Ying-Keung Leung

Person

Hong Kong, HK

People

Patents Grantslast 30 patents

Information Patent Grant
Contacts for highly scaled transistors
- Patent number 11,276,763
- Issue date Mar 15, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Carlos H. Diaz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contacts for highly scaled transistors
- Patent number 10,497,792
- Issue date Dec 3, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Carlos H. Diaz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contacts for highly scaled transistors
- Patent number 9,941,374
- Issue date Apr 10, 2018
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Carlos H. Diaz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-gate device and method of fabrication thereof
- Patent number 9,899,387
- Issue date Feb 20, 2018
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuo-Cheng Ching
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contacts for highly scaled transistors
- Patent number 9,508,858
- Issue date Nov 29, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Carlos H. Diaz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Recessed gate structure with reduced current leakage and overlap ca...
- Patent number 7,012,014
- Issue date Mar 14, 2006
- Taiwan Semiconductor Manufacturing Co., Ltd
- Da-Wen Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to form a self-aligned CMOS inverter using vertical device i...
- Patent number 6,747,314
- Issue date Jun 8, 2004
- Chartered Semiconductor Manufacturing Ltd.
- Ravi Sundaresan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming variable-K gate dielectric
- Patent number 6,709,934
- Issue date Mar 23, 2004
- Chartered Semiconductor Manufacturing Ltd.
- James Yong Meng Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to form self-aligned source/drain CMOS device on insulated s...
- Patent number 6,541,327
- Issue date Apr 1, 2003
- Chartered Semiconductor Manufacturing Ltd.
- Lap Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to form and/or isolate vertical transistors
- Patent number 6,511,884
- Issue date Jan 28, 2003
- Chartered Semiconductor Manufacturing Ltd.
- Elgin Quek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to form an air-gap under the edges of a gate electrode by us...
- Patent number 6,468,877
- Issue date Oct 22, 2002
- Chartered Semiconductor Manufacturing Ltd.
- Yelehanka Ramachandramurthy Pradeep
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to form a self-aligned CMOS inverter using vertical device i...
- Patent number 6,461,900
- Issue date Oct 8, 2002
- Chartered Semiconductor Manufacturing Ltd.
- Ravi Sundaresan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to form an inverted staircase STI structure by etch-depositi...
- Patent number 6,461,887
- Issue date Oct 8, 2002
- Chartered Semiconductor Manufacturing Ltd.
- Yelehanka Ramachandramurthy Pradeep
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to form very high mobility vertical channel transistor by se...
- Patent number 6,455,377
- Issue date Sep 24, 2002
- Chartered Semiconductor Manufacturing Ltd.
- Jia Zhen Zheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to form a vertical transistor by selective epitaxial growth...
- Patent number 6,440,800
- Issue date Aug 27, 2002
- Chartered Semiconductor Manufacturing Ltd.
- James Yong Meng Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to control the channel length of a vertical transistor by fi...
- Patent number 6,436,770
- Issue date Aug 20, 2002
- Chartered Semiconductor Manufacturing Ltd.
- Ying Keung Leung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming variable-K gate dielectric
- Patent number 6,436,774
- Issue date Aug 20, 2002
- Chartered Semiconductor Manufacturing Ltd.
- James Yong Meng Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a self aligned S/D CMOS device on insulated...
- Patent number 6,417,054
- Issue date Jul 9, 2002
- Chartered Semiconductor Manufacturing Ltd.
- Jia Zhen Zheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to form low-overlap-capacitance transistors by forming micro...
- Patent number 6,417,056
- Issue date Jul 9, 2002
- Chartered Semiconductor Manufacturing Ltd.
- Elgin Quek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a transistor gate dielectric with high-K and low...
- Patent number 6,406,945
- Issue date Jun 18, 2002
- Chartered Semiconductor Manufacturing Ltd.
- James Yong Meng Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to form a recessed source drain on a trench side wall with a...
- Patent number 6,380,088
- Issue date Apr 30, 2002
- Chartered Semiconductor Manufacturing, Inc.
- Lap Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to form an elevated S/D CMOS device by contacting S/D throug...
- Patent number 6,306,714
- Issue date Oct 23, 2001
- Chartered Semiconductor Manufacturing Inc.
- Yang Pan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to form smaller channel with CMOS device by isotropic etchin...
- Patent number 6,306,715
- Issue date Oct 23, 2001
- Chartered Semiconductor Manufacturing Ltd.
- Lap Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to form transistors with multiple threshold voltages (VT) us...
- Patent number 6,300,177
- Issue date Oct 9, 2001
- Chartered Semiconductor Manufacturing Inc.
- Ravi Sundaresan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a lightly doped source and drain structure using...
- Patent number 6,156,598
- Issue date Dec 5, 2000
- Chartered Semiconductor Manufacturing Ltd.
- Mei Sheng Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabrication of a raised source/drain transistor
- Patent number 6,100,161
- Issue date Aug 8, 2000
- Chartered Semiconductor Manufacturing Ltd.
- Xing Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to form CoSi.sub.2 on shallow junction by Si implantation
- Patent number 6,096,647
- Issue date Aug 1, 2000
- Chartered Semiconductor Manufacturing Ltd.
- Hong Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a raised source and drain without using selectiv...
- Patent number 6,090,691
- Issue date Jul 18, 2000
- Chartered Semiconductor Manufacturing Ltd.
- Ting Cheong Ang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Contacts for Highly Scaled Transistors
- Publication number 20200083341
- Publication date Mar 12, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Carlos H. Diaz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Contacts for Highly Scaled Transistors
- Publication number 20180219078
- Publication date Aug 2, 2018
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Carlos H. Diaz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Multi-Gate Device and Method of Fabrication Thereof
- Publication number 20170141112
- Publication date May 18, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuo-Cheng Ching
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Contacts for Highly Scaled Transistors
- Publication number 20170077253
- Publication date Mar 16, 2017
- Taiwan Semiconductor Manufacturing Co., LTD
- Carlos H. Diaz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Contacts For Highly Scaled Transistors
- Publication number 20160141423
- Publication date May 19, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Carlos H. Diaz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Recessed gate structure with reduced current leakage and overlap ca...
- Publication number 20050127433
- Publication date Jun 16, 2005
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Da-Wen Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method to form a self-aligned CMOS inverter using vertical device i...
- Publication number 20030075758
- Publication date Apr 24, 2003
- Chartered Semiconductor Manufacturing Ltd.
- Ravi Sundaresan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for forming variable-K gate dielectric
- Publication number 20020173106
- Publication date Nov 21, 2002
- Chartered Semiconductor Manufacturing Ltd.
- James Yong Meng Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING A SELF ALIGNED S/D CMOS DEVICE ON INSULATED...
- Publication number 20020102798
- Publication date Aug 1, 2002
- Chartered Semiconductor Manufacturing Ltd.
- Jia Zhen Zheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for forming variable-K gate dielectric
- Publication number 20020100947
- Publication date Aug 1, 2002
- Chartered Semiconductor Manufacturing Inc.
- James Yong Meng Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method to form a vertical transistor by selective epitaxial growth...
- Publication number 20020102784
- Publication date Aug 1, 2002
- Chartered Semiconductor Manufacturing Ltd.
- James Yong Meng Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method to form very high mobility vertical channel transistor by se...
- Publication number 20020098655
- Publication date Jul 25, 2002
- Chartered Semiconductor Manufacturing Ltd.
- Jia Zhen Zheng
- H01 - BASIC ELECTRIC ELEMENTS

