Yoichiro Mitani

Person

Tokyo, JP

People

Patents Grantslast 30 patents

Information Patent Grant
SiC epitaxial wafer, semiconductor device, and power converter
- Patent number 11,233,126
- Issue date Jan 25, 2022
- Mitsubishi Electric Corporation
- Masashi Sakai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC epitaxial wafer and manufacturing method of the same
- Patent number 10,964,785
- Issue date Mar 30, 2021
- Mitsubishi Electric Corporation
- Yoichiro Mitani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC epitaxial wafer, method for manufacturing SiC epitaxial wafer,...
- Patent number 10,950,435
- Issue date Mar 16, 2021
- Mitsubishi Electric Corporation
- Kenichi Hamano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC epitaxial wafer, method for manufacturing SiC epitaxial wafer,...
- Patent number 10,910,218
- Issue date Feb 2, 2021
- Mitsubishi Electric Corporation
- Kenichi Hamano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide epitaxial substrate and silicon carbide semiconduct...
- Patent number 10,858,757
- Issue date Dec 8, 2020
- Mitsubishi Electric Corporation
- Takanori Tanaka
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor wafer, semiconductor device, and method for producing...
- Patent number 10,707,075
- Issue date Jul 7, 2020
- Mitsubishi Electric Corporation
- Kenichi Hamano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing SiC epitaxial wafer
- Patent number 9,988,738
- Issue date Jun 5, 2018
- Mitsubishi Electric Corporation
- Nobuyuki Tomita
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for manufacturing silicon carbide semiconductor device
- Patent number 9,957,638
- Issue date May 1, 2018
- Mitsubishi Electric Corporation
- Akihito Ohno
- C30 - CRYSTAL GROWTH
Information Patent Grant
Single-crystal 4H-SiC substrate
- Patent number 9,903,048
- Issue date Feb 27, 2018
- Mitsubishi Electric Corporation
- Akihito Ohno
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for manufacturing a single-crystal 4H—SiC substrate
- Patent number 9,752,254
- Issue date Sep 5, 2017
- Mitsubishi Electric Corporation
- Akihito Ohno
- C30 - CRYSTAL GROWTH
Information Patent Grant
Manufacturing method and apparatus for manufacturing silicon carbid...
- Patent number 9,564,315
- Issue date Feb 7, 2017
- Mitsubishi Electric Corporation
- Akihito Ohno
- B08 - CLEANING
Information Patent Grant
Single-crystal 4H-SiC substrate
- Patent number 9,422,640
- Issue date Aug 23, 2016
- Mitsubishi Electric Corporation
- Akihito Ohno
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method of manufacturing silicon carbide epitaxial wafer
- Patent number 8,679,952
- Issue date Mar 25, 2014
- Mitsubishi Electric Corporation
- Nobuyuki Tomita
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
SILICON CARBIDE EPITAXIAL WAFER, METHOD FOR MANUFACTURING SILICON C...
- Publication number 20200321437
- Publication date Oct 8, 2020
- Mitsubishi Electric Corporation
- Masashi SAKAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SiC EPITAXIAL WAFER, SEMICONDUCTOR DEVICE, AND POWER CONVERTER
- Publication number 20200279922
- Publication date Sep 3, 2020
- Mitsubishi Electric Corporation
- Masashi SAKAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR WAFER, SEMICONDUCTOR DEVICE, AND METHOD FOR PRODUCING...
- Publication number 20200144053
- Publication date May 7, 2020
- Mitsubishi Electric Corporation
- Kenichi HAMANO
- C30 - CRYSTAL GROWTH
Information Patent Application
SiC EPITAXIAL WAFER AND MANUFACTURING METHOD OF THE SAME
- Publication number 20200066847
- Publication date Feb 27, 2020
- Mitsubishi Electric Corporation
- Yoichiro MITANI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SIC EPITAXIAL WAFER, METHOD FOR MANUFACTURING SIC EPITAXIAL WAFER,...
- Publication number 20200020528
- Publication date Jan 16, 2020
- Mitsubishi Electric Corporation
- Kenichi HAMANO
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE EPITAXIAL SUBSTRATE AND SILICON CARBIDE SEMICONDUCT...
- Publication number 20190145021
- Publication date May 16, 2019
- MITSUBISHI ELECTRIC CORPORATION
- Takanori TANAKA
- C30 - CRYSTAL GROWTH
Information Patent Application
MANUFACTURING METHOD AND APPARATUS FOR MANUFACTURING SILICON CARBID...
- Publication number 20170040166
- Publication date Feb 9, 2017
- Mitsubishi Electric Corporation
- Akihito OHNO
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD FOR MANUFACTURING A SINGLE-CRYSTAL 4H-SiC SUBSTRATE
- Publication number 20160298262
- Publication date Oct 13, 2016
- Mitsubishi Electric Corporation
- Akihito Ohno
- C30 - CRYSTAL GROWTH
Information Patent Application
SINGLE-CRYSTAL 4H-SiC SUBSTRATE
- Publication number 20160298264
- Publication date Oct 13, 2016
- Mitsubishi Electric Corporation
- Akihito Ohno
- C30 - CRYSTAL GROWTH
Information Patent Application
SIC EPITAXIAL WAFER PRODUCTION METHOD
- Publication number 20150354090
- Publication date Dec 10, 2015
- MITSUBISHI ELECTRIC CORPORATION
- Nobuyuki TOMITA
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE
- Publication number 20150267320
- Publication date Sep 24, 2015
- Mitsubishi Electric Corporation
- Akihito OHNO
- C30 - CRYSTAL GROWTH
Information Patent Application
SINGLE-CRYSTAL 4H-SiC SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20140295136
- Publication date Oct 2, 2014
- Mitsubishi Electric Corporation
- Akihito Ohno
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE EPITAXIAL WAFER AND MANUFACTURING METHOD THEREFOR,...
- Publication number 20130126906
- Publication date May 23, 2013
- Mitsubishi Electric Corporation
- Nobuyuki Tomita
- C30 - CRYSTAL GROWTH

