Ying Cai

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Shanghai, CN

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Patents Grantslast 30 patents

Information Patent Grant
Method for making JFET device, JFET device and layout structure the...
- Patent number 11,257,936
- Issue date Feb 22, 2022
- Shanghai Huahong Grace Semiconductor Manufacturing Corporation
- Ying Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
RF LDMOS device and fabrication method thereof
- Patent number 9,136,350
- Issue date Sep 15, 2015
- Shanghai Huahong Grace Semiconductor Manufacturing Corporation
- Zhengliang Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Parasitic lateral PNP transistor and manufacturing method thereof
- Patent number 8,907,453
- Issue date Dec 9, 2014
- Shanghai Hua Nec Electronics Co., Ltd.
- Fan Chen
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD FOR MAKING JFET DEVICE, JFET DEVICE AND LAYOUT STRUCTURE THE...
- Publication number 20210175349
- Publication date Jun 10, 2021
- Shanghai Huahong Grace Semiconductor Manufacturing Corporation
- Ying CAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RF LDMOS DEVICE AND FABRICATION METHOD THEREOF
- Publication number 20140131796
- Publication date May 15, 2014
- Shanghai Huahong Grace Semiconductor Manufacturing Corporation
- Zhengliang Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PARASITIC LATERAL PNP TRANSISTOR AND MANUFACTURING METHOD THEREOF
- Publication number 20130119384
- Publication date May 16, 2013
- SHANGHAI HUA NEC ELECTRONICS CO., LTD.
- Fan Chen
- H01 - BASIC ELECTRIC ELEMENTS