Ying-Keung Leung

Person

Patents Grantslast 30 patents

Contacts for highly scaled transistors

Contacts for highly scaled transistors

Contacts for highly scaled transistors

Multi-gate device and method of fabrication thereof

Contacts for highly scaled transistors

Recessed gate structure with reduced current leakage and overlap ca...

Method to form a self-aligned CMOS inverter using vertical device i...

Method for forming variable-K gate dielectric

Method to form self-aligned source/drain CMOS device on insulated s...

Method to form and/or isolate vertical transistors

Method to form an air-gap under the edges of a gate electrode by us...

Method to form a self-aligned CMOS inverter using vertical device i...

Method to form an inverted staircase STI structure by etch-depositi...

Method to form very high mobility vertical channel transistor by se...

Method to form a vertical transistor by selective epitaxial growth...

Method to control the channel length of a vertical transistor by fi...

Method for forming variable-K gate dielectric

Method for fabricating a self aligned S/D CMOS device on insulated...

Method to form low-overlap-capacitance transistors by forming micro...

Method for forming a transistor gate dielectric with high-K and low...

Method to form a recessed source drain on a trench side wall with a...

Method to form an elevated S/D CMOS device by contacting S/D throug...

Method to form smaller channel with CMOS device by isotropic etchin...

Method to form transistors with multiple threshold voltages (VT) us...

Method for forming a lightly doped source and drain structure using...

Method of fabrication of a raised source/drain transistor

Method to form CoSi.sub.2 on shallow junction by Si implantation

Method for forming a raised source and drain without using selectiv...

Patents Applicationslast 30 patents

Contacts for Highly Scaled Transistors

Contacts for Highly Scaled Transistors

Multi-Gate Device and Method of Fabrication Thereof

Contacts for Highly Scaled Transistors

Contacts For Highly Scaled Transistors

Recessed gate structure with reduced current leakage and overlap ca...

Method to form a self-aligned CMOS inverter using vertical device i...

Method for forming variable-K gate dielectric

METHOD FOR FABRICATING A SELF ALIGNED S/D CMOS DEVICE ON INSULATED...

Method for forming variable-K gate dielectric

Method to form a vertical transistor by selective epitaxial growth...

Method to form very high mobility vertical channel transistor by se...