Yoichiro Mitani

Person

Patents Grantslast 30 patents

SiC epitaxial wafer, semiconductor device, and power converter

SiC epitaxial wafer and manufacturing method of the same

SiC epitaxial wafer, method for manufacturing SiC epitaxial wafer,...

SiC epitaxial wafer, method for manufacturing SiC epitaxial wafer,...

Silicon carbide epitaxial substrate and silicon carbide semiconduct...

Semiconductor wafer, semiconductor device, and method for producing...

Method for manufacturing SiC epitaxial wafer

Method for manufacturing silicon carbide semiconductor device

Single-crystal 4H-SiC substrate

Method for manufacturing a single-crystal 4H—SiC substrate

Manufacturing method and apparatus for manufacturing silicon carbid...

Single-crystal 4H-SiC substrate

Method of manufacturing silicon carbide epitaxial wafer

Patents Applicationslast 30 patents

SILICON CARBIDE EPITAXIAL WAFER, METHOD FOR MANUFACTURING SILICON C...

SiC EPITAXIAL WAFER, SEMICONDUCTOR DEVICE, AND POWER CONVERTER

SEMICONDUCTOR WAFER, SEMICONDUCTOR DEVICE, AND METHOD FOR PRODUCING...

SiC EPITAXIAL WAFER AND MANUFACTURING METHOD OF THE SAME

SIC EPITAXIAL WAFER, METHOD FOR MANUFACTURING SIC EPITAXIAL WAFER,...

SILICON CARBIDE EPITAXIAL SUBSTRATE AND SILICON CARBIDE SEMICONDUCT...

MANUFACTURING METHOD AND APPARATUS FOR MANUFACTURING SILICON CARBID...

METHOD FOR MANUFACTURING A SINGLE-CRYSTAL 4H-SiC SUBSTRATE

SINGLE-CRYSTAL 4H-SiC SUBSTRATE

SIC EPITAXIAL WAFER PRODUCTION METHOD

METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE

SINGLE-CRYSTAL 4H-SiC SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME

SILICON CARBIDE EPITAXIAL WAFER AND MANUFACTURING METHOD THEREFOR,...