Yin-Kai Liao

Person

Taipei, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Image sensor with passivation layer for dark current reduction
- Patent number 12,166,054
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hsiang-Lin Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Germanium-based sensor with junction-gate field effect transistor a...
- Patent number 12,148,853
- Issue date Nov 19, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jhy-Jyi Sze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing an optical sensor
- Patent number 12,125,934
- Issue date Oct 22, 2024
- Taiwan Semiconductor Manufacturing Company Ltd.
- Yi-Shin Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor sensor and methods thereof
- Patent number 12,015,099
- Issue date Jun 18, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yin-Kai Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Passivation layer for epitaxial semiconductor process
- Patent number 11,908,900
- Issue date Feb 20, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yin-Kai Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Image sensor and manufacturing method thereof
- Patent number 11,901,393
- Issue date Feb 13, 2024
- Taiwan Semiconductor Manufacturing Company Ltd.
- Jhy-Jyi Sze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Germanium-based sensor with junction-gate field effect transistor a...
- Patent number 11,855,237
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jhy-Jyi Sze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Image sensor with passivation layer for dark current reduction
- Patent number 11,848,345
- Issue date Dec 19, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hsiang-Lin Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Germanium-based sensor with junction-gate field effect transistor a...
- Patent number 11,600,737
- Issue date Mar 7, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jhy-Jyi Sze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Passivation layer for epitaxial semiconductor process
- Patent number 11,508,817
- Issue date Nov 22, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yin-Kai Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Image sensor having enhanced backside illumination quantum efficiency
- Patent number 10,269,848
- Issue date Apr 23, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yin-Kai Liao
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Grant
Virtual content management
- Patent number 9,983,844
- Issue date May 29, 2018
- International Business Machines Corporation
- Hsinchi Chang
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Grant
Method of manufacturing image sensor having enhanced backside illum...
- Patent number 9,640,582
- Issue date May 2, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yin-Kai Liao
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Grant
Image sensor having enhanced backside illumination quantum efficiency
- Patent number 9,041,841
- Issue date May 26, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yin-Kai Liao
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Grant
Local oxidation of silicon processes with reduced lateral oxidation
- Patent number 8,778,717
- Issue date Jul 15, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ru-Shang Hsiao
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...

Patents Applicationslast 30 patents

Information Patent Application
Germanium-Based Sensor with Junction-Gate Field Effect Transistor a...
- Publication number 20240387766
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jhy-Jyi Sze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR IMAGE SENSOR AND METHOD FOR FORMING THE SAME
- Publication number 20240387587
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing company Ltd.
- JHY-JYI SZE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING AN OPTICAL SENSOR
- Publication number 20240372028
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing company Ltd.
- YI-SHIN CHU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR SENSOR AND METHODS THEREOF
- Publication number 20240339555
- Publication date Oct 10, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yin-Kai LIAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR FABRICATING IMAGE SENSOR
- Publication number 20240145520
- Publication date May 2, 2024
- Taiwan Semiconductor Manufacturing company Ltd.
- JHY-JYI SZE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PASSIVATION LAYER FOR EPITAXIAL SEMICONDUCTOR PROCESS
- Publication number 20240136401
- Publication date Apr 25, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yin-Kai Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Germanium-Based Sensor with Junction-Gate Field Effect Transistor a...
- Publication number 20240105877
- Publication date Mar 28, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jhy-Jyi Sze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IMAGE SENSOR WITH PASSIVATION LAYER FOR DARK CURRENT REDUCTION
- Publication number 20230387159
- Publication date Nov 30, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hsiang-Lin Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IMAGE SENSOR STRUCTURE
- Publication number 20230343885
- Publication date Oct 26, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hsiang-Lin Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Germanium-Based Sensor with Junction-Gate Field Effect Transistor a...
- Publication number 20230163231
- Publication date May 25, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jhy-Jyi Sze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR IMAGE SENSOR AND METHOD FOR FORMING THE SAME
- Publication number 20230069164
- Publication date Mar 2, 2023
- Taiwan Semiconductor Manufacturing company Ltd.
- JHY-JYI SZE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PASSIVATION LAYER FOR EPITAXIAL SEMICONDUCTOR PROCESS
- Publication number 20220367638
- Publication date Nov 17, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yin-Kai Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
OPTICAL SENSOR AND METHOD OF MANUFACTURING THE SAME
- Publication number 20220310871
- Publication date Sep 29, 2022
- Taiwan Semiconductor Manufacturing company Ltd.
- YI-SHIN CHU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Germanium-Based Sensor with Junction-Gate Field Effect Transistor a...
- Publication number 20220302336
- Publication date Sep 22, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jhy-Jyi Sze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IMAGE SENSOR AND MANUFACTURING METHOD THEREOF
- Publication number 20220271080
- Publication date Aug 25, 2022
- Taiwan Semiconductor Manufacturing company Ltd.
- JHY-JYI SZE
- G01 - MEASURING TESTING
Information Patent Application
IMAGE SENSOR WITH PASSIVATION LAYER FOR DARK CURRENT REDUCTION
- Publication number 20220102410
- Publication date Mar 31, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hsiang-Lin Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR SENSOR AND METHODS THEREOF
- Publication number 20220037552
- Publication date Feb 3, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yin-Kai LIAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PASSIVATION LAYER FOR EPITAXIAL SEMICONDUCTOR PROCESS
- Publication number 20210376086
- Publication date Dec 2, 2021
- Taiwan Semiconductor Manufacturing Co., LTD
- Yin-Kai Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VIRTUAL CONTENT MANAGEMENT
- Publication number 20170235536
- Publication date Aug 17, 2017
- International Business Machines Corporation
- Hsinchi Chang
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
Method of Manufacturing Image Sensor Having Enhanced Backside Illum...
- Publication number 20170236863
- Publication date Aug 17, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yin-Kai Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Image Sensor Having Enhanced Backside Illumination Quantum Efficiency
- Publication number 20150279886
- Publication date Oct 1, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yin-Kai Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Local Oxidation of Silicon Processes with Reduced Lateral Oxidation
- Publication number 20110230002
- Publication date Sep 22, 2011
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ru-Shang Hsiao
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Application
Image Sensor Having Enhanced Backside Illumination Quantum Efficiency
- Publication number 20100091163
- Publication date Apr 15, 2010
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yin-Kai Liao
- H04 - ELECTRIC COMMUNICATION TECHNIQUE

