Yoichi Sasai

Person

Hirakata, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Method for providing a contact hole formed in an insulating film
- Patent number 6,498,094
- Issue date Dec 24, 2002
- Matsushita Electric Industrial Co., Ltd.
- Keisaku Nakao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Growth of GaN on Si substrate using GaSe buffer layer
- Patent number 6,323,053
- Issue date Nov 27, 2001
- Matsushita Electric Industrial Co., Ltd.
- Takashi Nishikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light-emitting diode device
- Patent number 6,169,296
- Issue date Jan 2, 2001
- Matsushita Electric Industrial Co., Ltd.
- Satoshi Kamiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low barrier ohmic contact for semiconductor light emitting device
- Patent number 6,087,725
- Issue date Jul 11, 2000
- Matsushita Electric Industrial Co., Ltd.
- Shigeo Yoshii
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor light emitting device and method for fabricating the...
- Patent number 5,822,347
- Issue date Oct 13, 1998
- Matsushita Electric Industrial Co., Ltd.
- Toshiya Yokogawa
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor light-emitting device and production method thereof,...
- Patent number 5,705,831
- Issue date Jan 6, 1998
- Matsushita Electric Industrial Co., Ltd.
- Nobuyuki Uemura
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor laser
- Patent number 5,619,520
- Issue date Apr 8, 1997
- Matsushita Electric Industrial Co., Ltd.
- Yoichi Sasai
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor device
- Patent number 4,961,198
- Issue date Oct 2, 1990
- Matsushita Electric Industrial Co., Ltd.
- Masato Ishino
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Optoelectronic integrated circuit
- Patent number 4,956,682
- Issue date Sep 11, 1990
- Matsushita Electric Industrial Co., Ltd.
- Kiyoshi Ohnaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor light emitting device
- Patent number 4,779,283
- Issue date Oct 18, 1988
- Matsushita Electric Industrial Co., Ltd.
- Kiyoshi Ohnaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Liquid phase epitaxial growth method
- Patent number 4,702,781
- Issue date Oct 27, 1987
- Matsushita Electric Industrial Co., Ltd.
- Yoichi Sasai
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR PROVIDING A CONTACT HOLE FORMED...
- Publication number 20010023129
- Publication date Sep 20, 2001
- KEISAKU NAKAO
- H01 - BASIC ELECTRIC ELEMENTS

Yoichi Sasai

Person

Patents Grantslast 30 patents

Method for providing a contact hole formed in an insulating film

Growth of GaN on Si substrate using GaSe buffer layer

Light-emitting diode device

Low barrier ohmic contact for semiconductor light emitting device

Semiconductor light emitting device and method for fabricating the...

Semiconductor light-emitting device and production method thereof,...

Semiconductor laser

Semiconductor device

Optoelectronic integrated circuit

Semiconductor light emitting device

Liquid phase epitaxial growth method

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE AND METHOD FOR PROVIDING A CONTACT HOLE FORMED...