Yinghua Piao

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Shanghai, CN

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Patents Grantslast 30 patents

Information Patent Grant
Asymmetric source-drain field-effect transistor having a mixed scho...
- Patent number 8,969,160
- Issue date Mar 3, 2015
- Fudan University
- Yinghua Piao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Schottky junction source/drain transistor and method of making
- Patent number 8,697,529
- Issue date Apr 15, 2014
- Fudan University
- Dongping Wu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD FOR MAKING FIELD EFFECT TRANSISTOR
- Publication number 20130295732
- Publication date Nov 7, 2013
- Fudan University
- Dongping Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MAKING TRANSISTORS
- Publication number 20130270615
- Publication date Oct 17, 2013
- Fudan University
- Dongping Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Field-Effect Transistor and Method of Making
- Publication number 20130140625
- Publication date Jun 6, 2013
- Fudan University
- Yinghua Piao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Asymmetric Source-Drain Field Effect Transistor and Method of Making
- Publication number 20130032881
- Publication date Feb 7, 2013
- Fudan University
- Yinghua Piao
- H01 - BASIC ELECTRIC ELEMENTS