Yinan CHEN

Person

Taipei City, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor structure and method of making the same
- Patent number 7,982,315
- Issue date Jul 19, 2011
- Nanya Technology Corp.
- Yinan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a contact structure to avoid open issue
- Patent number 7,799,676
- Issue date Sep 21, 2010
- Nanya Technology Corp.
- Yinan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for pre-retaining CB opening
- Patent number 7,144,799
- Issue date Dec 5, 2006
- Nan Ya Technology Corporation
- Yinan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and composite hard mask for forming deep trenches in a semic...
- Patent number 7,138,338
- Issue date Nov 21, 2006
- Nanya Technology Corporation
- Chang-Rong Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for eliminating inverse narrow width effects in the fabricat...
- Patent number 7,078,315
- Issue date Jul 18, 2006
- Nanya Technology Corp.
- Ming-Cheng Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Isolation structure for trench capacitors and fabrication method th...
- Patent number 7,041,567
- Issue date May 9, 2006
- Nanya Technology Corp.
- Yinan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench-capacitor DRAM cell having a folded gate conductor
- Patent number 6,909,136
- Issue date Jun 21, 2005
- Nanya Technology Corp.
- Yinan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating contact holes on a semiconductor chip
- Patent number 6,797,611
- Issue date Sep 28, 2004
- Nanya Technology Corp.
- Kuo-Chien Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating buried strap out-diffusions of vertical tran...
- Patent number 6,762,099
- Issue date Jul 13, 2004
- Nanya Technology Corp.
- Hsu Yu-Sheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a gate structure
- Patent number 6,753,225
- Issue date Jun 22, 2004
- Nanya Technology Corp.
- Chin-Yuan Hsiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating asymmetric inner structure in contacts or tr...
- Patent number 6,750,116
- Issue date Jun 15, 2004
- Nanya Technology Corp.
- Yinan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a crown capacitor for a DRAM cell
- Patent number 6,140,179
- Issue date Oct 31, 2000
- Nanya Technology Corporation
- Yinan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a DRAM capacitor
- Patent number 6,133,089
- Issue date Oct 17, 2000
- Nanya Technology Corporation
- Tse Yao Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatus for carrying substrates processed in an etching process a...
- Patent number 6,117,268
- Issue date Sep 12, 2000
- Nanya Technology Corporation
- Wen Chi Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating crown capacitor by using oxynitride mask
- Patent number 6,093,601
- Issue date Jul 25, 2000
- Nanya Technology Corporation
- Hsin-Chuan Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of crown capacitor rounding by oxidant dipping process
- Patent number 6,071,790
- Issue date Jun 6, 2000
- Nanya Technology Corporation
- Hsin-Chuan Tsai
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD OF MAKING THE SAME
- Publication number 20090256264
- Publication date Oct 15, 2009
- Yinan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING A CONTACT STRUCTURE TO AVOID OPEN ISSUE
- Publication number 20080194101
- Publication date Aug 14, 2008
- NANYA TECHNOLOGY CORP.
- Yinan CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of manufacturing DRAM capable of avoiding bit line leakage
- Publication number 20060292775
- Publication date Dec 28, 2006
- NANYA TECHNOLOGY CORPORATION
- Ping Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for pre-retaining CB opening
- Publication number 20060228845
- Publication date Oct 12, 2006
- Yinan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING TRENCH ISOLATION FOR TRENCH-CAPACITOR DRAM DE...
- Publication number 20060154435
- Publication date Jul 13, 2006
- Hsiu-Chun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Etchant composition and the use thereof
- Publication number 20060049132
- Publication date Mar 9, 2006
- NANYA TECHNOLOGY CORPORATION
- Chang-Rong Wu
- C09 - DYES PAINTS POLISHES NATURAL RESINS ADHESIVES MISCELLANEOUS COMPOSITION...
Information Patent Application
Method and composite hard mask for forming deep trenches in a semic...
- Publication number 20050215061
- Publication date Sep 29, 2005
- NANYA TECHNOLOGY CORPORATION
- Chang-Rong Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ISOLATION STRUCTURE FOR TRENCH CAPACITORS AND FABRICATION METHOD TH...
- Publication number 20050153506
- Publication date Jul 14, 2005
- Yinan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH-CAPACITOR DRAM CELL HAVING A FOLDED GATE CONDUCTOR
- Publication number 20050012131
- Publication date Jan 20, 2005
- Yinan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for eliminating inverse narrow width effects in the fabricat...
- Publication number 20050003608
- Publication date Jan 6, 2005
- Ming-Cheng Chang
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Semiconductor structure and method of making the same

Method of manufacturing a contact structure to avoid open issue

Method for pre-retaining CB opening

Method and composite hard mask for forming deep trenches in a semic...

Method for eliminating inverse narrow width effects in the fabricat...

Isolation structure for trench capacitors and fabrication method th...

Trench-capacitor DRAM cell having a folded gate conductor

Method of fabricating contact holes on a semiconductor chip

Method for fabricating buried strap out-diffusions of vertical tran...

Method of forming a gate structure

Method for fabricating asymmetric inner structure in contacts or tr...

Method of forming a crown capacitor for a DRAM cell

Method for fabricating a DRAM capacitor

Apparatus for carrying substrates processed in an etching process a...

Method of fabricating crown capacitor by using oxynitride mask

Method of crown capacitor rounding by oxidant dipping process

Patents Applicationslast 30 patents

SEMICONDUCTOR STRUCTURE AND METHOD OF MAKING THE SAME

METHOD OF MANUFACTURING A CONTACT STRUCTURE TO AVOID OPEN ISSUE

Method of manufacturing DRAM capable of avoiding bit line leakage

Method for pre-retaining CB opening

METHOD OF FABRICATING TRENCH ISOLATION FOR TRENCH-CAPACITOR DRAM DE...

Etchant composition and the use thereof

Method and composite hard mask for forming deep trenches in a semic...

ISOLATION STRUCTURE FOR TRENCH CAPACITORS AND FABRICATION METHOD TH...

TRENCH-CAPACITOR DRAM CELL HAVING A FOLDED GATE CONDUCTOR

Method for eliminating inverse narrow width effects in the fabricat...