Yong-Sun Sohn

Person

Ichon-shi, KR

People

Patents Grantslast 30 patents

Information Patent Grant
Partial implantation method for semiconductor manufacturing
- Patent number 7,939,418
- Issue date May 10, 2011
- Hynix Semiconductor Inc.
- Kyoung Bong Rouh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for implanting ions in semiconductor device
- Patent number 7,825,015
- Issue date Nov 2, 2010
- Hynix Semiconductor, Inc.
- Yong-Sun Sohn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Partial implantation method for semiconductor manufacturing
- Patent number 7,662,705
- Issue date Feb 16, 2010
- Hynix Semiconductor Inc.
- Kyoung Bong Rouh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming flowable dielectric layer in semiconductor device
- Patent number 7,026,256
- Issue date Apr 11, 2006
- Hynix Semiconductor Inc.
- Yong-Sun Sohn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing shallow trench isolation in semiconductor...
- Patent number 6,953,734
- Issue date Oct 11, 2005
- Hynix Semiconductor Inc.
- Jae-Eun Lim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming method of contact in semiconductor device and manufacturing...
- Patent number 6,949,467
- Issue date Sep 27, 2005
- Hynix Semiconductor Inc.
- Yong-Sun Sohn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
pMOS device having ultra shallow super-steep-retrograde epi-channel...
- Patent number 6,881,987
- Issue date Apr 19, 2005
- Hynix Semiconductor Inc.
- Yong-Sun Sohn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOS transistor and method for fabricating the same
- Patent number 6,879,006
- Issue date Apr 12, 2005
- Hynix Semiconductor Inc.
- Yong-Sun Sohn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating CMOS transistor
- Patent number 6,767,780
- Issue date Jul 27, 2004
- Hynix Semiconductor Inc.
- Yong-Sun Sohn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating semiconductor device with ultra-shallow supe...
- Patent number 6,753,230
- Issue date Jun 22, 2004
- Hynix Semiconductor Inc.
- Yong-Sun Sohn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming transistor of semiconductor device
- Patent number 6,667,200
- Issue date Dec 23, 2003
- Hynix Semiconductor Inc.
- Yong Sun Sohn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a silicide layer of semiconductor device
- Patent number 6,667,233
- Issue date Dec 23, 2003
- Hynix Semiconductor Inc.
- Chang Woo Ryoo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a semiconductor device having reduced contact...
- Patent number 6,583,052
- Issue date Jun 24, 2003
- Hynix Semiconductor Inc.
- Dong Suk Shin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming ultra-shallow junctions using laser annealing
- Patent number 6,475,888
- Issue date Nov 5, 2002
- Hynix Semiconductor Inc.
- Yong Sun Sohn
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
DUAL SCAN TYPE ION IMPLANT SYSTEM
- Publication number 20250062100
- Publication date Feb 20, 2025
- Ninebell Co., Ltd
- Moon Soo CHOI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Implanting Ions In Semiconductor Device
- Publication number 20110039403
- Publication date Feb 17, 2011
- Hynix Semiconductor Inc.
- Yong-Sun Sohn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PARTIAL IMPLANTATION METHOD FOR SEMICONDUCTOR MANUFACTURING
- Publication number 20100099244
- Publication date Apr 22, 2010
- Hynix Semiconductor Inc.
- Kyoung Bong Rouh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Partial implantation method for semiconductor manufacturing
- Publication number 20060211226
- Publication date Sep 21, 2006
- HYNIX SEMICONDUCTOR INC.
- Kyoung Bong Rouh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for implanting ions in semiconductor device
- Publication number 20050250299
- Publication date Nov 10, 2005
- Hynix Semiconductor Inc.
- Yong-Sun Sohn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for forming flowable dielectric layer in semiconductor device
- Publication number 20050020063
- Publication date Jan 27, 2005
- Yong-Sun Sohn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for manufacturing shallow trench isolation in semiconductor...
- Publication number 20050020027
- Publication date Jan 27, 2005
- Jae-Eun Lim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOS transistor and method for fabricating the same
- Publication number 20040180489
- Publication date Sep 16, 2004
- Hynix Semiconductor Inc.
- Yong-Sun Sohn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
pMOS device having ultra shallow super-steep-retrograde epi-channel...
- Publication number 20040126947
- Publication date Jul 1, 2004
- Hynix Semiconductor Inc.
- Yong-Sun Sohn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING SEMICONDUCTOR DEVICE WITH ULTRA-SHALLOW SUPE...
- Publication number 20040053457
- Publication date Mar 18, 2004
- Yong-Sun Sohn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOS transistor and method for fabricating the same
- Publication number 20030218219
- Publication date Nov 27, 2003
- Yong-Sun Sohn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for fabricating semiconductor device with ultra-shallow supe...
- Publication number 20030215991
- Publication date Nov 20, 2003
- Yong-Sun Sohn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING TRANSISTOR OF SEMICONDUCTOR DEVICE
- Publication number 20030215992
- Publication date Nov 20, 2003
- Yong Sun Sohn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING A SILICIDE LAYER OF SEMICONDUCTOR DEVICE
- Publication number 20030119309
- Publication date Jun 26, 2003
- Chang Woo Ryoo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of fabricating a semiconductor device having reduced contact...
- Publication number 20030045039
- Publication date Mar 6, 2003
- Dong Suk Shin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING ULTRA-SHALLOW JUNCTIONS USING LASER ANNEALING
- Publication number 20020160592
- Publication date Oct 31, 2002
- Yong Sun Sohn
- H01 - BASIC ELECTRIC ELEMENTS

Yong-Sun Sohn

Person

Patents Grantslast 30 patents

Partial implantation method for semiconductor manufacturing

Method for implanting ions in semiconductor device

Partial implantation method for semiconductor manufacturing

Method for forming flowable dielectric layer in semiconductor device

Method for manufacturing shallow trench isolation in semiconductor...

Forming method of contact in semiconductor device and manufacturing...

pMOS device having ultra shallow super-steep-retrograde epi-channel...

MOS transistor and method for fabricating the same

Method for fabricating CMOS transistor

Method for fabricating semiconductor device with ultra-shallow supe...

Method for forming transistor of semiconductor device

Method for forming a silicide layer of semiconductor device

Method of fabricating a semiconductor device having reduced contact...

Method for forming ultra-shallow junctions using laser annealing

Patents Applicationslast 30 patents

DUAL SCAN TYPE ION IMPLANT SYSTEM

Method for Implanting Ions In Semiconductor Device

PARTIAL IMPLANTATION METHOD FOR SEMICONDUCTOR MANUFACTURING

Partial implantation method for semiconductor manufacturing

Method for implanting ions in semiconductor device

Method for forming flowable dielectric layer in semiconductor device

Method for manufacturing shallow trench isolation in semiconductor...

MOS transistor and method for fabricating the same

pMOS device having ultra shallow super-steep-retrograde epi-channel...

METHOD FOR FABRICATING SEMICONDUCTOR DEVICE WITH ULTRA-SHALLOW SUPE...

MOS transistor and method for fabricating the same

Method for fabricating semiconductor device with ultra-shallow supe...

METHOD FOR FORMING TRANSISTOR OF SEMICONDUCTOR DEVICE

METHOD FOR FORMING A SILICIDE LAYER OF SEMICONDUCTOR DEVICE

Method of fabricating a semiconductor device having reduced contact...

METHOD FOR FORMING ULTRA-SHALLOW JUNCTIONS USING LASER ANNEALING