Yin-Li Wang

Person

New Taipei, TW

People

Patents Grantslast 30 patents

Information Patent Grant
FinFET fabrication methods
- Patent number 12,068,392
- Issue date Aug 20, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chun Hsiung Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field-effect transistor device and method
- Patent number 11,735,430
- Issue date Aug 22, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yin Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET fabrication methods
- Patent number 11,276,766
- Issue date Mar 15, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chun Hsiung Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field-effect transistor device and method
- Patent number 10,964,548
- Issue date Mar 30, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yin Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Overlay mark and method of fabricating the same
- Patent number 10,705,436
- Issue date Jul 7, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd
- Cheng-Yu Wen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field-effect transistor structure and method for forming the same
- Patent number 10,504,898
- Issue date Dec 10, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yin Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field-effect transistor device and method
- Patent number 10,497,577
- Issue date Dec 3, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yin Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET fabrication methods
- Patent number 10,468,500
- Issue date Nov 5, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chun Hsiung Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic device with easy assembly function and related computer...
- Patent number 9,535,460
- Issue date Jan 3, 2017
- Wistron Corporation
- Shan-Wei Jheng
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Dual-SiGe epitaxy for MOS devices
- Patent number 9,466,716
- Issue date Oct 11, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yin-Pin Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Communication system and control circuit therein
- Patent number 8,903,018
- Issue date Dec 2, 2014
- Wistron Corp.
- Yin-Tsai Wang
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Grant
Adjustment module, electronic device with the adjustment module, an...
- Patent number 8,744,381
- Issue date Jun 3, 2014
- Wistron Corporation
- Yin-Tsai Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual-SiGe epitaxy for MOS devices
- Patent number 7,750,338
- Issue date Jul 6, 2010
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yin-Pin Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Composite stressors with variable element atomic concentrations in...
- Patent number 7,605,407
- Issue date Oct 20, 2009
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yin-Ping Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Body contact formation in partially depleted silicon on insulator d...
- Patent number 7,453,121
- Issue date Nov 18, 2008
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shui-Ming Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Write margin improvement for SRAM cells with SiGe stressors
- Patent number 7,449,753
- Issue date Nov 11, 2008
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yin-Pin Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with asymmetric pocket implants
- Patent number 7,253,062
- Issue date Aug 7, 2007
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yin-Pin Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a high performance MOSFET device featuring fo...
- Patent number 7,129,547
- Issue date Oct 31, 2006
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yin-Pin Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with asymmetric pocket implants
- Patent number 7,009,248
- Issue date Mar 7, 2006
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yin-Pin Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a semiconductor device having an improved...
- Patent number 6,960,512
- Issue date Nov 1, 2005
- Taiwain Semiconductor Manufacturing Company, Ltd.
- Shui-Ming Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a high performance MOSFET device featuring fo...
- Patent number 6,902,980
- Issue date Jun 7, 2005
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yin-Pin Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming semiconductor substrate with convex shaped activ...
- Patent number 6,656,845
- Issue date Dec 2, 2003
- Taiwan Semiconductor Manufacturing Co., Ltd
- Hsin Yi Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for improved cleaning in HDP-CVD process with reduced NF3 usage
- Patent number 6,584,987
- Issue date Jul 1, 2003
- Taiwan Semiconductor Manufacturing Company
- Yi-Lung Cheng
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Template for measuring edge width and method of using
- Patent number 6,499,222
- Issue date Dec 31, 2002
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hung-Ju Chien
- G01 - MEASURING TESTING
Information Patent Grant
Method of forming shallow trench isolation structure
- Patent number 6,277,709
- Issue date Aug 21, 2001
- Vanguard International Semiconductor Corp.
- Yin-Pin Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ar-based si-rich oxynitride film for dual damascene and/or contact...
- Patent number 6,235,653
- Issue date May 22, 2001
- Taiwan Semiconductor Manufacturing Company
- Hung-Ju Chien
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
FINFET FABRICATION METHODS
- Publication number 20240371970
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chun Hsiung TSAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Enlarged Backside Contact
- Publication number 20230060786
- Publication date Mar 2, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Bwo-Ning Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET FABRICATION METHODS
- Publication number 20220208986
- Publication date Jun 30, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chun Hsiung TSAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fin Field-Effect Transistor Device And Method
- Publication number 20210210354
- Publication date Jul 8, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yin Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
OVERLAY MARK AND METHOD OF FABRICATING THE SAME
- Publication number 20200103763
- Publication date Apr 2, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Cheng-Yu WEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET FABRICATION METHODS
- Publication number 20200066869
- Publication date Feb 27, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chun Hsiung TSAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fin Field-Effect Transistor Device And Method
- Publication number 20200006077
- Publication date Jan 2, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yin Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fin Field-Effect Transistor Device And Method
- Publication number 20190067027
- Publication date Feb 28, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yin Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN FIELD-EFFECT TRANSISTOR STRUCTURE AND METHOD FOR FORMING THE SAME
- Publication number 20190067283
- Publication date Feb 28, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yin WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WIRELESS COMMUNICATION DEVICE
- Publication number 20160087663
- Publication date Mar 24, 2016
- Wistron Corporation
- Yin-Tsai Wang
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Application
ELECTRONIC DEVICE WITH EASY ASSEMBLY FUNCTION AND RELATED COMPUTER...
- Publication number 20150070823
- Publication date Mar 12, 2015
- Wistron Corporation
- Shan-Wei Jheng
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
COMMUNICATION SYSTEM AND CONTROL CIRCUIT THEREIN
- Publication number 20140023124
- Publication date Jan 23, 2014
- Yin-Tsai WANG
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Application
ADJUSTMENT MODULE, ELECTRONIC DEVICE WITH THE ADJUSTMENT MODULE, AN...
- Publication number 20130088390
- Publication date Apr 11, 2013
- Yin-Tsai WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Dual-SiGe Epitaxy for MOS Devices
- Publication number 20100240186
- Publication date Sep 23, 2010
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yin-Pin Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Dual-SiGe epitaxy for MOS devices
- Publication number 20080128746
- Publication date Jun 5, 2008
- Yin-Pin Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Composite stressors in MOS devices
- Publication number 20080054347
- Publication date Mar 6, 2008
- Yin-Pin Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Write margin improvement for SRAM cells with SiGe stressors
- Publication number 20070235817
- Publication date Oct 11, 2007
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yin-Pin Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device with asymmetric pocket implants
- Publication number 20060081925
- Publication date Apr 20, 2006
- Yin-Pin Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Depletion-merged FET design in bulk silicon
- Publication number 20050275022
- Publication date Dec 15, 2005
- Shui-Ming Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Structure and method for extraction of parasitic junction capacitan...
- Publication number 20050260776
- Publication date Nov 24, 2005
- Taiwan Semiconductor Manufacturing Co., LTD
- Yin-Pin Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method and structure for CMOS device with stress relaxed by ion imp...
- Publication number 20050186722
- Publication date Aug 25, 2005
- Kuan-Lun Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Depletion-merged FET design in bulk silicon
- Publication number 20050145881
- Publication date Jul 7, 2005
- Shui-Ming Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Body contact formation in partially depleted silicon on insulator d...
- Publication number 20050133831
- Publication date Jun 23, 2005
- Shui-Ming Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of fabricating a high performance MOSFET device featuring fo...
- Publication number 20050095799
- Publication date May 5, 2005
- Yin-Pin Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device with asymmetric pocket implants
- Publication number 20050073013
- Publication date Apr 7, 2005
- Yin-Pin Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device having improved short channel effects, and met...
- Publication number 20050026342
- Publication date Feb 3, 2005
- Ka-Hing Fung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of fabricating a high performance MOSFET device featuring fo...
- Publication number 20040248369
- Publication date Dec 9, 2004
- Taiwan Semicondutor Manufacturing Co.
- Yin-Pin Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for forming semiconductor substrate with convex shaped activ...
- Publication number 20030157759
- Publication date Aug 21, 2003
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hsin Yi Lee
- H01 - BASIC ELECTRIC ELEMENTS

