Yinxiao Yang

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Beacon, NY, US

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Patents Grantslast 30 patents

Information Patent Grant
Integrated circuit structure including laterally recessed source/dr...
- Patent number 10,396,078
- Issue date Aug 27, 2019
- GLOBALFOUNDRIES Inc.
- Judson R. Holt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit structure including laterally recessed source/dr...
- Patent number 10,020,307
- Issue date Jul 10, 2018
- GLOBALFOUNDRIES Inc.
- Judson R. Holt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Conformal buffer layer in source and drain regions of fin-type tran...
- Patent number 9,634,084
- Issue date Apr 25, 2017
- GLOBALFOUNDRIES Inc.
- Christopher D. Sheraw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial growth of material on source/drain regions of FinFET stru...
- Patent number 9,536,985
- Issue date Jan 3, 2017
- GLOBALFOUNDRIES Inc.
- Michael P. Chudzik
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
DEFECT FREE SILICON GERMANIUM (SiGe) EPITAXY GROWTH IN A LOW-K SPAC...
- Publication number 20190326112
- Publication date Oct 24, 2019
- GLOBALFOUNDRIES INC.
- Shahab SIDDIQUI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT STRUCTURE INCLUDING LATERALLY RECESSED SOURCE/DR...
- Publication number 20180286863
- Publication date Oct 4, 2018
- GLOBALFOUNDRIES INC.
- Judson R. Holt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL GROWTH OF MATERIAL ON SOURCE/DRAIN REGIONS OF FINFET STRU...
- Publication number 20160093720
- Publication date Mar 31, 2016
- International Business Machines Corporation
- Michael P. Chudzik
- H01 - BASIC ELECTRIC ELEMENTS