Yong Mo Yang

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Clifton Park, NY, US

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Patents Grantslast 30 patents

Information Patent Grant
Methods of utilizing etch-stop material during fabrication of capac...
- Patent number 12,324,143
- Issue date Jun 3, 2025
- Micron Technology, Inc.
- Sanh D. Tang
Information Patent Grant
Apparatuses including Finfets having different gate oxide configura...
- Patent number 12,199,094
- Issue date Jan 14, 2025
- Micron Technology, Inc.
- Hyuck Soo Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated assemblies and semiconductor memory devices
- Patent number 11,594,536
- Issue date Feb 28, 2023
- Micron Technology, Inc.
- Yong Mo Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
IC product comprising an insulating gate separation structure posit...
- Patent number 11,522,068
- Issue date Dec 6, 2022
- GLOBALFOUNDRIES U.S. Inc.
- Jiehui Shu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods and structures for a gate cut
- Patent number 10,832,966
- Issue date Nov 10, 2020
- GLOBALFOUNDRIES Inc.
- Chang Seo Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming replacement gate structures on transistor devices
- Patent number 10,453,936
- Issue date Oct 22, 2019
- GLOBALFOUNDRIES Inc.
- Jiehui Shu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
FINFETS HAVING VARIOUS DIFFERENT THICKNESSES OF GATE OXIDES AND REL...
- Publication number 20230141716
- Publication date May 11, 2023
- Micron Technology, Inc.
- Hyuck Soo Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated Assemblies and Semiconductor Memory Devices
- Publication number 20220293598
- Publication date Sep 15, 2022
- Micron Technology, Inc.
- Yong Mo Yang
- G11 - INFORMATION STORAGE
Information Patent Application
Methods of Utilizing Etch-Stop Material During Fabrication of Capac...
- Publication number 20210327881
- Publication date Oct 21, 2021
- Micron Technology, Inc.
- Sanh D. Tang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IC PRODUCT COMPRISING AN INSULATING GATE SEPARATION STRUCTURE POSIT...
- Publication number 20190355832
- Publication date Nov 21, 2019
- GLOBALFOUNDRIES INC.
- Jiehui Shu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS AND STRUCTURES FOR A GATE CUT
- Publication number 20190259668
- Publication date Aug 22, 2019
- GLOBALFOUNDRIES INC.
- Chang Seo Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING REPLACEMENT GATE STRUCTURES ON TRANSISTOR DEVICES
- Publication number 20190131429
- Publication date May 2, 2019
- GLOBALFOUNDRIES INC.
- Jiehui Shu
- H01 - BASIC ELECTRIC ELEMENTS