Yin-Li Wang

Person

Patents Grantslast 30 patents

FinFET fabrication methods

Fin field-effect transistor device and method

FinFET fabrication methods

Fin field-effect transistor device and method

Overlay mark and method of fabricating the same

Fin field-effect transistor structure and method for forming the same

Fin field-effect transistor device and method

FinFET fabrication methods

Electronic device with easy assembly function and related computer...

Dual-SiGe epitaxy for MOS devices

Communication system and control circuit therein

Adjustment module, electronic device with the adjustment module, an...

Dual-SiGe epitaxy for MOS devices

Composite stressors with variable element atomic concentrations in...

Body contact formation in partially depleted silicon on insulator d...

Write margin improvement for SRAM cells with SiGe stressors

Semiconductor device with asymmetric pocket implants

Method of fabricating a high performance MOSFET device featuring fo...

Semiconductor device with asymmetric pocket implants

Method for manufacturing a semiconductor device having an improved...

Method of fabricating a high performance MOSFET device featuring fo...

Method for forming semiconductor substrate with convex shaped activ...

Method for improved cleaning in HDP-CVD process with reduced NF3 usage

Template for measuring edge width and method of using

Method of forming shallow trench isolation structure

Ar-based si-rich oxynitride film for dual damascene and/or contact...

Patents Applicationslast 30 patents

FINFET FABRICATION METHODS

Enlarged Backside Contact

FINFET FABRICATION METHODS

Fin Field-Effect Transistor Device And Method

OVERLAY MARK AND METHOD OF FABRICATING THE SAME

FINFET FABRICATION METHODS

Fin Field-Effect Transistor Device And Method

Fin Field-Effect Transistor Device And Method

FIN FIELD-EFFECT TRANSISTOR STRUCTURE AND METHOD FOR FORMING THE SAME

WIRELESS COMMUNICATION DEVICE

ELECTRONIC DEVICE WITH EASY ASSEMBLY FUNCTION AND RELATED COMPUTER...

COMMUNICATION SYSTEM AND CONTROL CIRCUIT THEREIN

ADJUSTMENT MODULE, ELECTRONIC DEVICE WITH THE ADJUSTMENT MODULE, AN...

Dual-SiGe Epitaxy for MOS Devices

Dual-SiGe epitaxy for MOS devices

Composite stressors in MOS devices

Write margin improvement for SRAM cells with SiGe stressors

Semiconductor device with asymmetric pocket implants

Depletion-merged FET design in bulk silicon

Structure and method for extraction of parasitic junction capacitan...

Method and structure for CMOS device with stress relaxed by ion imp...

Depletion-merged FET design in bulk silicon

Body contact formation in partially depleted silicon on insulator d...

Method of fabricating a high performance MOSFET device featuring fo...

Semiconductor device with asymmetric pocket implants

Semiconductor device having improved short channel effects, and met...

Method of fabricating a high performance MOSFET device featuring fo...

Method for forming semiconductor substrate with convex shaped activ...