Yin-Kai Liao

Person

Patents Grantslast 30 patents

Image sensor with passivation layer for dark current reduction

Germanium-based sensor with junction-gate field effect transistor a...

Method of manufacturing an optical sensor

Semiconductor sensor and methods thereof

Passivation layer for epitaxial semiconductor process

Image sensor and manufacturing method thereof

Germanium-based sensor with junction-gate field effect transistor a...

Image sensor with passivation layer for dark current reduction

Germanium-based sensor with junction-gate field effect transistor a...

Passivation layer for epitaxial semiconductor process

Image sensor having enhanced backside illumination quantum efficiency

Virtual content management

Method of manufacturing image sensor having enhanced backside illum...

Image sensor having enhanced backside illumination quantum efficiency

Local oxidation of silicon processes with reduced lateral oxidation

Patents Applicationslast 30 patents

Germanium-Based Sensor with Junction-Gate Field Effect Transistor a...

SEMICONDUCTOR IMAGE SENSOR AND METHOD FOR FORMING THE SAME

METHOD OF MANUFACTURING AN OPTICAL SENSOR

SEMICONDUCTOR SENSOR AND METHODS THEREOF

METHODS FOR FABRICATING IMAGE SENSOR

PASSIVATION LAYER FOR EPITAXIAL SEMICONDUCTOR PROCESS

Germanium-Based Sensor with Junction-Gate Field Effect Transistor a...

IMAGE SENSOR WITH PASSIVATION LAYER FOR DARK CURRENT REDUCTION

IMAGE SENSOR STRUCTURE

Germanium-Based Sensor with Junction-Gate Field Effect Transistor a...

SEMICONDUCTOR IMAGE SENSOR AND METHOD FOR FORMING THE SAME

PASSIVATION LAYER FOR EPITAXIAL SEMICONDUCTOR PROCESS

OPTICAL SENSOR AND METHOD OF MANUFACTURING THE SAME

Germanium-Based Sensor with Junction-Gate Field Effect Transistor a...

IMAGE SENSOR AND MANUFACTURING METHOD THEREOF

IMAGE SENSOR WITH PASSIVATION LAYER FOR DARK CURRENT REDUCTION

SEMICONDUCTOR SENSOR AND METHODS THEREOF

PASSIVATION LAYER FOR EPITAXIAL SEMICONDUCTOR PROCESS

VIRTUAL CONTENT MANAGEMENT

Method of Manufacturing Image Sensor Having Enhanced Backside Illum...

Image Sensor Having Enhanced Backside Illumination Quantum Efficiency

Local Oxidation of Silicon Processes with Reduced Lateral Oxidation

Image Sensor Having Enhanced Backside Illumination Quantum Efficiency