating Perpendicular Enhancement Layer

Multilayered Seed for Magnetic Structure

Multilayered Seed for Magnetic Structure

MAGNETIC RANDOM ACCESS MEMORY WITH PERPENDICULAR ENHANCEMENT LAYER

Selector Device Incorporating Conductive Clusters for Memory Applic...

MEMORY SYSTEM HAVING THERMALLY STABLE PERPENDICULAR MAGNETO TUNNEL...

MAGNETIC RANDOM ACCESS MEMORY WITH PERPENDICULAR ENHANCEMENT LAYER

Magnetic Memory Element with Multilayered Seed Structure

MAGNETIC RANDOM ACCESS MEMORY WITH ULTRATHIN REFERENCE LAYER

MAGNETIC RANDOM ACCESS MEMORY WITH PERPENDICULAR ENHANCEMENT LAYER

MAGNETIC RANDOM ACCESS MEMORY WITH PERPENDICULAR ENHANCEMENT LAYER

Magnetic Random Access Memory with Multilayered Seed Structure

MAGNETIC RANDOM ACCESS MEMORY WITH PERPENDICULAR ENHANCEMENT LAYER

MAGNETIC RANDOM ACCESS MEMORY WITH PERPENDICULAR ENHANCEMENT LAYER

MAGNETIC RANDOM ACCESS MEMORY HAVING PERPENDICULAR ENHANCEMENT LAYER

MAGNETIC RANDOM ACCESS MEMORY WITH PERPENDICULAR ENHANCEMENT LAYER

Programming of Non-Volatile Memory Subjected to High Temperature Ex...

MAGNETIC RANDOM ACCESS MEMORY WITH MULTILAYERED SEED STRUCTURE

Perpendicular MRAM with Magnet

MAGNETIC RANDOM ACCESS MEMORY HAVING PERPENDICULAR ENHANCEMENT LAYER

Landing Pad in Peripheral Circuit for Magnetic Random Access Memory...

MAGNETIC RANDOM ACCESS MEMORY WITH PERPENDICULAR INTERFACIAL ANISOT...

MAGNETIC RANDOM ACCESS MEMORY WITH PERPENDICULAR ENHANCEMENT LAYER